Page 4 - Vishay Semiconductor Diodes Division Products - Transistors - IGBTs - Modules

VS-GB50LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 84A 431W SOT-227

Package: SOT-227-4, miniBLOC

Stock5,184
VS-GB100TP120U
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 735W INT-A-PAK

Package: INT-A-Pak

Stock4,992
VS-GB100DA60UP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

Package: SOT-227-4, miniBLOC

Stock7,840
VS-GA200SA60SP
Vishay Semiconductor Diodes Division

MODULE IGBT SOT-227

Package: SOT-227-4, miniBLOC

Stock3,504
VS-GA200HS60S1PBF
Vishay Semiconductor Diodes Division

IGBT 600V 480A 830W INT-A-PAK

Package: INT-A-Pak

Stock4,208
VS-GA100TS60SFPBF
Vishay Semiconductor Diodes Division

IGBT 600V 220A 780W INT-A-PAK

Package: INT-A-Pak

Stock5,824
VS-GA100TS120UPBF
Vishay Semiconductor Diodes Division

IGBT 1200V 182A 520W INT-A-PAK

Package: INT-A-Pak

Stock5,536
VS-GA100NA60UP
Vishay Semiconductor Diodes Division

IGBT 600V 100A 250W SOT-227

Package: SOT-227-4, miniBLOC

Stock6,112
VS-EMG050J60N
Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

Package: EMIPAK2

Stock3,776
VS-EMF050J60U
Vishay Semiconductor Diodes Division

IGBT 600V 88A 338W EMIPAK2

Package: EMIPAK2

Stock3,536
VS-CPV363M4KPBF
Vishay Semiconductor Diodes Division

MOD IGBT 3PHASE INV 600V SIP

Package: 19-SIP (13 Leads), IMS-2

Stock4,528
GB35XF120K
Vishay Semiconductor Diodes Division

MODULE IGBT 1200V 35A ECONO2 6PK

Package: ECONO2

Stock6,144
50MT060ULS
Vishay Semiconductor Diodes Division

IGBT UFAST 600V 100A MTP

Package: 10-MTP

Stock5,792
50MT060WH
Vishay Semiconductor Diodes Division

IGBT WARP 600V 114A MTP

Package: 12-MTP Module

Stock4,672
GA200SA60S
Vishay Semiconductor Diodes Division

IGBT STD 600V 100A SOT227

Package: SOT-227-4, miniBLOC

Stock4,832
GA200SA60U
Vishay Semiconductor Diodes Division

IGBT UFAST 600V 100A SOT227

Package: SOT-227-4, miniBLOC

Stock3,168
GA400TD25S
Vishay Semiconductor Diodes Division

IGBT FAST 250V 400A INT-A-PAK

Package: Dual INT-A-PAK (3 + 8)

Stock3,280
CPV364M4F
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 15A IMS-2

Package: 19-SIP (13 Leads), IMS-2

Stock7,408
CPV363M4F
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 9A IMS-2

Package: 19-SIP (13 Leads), IMS-2

Stock3,600
VS-GB300TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 530A 2119W INT-A-PAK

Package: Double INT-A-PAK (3 + 4)

