|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock120,000 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 390 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,992 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
|
Package: TO-3P-3, SC-65-3 |
Stock23,100 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 0.3mA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 630mW (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 40A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
|
Package: 8-PowerVDFN |
Stock4,176 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 3A 100V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.5mA, 1.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
|
Package: TO-220-3 Full Pack |
Stock3,680 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 800MA 120V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
- Power - Max: 900mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
|
Package: TO-226-3, TO-92-3 Long Body |
Stock5,888 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.1W ES6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: SOT-563, SOT-666 |
Stock3,392 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG BUCK ADJ 6A SYNC 8SOP-ADV
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.7V
- Voltage - Input (Max): 5.6V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 5.6V
- Current - Output: 6A
- Frequency - Switching: 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-SOP Advance (5x5)
|
Package: 8-PowerVDFN |
Stock5,568 |
|
|
|
Toshiba Semiconductor and Storage |
IC STEP MOTOR DRVR PWM 36WQFN
- Motor Type - Stepper: Bipolar
- Motor Type - AC, DC: -
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (4)
- Interface: PWM
- Technology: Power MOSFET
- Step Resolution: 1, 1/2, 1/4
- Applications: General Purpose
- Current - Output: 2A
- Voltage - Supply: 4.75 V ~ 5.25 V
- Voltage - Load: 10 V ~ 35 V
- Operating Temperature: -20°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 36-WFQFN Exposed Pad
- Supplier Device Package: 36-WQFN (6x6)
|
Package: 36-WFQFN Exposed Pad |
Stock35,562 |
|
|
|
Toshiba Semiconductor and Storage |
IC BUS SWITCH LOCAP USV
- Switch Circuit: SPST - NC
- Multiplexer/Demultiplexer Circuit: 1:1
- Number of Circuits: 1
- On-State Resistance (Max): 18 Ohm
- Channel-to-Channel Matching (ΔRon): -
- Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V
- Voltage - Supply, Dual (V±): -
- Switch Time (Ton, Toff) (Max): 6ns, 6ns
- -3db Bandwidth: -
- Charge Injection: -
- Channel Capacitance (CS(off), CD(off)): 3.5pF
- Current - Leakage (IS(off)) (Max): 1µA
- Crosstalk: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock816,000 |
|
|
|
Toshiba Semiconductor and Storage |
IC MCU 16BIT 256KB FLASH 100QFP
- Core Processor: 900/L1
- Core Size: 16-Bit
- Speed: 27MHz
- Connectivity: EBI/EMI, IrDA, UART/USART
- Peripherals: DMA
- Number of I/O: 81
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -20°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 100-BQFP
- Supplier Device Package: 100-QFP (14x20)
|
Package: 100-BQFP |
Stock2,064 |
|
|
|
Toshiba Semiconductor and Storage |
IC MCU 32BIT 512KB FLASH 193FBGA
- Core Processor: TX19A
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: EBI/EMI, I2C, UART/USART
- Peripherals: DMA, WDT
- Number of I/O: 143
- Program Memory Size: 512KB (512K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 24K x 8
- Voltage - Supply (Vcc/Vdd): 1.35 V ~ 3.6 V
- Data Converters: A/D 16x10b; D/A 2x8b
- Oscillator Type: External
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 193-FBGA
- Supplier Device Package: -
|
Package: 193-FBGA |
Stock19,680 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTO RELAY LOW TRIG CURR SO6
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 Ohm
- Load Current: 100mA
- Voltage - Input: 1.27VDC
- Voltage - Load: 0 ~ 60 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 6-SMD (4 Leads), Gull Wing
- Supplier Device Package: 6-SO, 4 Lead
- Relay Type: Relay
|
Package: 6-SMD (4 Leads), Gull Wing |
Stock241,596 |
|
|
|
Toshiba Semiconductor and Storage |
PHOTORELAY MOSFET 50MA 8-SOP
- Circuit: DPST (2 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 50 Ohm
- Load Current: 50mA
- Voltage - Input: 1.15VDC
