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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A DPAK-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 22.5A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,792 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 15A DPAK-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 10V
- Vgs (Max): +10V, -20V
- FET Feature: -
- Power Dissipation (Max): 41W (Tc)
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 7.5A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,976 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 5A 8SOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V
- Vgs (Max): +20V, -25V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,736 |
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Toshiba Semiconductor and Storage |
TRANS NPN 2A 100V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock4,368 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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Package: TO-226-3, TO-92-3 Long Body |
Stock7,408 |
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Toshiba Semiconductor and Storage |
TRANS PNP 120V 0.1A S-MINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock237,066 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP 50V 0.15A ES6
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 800MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: SOT-563, SOT-666 |
Stock2,176 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.1W ES6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: SOT-563, SOT-666 |
Stock2,800 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 20V 1.5A CST2C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: 200pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: CST2C
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock6,880 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 100MA SC74A
- Diode Configuration: 4 Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SC-74A, 5-Mini Mold
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Package: SC-74A, SOT-753 |
Stock5,808 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 500MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: LSTM
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Package: TO-220-3 Full Pack |
Stock7,392 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 0.75V 500MA 5DFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.75V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 55µA ~ 68µA
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XDFN Exposed Pad
- Supplier Device Package: 5-DFNB (1.2x1.2)
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Package: 4-XDFN Exposed Pad |
Stock36,630 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 3.4V 200MA 4-SDFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.4V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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Package: 4-XFDFN Exposed Pad |
Stock95,448 |
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Toshiba Semiconductor and Storage |
IC INVERTER 8-INPUT 20TSSOP
- Logic Type: Buffer, Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock4,784 |
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Toshiba Semiconductor and Storage |
IC BUS TRANSCEIVER 8BIT 20TSSOP
- Logic Type: Transceiver, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.65 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock5,280 |
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Toshiba Semiconductor and Storage |
IC OPAMP GP 900KHZ SMV-5
- Amplifier Type: General Purpose
- Number of Circuits: 1
- Output Type: -
- Slew Rate: 0.7 V/µs
- Gain Bandwidth Product: -
- -3db Bandwidth: -
- Current - Input Bias: 1pA
- Voltage - Input Offset: 2mV
- Current - Supply: 100µA
- Current - Output / Channel: 700µA
- Voltage - Supply, Single/Dual (±): 3.5 V ~ 7 V, ±0.9 V ~ 1.8 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock27,372 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5VWM 15VC VESM
- Type: Steering (Rail to Rail)
- Unidirectional Channels: 2
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 6V
- Voltage - Clamping (Max) @ Ipp: 15V (Typ)
- Current - Peak Pulse (10/1000µs): 1A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: Yes
- Applications: General Purpose
- Capacitance @ Frequency: 0.5pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: SOT-723 |
Stock4,428 |
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Toshiba Semiconductor and Storage |
PHOTORELAY SPST-NO 120MA 40V
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 14 Ohm
- Load Current: 120mA
- Voltage - Input: 1.27VDC
- Voltage - Load: 0 ~ 40 V
- Mounting Type: Surface Mount
- Termination Style: SMD (SMT) Tab
- Package / Case: 4-SMD (0.096", 2.45mm)
- Supplier Device Package: 4-VSON
- Relay Type: Relay
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Package: 4-SMD (0.096", 2.45mm) |
Stock29,136 |
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Toshiba Semiconductor and Storage |
PHOTOCOUPLER PHOTORELAY 6-DIP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 200 mOhm
- Load Current: 2A
- Voltage - Input: 1.33VDC
- Voltage - Load: 0 ~ 100 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
- Relay Type: Relay
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Package: 6-DIP (0.300", 7.62mm) |
Stock7,188 |
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Toshiba Semiconductor and Storage |
8-CHANNEL CONSTANT CURRENT LED D
- Type: Linear
- Topology: Shift Register
- Internal Switch(s): Yes
- Number of Outputs: 8
- Voltage - Supply (Min): 3V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 25V
- Current - Output / Channel: 40mA
- Frequency: -
- Dimming: -
- Applications: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-SSOP
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Package: 16-LSSOP (0.173", 4.40mm Width) |
Stock4,912 |
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Toshiba Semiconductor and Storage |
IC GATE NOR 4CH 2-INP 14SOIC
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 4mA, 4mA
- Logic Level - Low: 0.8V
- Logic Level - High: 2V
- Max Propagation Delay @ V, Max CL: 16ns @ 5.5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOIC
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock5,168 |
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Toshiba Semiconductor and Storage |
IC BUFFER NON-INVERT 5.5V USV
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock4,960 |
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Toshiba Semiconductor and Storage |
X34 DUAL-SUPPLY LEVEL SHIFT SPDT
- Type: Bus Switch
- Circuit: 2 x 1:2
- Independent Circuits: 1
- Current - Output High, Low: -
- Voltage Supply Source: Dual Supply
- Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 14-VFSOP (0.118", 3.00mm Width)
- Supplier Device Package: 14-VSSOP
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Package: 14-VFSOP (0.118", 3.00mm Width) |
Stock24,048 |
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Toshiba Semiconductor and Storage |
X34 LDO REGULATORS VOUT: 1.2V IO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.2V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.781V @ 420mA
- Current - Output: 420mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, CSPBGA
- Supplier Device Package: 4-WCSPE (0.65x0.65)
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Package: 4-XFBGA, CSPBGA |
Stock50,766 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A US2H
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 60 µA @ 40 V
- Capacitance @ Vr, F: 300pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: US2H
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock45,627 |
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Toshiba Semiconductor and Storage |
PNP + NPN BRT Q1BSR4.7KOHM Q1BER
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock9,000 |
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Toshiba Semiconductor and Storage |
IC BUFFER INVERT 3.6V 20TSSOPB
- Logic Type: Buffer, Inverting
- Number of Elements: 2
- Number of Bits per Element: 4
- Input Type: -
- Output Type: 3-State
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.65V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOPB
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Package: - |
Stock6,720 |
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Toshiba Semiconductor and Storage |
PNP + NPN BRT Q1BSR22KOHM Q1BER2
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: - |
Stock9,000 |
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