Stock3,776

Part Number	Manufacturer	Description	Package	Stock	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
VS-GB50LA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 84A 431W SOT-227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 84A Power - Max: 431W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock5,184	Single	1200V	84A	431W	2.8V @ 15V, 50A	50µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GB100TP120U	Vishay Semiconductor Diodes Division	IGBT 1200V 150A 735W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Power - Max: 735W Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 4.3nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: - Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	Package: INT-A-Pak	Stock4,992	Half Bridge	1200V	150A	735W	3.9V @ 15V, 100A	2mA	4.3nF @ 25V	Standard	No	-	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GB100DA60UP	Vishay Semiconductor Diodes Division	MODULE IGBT SOT-227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 125A Power - Max: 447W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock7,840	Single	600V	125A	447W	2.8V @ 15V, 100A	100µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GA200SA60SP	Vishay Semiconductor Diodes Division	MODULE IGBT SOT-227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): - Power - Max: 781W Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.25nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock3,504	Single	600V	-	781W	1.3V @ 15V, 100A	1mA	16.25nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GA200HS60S1PBF	Vishay Semiconductor Diodes Division	IGBT 600V 480A 830W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 480A Power - Max: 830W Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 32.5nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	Package: INT-A-Pak	Stock4,208	Half Bridge	600V	480A	830W	1.21V @ 15V, 200A	1mA	32.5nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GA100TS60SFPBF	Vishay Semiconductor Diodes Division	IGBT 600V 220A 780W INT-A-PAK IGBT Type: PT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 220A Power - Max: 780W Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.25nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	Package: INT-A-Pak	Stock5,824	Half Bridge	600V	220A	780W	1.28V @ 15V, 100A	1mA	16.25nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GA100TS120UPBF	Vishay Semiconductor Diodes Division	IGBT 1200V 182A 520W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 182A Power - Max: 520W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 18.67nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: INT-A-Pak Supplier Device Package: INT-A-PAK	Package: INT-A-Pak	Stock5,536	Half Bridge	1200V	182A	520W	3V @ 15V, 100A	1mA	18.67nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	INT-A-Pak	INT-A-PAK
VS-GA100NA60UP	Vishay Semiconductor Diodes Division	IGBT 600V 100A 250W SOT-227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Power - Max: 250W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 7.4nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock6,112	Single	600V	100A	250W	2.1V @ 15V, 50A	250µA	7.4nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-EMG050J60N	Vishay Semiconductor Diodes Division	IGBT 600V 88A 338W EMIPAK2 IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 88A Power - Max: 338W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 9.5nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK2 Supplier Device Package: EMIPAK2	Package: EMIPAK2	Stock3,776	Half Bridge	600V	88A	338W	2.1V @ 15V, 50A	100µA	9.5nF @ 30V	Standard	Yes	150°C (TJ)	Chassis Mount	EMIPAK2	EMIPAK2
VS-EMF050J60U	Vishay Semiconductor Diodes Division	IGBT 600V 88A 338W EMIPAK2 IGBT Type: - Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 88A Power - Max: 338W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 9.5nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK2 Supplier Device Package: EMIPAK2	Package: EMIPAK2	Stock3,536	Three Level Inverter	600V	88A	338W	2.1V @ 15V, 50A	100µA	9.5nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	EMIPAK2	EMIPAK2
VS-CPV363M4KPBF	Vishay Semiconductor Diodes Division	MOD IGBT 3PHASE INV 600V SIP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Power - Max: 36W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.74nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock4,528	-	600V	11A	36W	2.1V @ 15V, 6A	250µA	0.74nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
GB35XF120K	Vishay Semiconductor Diodes Division	MODULE IGBT 1200V 35A ECONO2 6PK IGBT Type: NPT Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Power - Max: 284W Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 3.475nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ECONO2 Supplier Device Package: -	Package: ECONO2	Stock6,144	Three Phase Inverter	1200V	50A	284W	3V @ 15V, 50A	100µA	3.475nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	ECONO2	-
50MT060ULS	Vishay Semiconductor Diodes Division	IGBT UFAST 600V 100A MTP IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Power - Max: 445W Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 14.7nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 10-MTP Supplier Device Package: 10-MTP	Package: 10-MTP	Stock5,792	Single	600V	100A	445W	2.55V @ 15V, 100A	250µA	14.7nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	10-MTP	10-MTP
50MT060WH	Vishay Semiconductor Diodes Division	IGBT WARP 600V 114A MTP IGBT Type: PT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 114A Power - Max: 658W Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A Current - Collector Cutoff (Max): 400µA Input Capacitance (Cies) @ Vce: 7.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: 12-MTP	Package: 12-MTP Module	Stock4,672	Half Bridge	600V	114A	658W	3.2V @ 15V, 100A	400µA	7.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	12-MTP
GA200SA60S	Vishay Semiconductor Diodes Division	IGBT STD 600V 100A SOT227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Power - Max: 630W Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.25nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: SOT-227-4, miniBLOC	Stock4,832	Single	600V	200A	630W	1.3V @ 15V, 100A	1mA	16.25nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