- Voltage - Load: 0 ~ 200 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 8-SOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
- Relay Type: Relay
|
Package: 8-SOP (0.173", 4.40mm Width) |
Stock7,038 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISOLATOR 5KV TRIAC 6DIP 5L
- Output Type: Triac
- Zero Crossing Circuit: No
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Voltage - Off State: 600V
- Static dV/dt (Min): 500V/µs (Typ)
- Current - LED Trigger (Ift) (Max): 10mA
- Current - On State (It (RMS)) (Max): 100mA
- Current - Hold (Ih): 1mA (Typ)
- Turn On Time: -
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 50mA
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm), 5 Leads
- Supplier Device Package: 6-DIP (Cut), 5 Lead
- Approvals: BSI, SEMKO, UR
|
Package: 6-DIP (0.300", 7.62mm), 5 Leads |
Stock15,678 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISOLATOR 4KV SCR 6DIP
- Output Type: SCR
- Zero Crossing Circuit: No
- Number of Channels: 1
- Voltage - Isolation: 4000Vrms
- Voltage - Off State: 600V
- Static dV/dt (Min): 5V/µs
- Current - LED Trigger (Ift) (Max): 10mA
- Current - On State (It (RMS)) (Max): 150mA
- Current - Hold (Ih): 1mA
- Turn On Time: 15µs
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 50mA
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
- Approvals: BSI, SEMKO, UR, VDE
|
Package: 6-DIP (0.300", 7.62mm) |
Stock28,860 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
|
Package: 16-SOIC (0.179", 4.55mm Width) |
Stock7,974 |
|
|
|
Toshiba Semiconductor and Storage |
ISO AMP ANALOG OUTPUT GAIN SAFE
- Amplifier Type: Isolation
- Number of Circuits: 1
- Output Type: Differential
- Slew Rate: -
- Gain Bandwidth Product: -
- -3db Bandwidth: 230kHz
- Current - Input Bias: 5.5nA
- Voltage - Input Offset: 900µV
- Current - Supply: 12mA
- Current - Output / Channel: -
- Voltage - Supply, Single/Dual (±): 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.295", 7.50mm Width) |
Stock6,992 |
|
|
|
Toshiba Semiconductor and Storage |
AUTO AEC-Q TR PNPX2 BRT, Q1BSR=2
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: - |
Stock17,988 |
|
|
|
Toshiba Semiconductor and Storage |
L-MOS LVP IC VCC: 2.3V-3.6V, SOT
- Logic Type: XOR (Exclusive OR)
- Number of Circuits: 1
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2.3V ~ 3.6V
- Current - Quiescent (Max): 1 µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.35V ~ 0.5V
- Logic Level - High: 1.1V ~ 1.2V
- Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: fSV
- Package / Case: SOT-953
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
IC LED DRIVER LINEAR
- Type: Linear
- Topology: Shift Register
- Internal Switch(s): No
- Number of Outputs: 16
- Voltage - Supply (Min): 3V
- Voltage - Supply (Max): 5.5V
- Voltage - Output: 17V
- Current - Output / Channel: 90mA
- Frequency: -
- Dimming: No
- Applications: General Purpose
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-SOP (0.236", 6.00mm Width)
- Supplier Device Package: 24-SSOP
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: - |
Stock9,000 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.1W ES6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock12,000 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PNP 50V 5A PW-MOLD
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 270mV @ 53mA, 1.6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: - |
Stock150 |
|
|
|
Toshiba Semiconductor and Storage |
IC BUF NON-INVERT 3.6V 20TSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 1
- Number of Bits per Element: 8
- Input Type: -
- Output Type: 3-State
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.65V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A MFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 400 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: - |
Request a Quote |
|
|
|
Toshiba Semiconductor and Storage |
L-MOS LVP IC SOT-765(US8) VCC:2.
- Logic Type: XOR (Exclusive OR)
- Number of Circuits: 2
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2.3V ~ 3.6V
- Current - Quiescent (Max): 1 µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.35V ~ 0.5V
- Logic Level - High: 1.1V ~ 1.2V
- Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 15pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: US8
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
|
Package: - |
Stock18,000 |
|