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Toshiba Semiconductor and Storage |
MOSFET N-CH
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-92MOD
- Package / Case: TO-226-3, TO-92-3 Long Body
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,752 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 90A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 157W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 45A, 10V
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,424 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 22A 8-SOP ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 11A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
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Package: 8-PowerVDFN |
Stock48,078 |
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Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 0.18A/0.1A US6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
- Power - Max: 200mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock7,968 |
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Toshiba Semiconductor and Storage |
TRANS NPN 1A 600V SC71
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 600V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 75mA, 600mA
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: MSTM
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Package: SC-71 |
Stock3,200 |
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Toshiba Semiconductor and Storage |
TRANS NPN 450V 8A TO220NIS
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 640mA, 3.2A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Package: TO-220-3 Full Pack |
Stock6,288 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.3W SMV
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock28,320 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 500MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: LSTM
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Package: TO-220-3 Full Pack |
Stock4,624 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 1.8V 150MA PWMINI
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 1.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 100mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 800µA ~ 5mA
- PSRR: 72dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI (SOT-89)
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Package: TO-243AA |
Stock66,660 |
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Toshiba Semiconductor and Storage |
IC MOTOR DVR BIPO STEP 48WQFN
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: 1 ~ 1/32
- Applications: General Purpose
- Current - Output: 2A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 47 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-WFQFN Exposed Pad
- Supplier Device Package: 48-WQFN (7x7)
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Package: 48-WFQFN Exposed Pad |
Stock48,000 |
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Toshiba Semiconductor and Storage |
IC MOTOR DRIVER PAR 20SSOP
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: PWM
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 1A
- Voltage - Supply: 2.7 V ~ 5.5 V
- Voltage - Load: 2.5 V ~ 13.5 V
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-SSOP
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Package: 20-LSSOP (0.173", 4.40mm Width) |
Stock7,536 |
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Toshiba Semiconductor and Storage |
IC EEPROM 1GBIT 25NS 48TSOP
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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Package: 48-TFSOP (0.724", 18.40mm Width) |
Stock15,396 |
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Toshiba Semiconductor and Storage |
IC LATCH OCT D-TYPE 3-ST 20-DIP
- Logic Type: D-Type Transparent Latch
- Circuit: 8:8
- Output Type: Tri-State
- Voltage - Supply: 2 V ~ 5.5 V
- Independent Circuits: 1
- Delay Time - Propagation: 5.8ns
- Current - Output High, Low: 75mA, 75mA
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: 20-DIP (0.300", 7.62mm)
- Supplier Device Package: 20-DIP
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Package: 20-DIP (0.300", 7.62mm) |
Stock4,336 |
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Toshiba Semiconductor and Storage |
IC GATE FSV
- Logic Type: Inverter
- Number of Circuits: 1
- Number of Inputs: 1
- Features: Schmitt Trigger
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.9 V ~ 1.65 V
- Logic Level - High: 2.2 V ~ 3.85 V
- Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: fSV
- Package / Case: SOT-953
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Package: SOT-953 |
Stock7,792 |
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Toshiba Semiconductor and Storage |
IC C0MP GP CMOS PUSH-PULL SMV
- Type: General Purpose
- Number of Elements: 1
- Output Type: Push-Pull
- Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
- Voltage - Input Offset (Max): 7mV @ 5V
- Current - Input Bias (Max): 1pA
- Current - Output (Typ): 25mA
- Current - Quiescent (Max): 220µA
- CMRR, PSRR (Typ): -
- Propagation Delay (Max): 140ns
- Hysteresis: -
- Operating Temperature: -40°C ~ 85°C
- Package / Case: SC-74A, SOT-753
- Mounting Type: Surface Mount
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock5,376 |
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Toshiba Semiconductor and Storage |
IC OP AMP GP CMOS ESV
- Amplifier Type: General Purpose
- Number of Circuits: 1
- Output Type: -
- Slew Rate: 0.15 V/µs
- Gain Bandwidth Product: -
- -3db Bandwidth: -
- Current - Input Bias: 0.1pA
- Voltage - Input Offset: 1.2mV
- Current - Supply: 63µA
- Current - Output / Channel: 1.5mA
- Voltage - Supply, Single/Dual (±): 1.5 V ~ 5.5 V, ±0.75 V ~ 2.75 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Package: SOT-553 |
Stock7,856 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5VWM 7VC FSC
- Type: Steering (Rail to Rail)
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 5.8V
- Voltage - Clamping (Max) @ Ipp: 7V (Typ)
- Current - Peak Pulse (10/1000µs): 1A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 9pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: fSC (SOD-923)
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Package: SOD-923 |
Stock8,964 |
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Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET 350V 6SOP
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 35 Ohm
- Load Current: 120mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 350 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SOP (0.173", 4.40mm)
- Supplier Device Package: 6-SOP (2.54mm)
- Relay Type: Relay
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Package: 6-SOP (0.173", 4.40mm) |
Stock600,000 |
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Toshiba Semiconductor and Storage |
IC FF D-TYPE SNGL 8BIT 20TSSOPB
- Function: Standard
- Type: D-Type
- Output Type: Tri-State, Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 150MHz
- Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 2 V ~ 3.6 V
- Current - Quiescent (Iq): 10µA
- Input Capacitance: 7pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
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Package: 20-TSSOP (0.173", 4.40mm Width) |
Stock3,072 |
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Toshiba Semiconductor and Storage |
X34 LDO REGULATORS VOUT: 3.0V IO
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.291V @ 420mA
- Current - Output: 420mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, CSPBGA
- Supplier Device Package: 4-WCSPE (0.65x0.65)
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Package: 4-XFBGA, CSPBGA |
Stock85,662 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: - |
Stock9,000 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: - |
Stock600 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 70A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 630mW (Ta), 75W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
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Package: - |
Stock112,338 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock24,000 |
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Toshiba Semiconductor and Storage |
NPN + PNP BRT Q1BSR=4.7KOHM Q1BE
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock270 |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A SMINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 200 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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Package: - |
Stock17,895 |
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Toshiba Semiconductor and Storage |
LDO REG IOUT: 300MA VIN: 6V VOUT
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.257V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 580 nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-UDFN Exposed Pad
- Supplier Device Package: 4-DFN (1x1)
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Package: - |
Stock25,263 |
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Toshiba Semiconductor and Storage |
IC MCU 32BIT 1MB FLASH 100LQFP
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit
- Speed: 200MHz
- Connectivity: EBI/EMI, FIFO, I2C, IrDA, SIO, SPI, UART/USART
- Peripherals: DMA, I2S, LVD, POR, PWM, WDT
- Number of I/O: 91
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 32K x 8
- RAM Size: 256K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
- Data Converters: A/D 24x12b SAR; D/A 2x8b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-LQFP (14x14)
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Package: - |
Request a Quote |
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