GA200SA60U	Vishay Semiconductor Diodes Division	IGBT UFAST 600V 100A SOT227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.5nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227B	Package: SOT-227-4, miniBLOC	Stock3,168	Single	600V	200A	500W	1.9V @ 15V, 100A	1mA	16.5nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227B
GA400TD25S	Vishay Semiconductor Diodes Division	IGBT FAST 250V 400A INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 250V Current - Collector (Ic) (Max): 400A Power - Max: 1350W Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 400A Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: 36nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Dual INT-A-PAK (3 + 8) Supplier Device Package: Dual INT-A-PAK	Package: Dual INT-A-PAK (3 + 8)	Stock3,280	Half Bridge	250V	400A	1350W	1.6V @ 15V, 400A	500µA	36nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Dual INT-A-PAK (3 + 8)	Dual INT-A-PAK
CPV364M4F	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 15A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 27A Power - Max: 63W Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 27A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 2.2nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock7,408	Three Phase Inverter	600V	27A	63W	1.6V @ 15V, 27A	250µA	2.2nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
CPV363M4F	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 9A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Power - Max: 36W Vce(on) (Max) @ Vge, Ic: 1.63V @ 15V, 16A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock3,600	Three Phase Inverter	600V	16A	36W	1.63V @ 15V, 16A	250µA	1.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-GB300TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 530A 2119W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 530A Power - Max: 2119W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 25.3nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Package: Double INT-A-PAK (3 + 4)	Stock3,776	Half Bridge	1200V	530A	2119W	3.6V @ 15V, 300A	5mA	25.3nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB300TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 500A 1645W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 500A Power - Max: 1645W Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Package: Double INT-A-PAK (3 + 4)	Stock5,024	Half Bridge	1200V	500A	1645W	2.45V @ 15V, 300A	5mA	21.2nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GT300FD060N	Vishay Semiconductor Diodes Division	IGBT 600V 379A 1250W DIAP IGBT Type: Trench Field Stop Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 379A Power - Max: 1250W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 300A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 23.3nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Dual INT-A-PAK (4 + 8) Supplier Device Package: Dual INT-A-PAK	Package: Dual INT-A-PAK (4 + 8)	Stock4,224	Three Level Inverter	600V	379A	1250W	2.5V @ 15V, 300A	250µA	23.3nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	Dual INT-A-PAK (4 + 8)	Dual INT-A-PAK
VS-GB400AH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 650A 2500W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 650A Power - Max: 2500W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 30nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	Package: Double INT-A-PAK (5)	Stock7,744	Single	1200V	650A	2500W	1.9V @ 15V, 400A (Typ)	5mA	30nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (5)	Double INT-A-PAK
VS-GT400TH60N	Vishay Semiconductor Diodes Division	IGBT 600V 530A 1600W DIAP IGBT Type: Trench Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 530A Power - Max: 1600W Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 30.8nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 8) Supplier Device Package: Double INT-A-PAK	Package: Double INT-A-PAK (3 + 8)	Stock3,648	Half Bridge	600V	530A	1600W	2.05V @ 15V, 400A	5mA	30.8nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 8)	Double INT-A-PAK
VS-GB200TH120U	Vishay Semiconductor Diodes Division	IGBT 1200V 330A 1316W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 330A Power - Max: 1316W Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 16.9nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Package: Double INT-A-PAK (3 + 4)	Stock4,736	Half Bridge	1200V	330A	1316W	3.6V @ 15V, 200A	5mA	16.9nF @ 30V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB200TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 360A 1136W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 360A Power - Max: 1136W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 14.9nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Package: Double INT-A-PAK (3 + 4)	Stock2,720	Half Bridge	1200V	360A	1136W	2.35V @ 15V, 200A	5mA	14.9nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK
VS-GB300AH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 620A 2500W INT-A-PAK IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 620A Power - Max: 2500W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A (Typ) Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 21nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (5) Supplier Device Package: Double INT-A-PAK	Package: Double INT-A-PAK (5)	Stock6,576	Single	1200V	620A	2500W	1.9V @ 15V, 300A (Typ)	5mA	21nF @ 25V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	Double INT-A-PAK (5)	Double INT-A-PAK
VS-GB150TH120N	Vishay Semiconductor Diodes Division	IGBT 1200V 300A 1008W INT-A-PAK IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 300A Power - Max: 1008W Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 11nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Double INT-A-PAK (3 + 4) Supplier Device Package: Double INT-A-PAK	Package: Double INT-A-PAK (3 + 4)	Stock7,456	Half Bridge	1200V	300A	1008W	2.35V @ 15V, 150A	5mA	11nF @ 25V	Standard	No	150°C (TJ)	Chassis Mount	Double INT-A-PAK (3 + 4)	Double INT-A-PAK