Vishay Semiconductor Diodes Division Products - Transistors - IGBTs - Modules

VS-CPV362M4FPBF
Vishay Semiconductor Diodes Division

IGBT 600V 8.8A 23W IMS-2

Package: 19-SIP (13 Leads), IMS-2

Stock2,592
VS-GT105NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 105A HS CHOP SOT-227

Package: SOT-227-4, miniBLOC

Stock2,656
VS-GT105LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 105A LS CHOP SOT-227

Package: SOT-227-4, miniBLOC

Stock5,104
CPV362M4U
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 3.9A IMS-2

Package: 19-SIP (13 Leads), IMS-2

Stock7,648
CPV362M4K
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 31 IMS-2

Package: 19-SIP (13 Leads), IMS-2

Stock6,704
CPV362M4F
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 8.8A IMS-2

Package: 19-SIP (13 Leads), IMS-2

Stock3,888
VS-GB05XP120KTPBF
Vishay Semiconductor Diodes Division

MODULE MTP SWITCH

Package: 12-MTP Module

Stock2,848
CPV363M4U
Vishay Semiconductor Diodes Division

IGBT SIP MODULE 600V 6.8A IMS-2

Package: 19-SIP (13 Leads), IMS-2

Stock3,984
VS-GB55NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 55A HS CHOPPER SOT227

Package: SOT-227-4, miniBLOC

Stock5,376
VS-GB55LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 55A LS CHOPPER SOT227

Package: SOT-227-4, miniBLOC

Stock7,664
VS-GB75NA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 70A HS CHOPPER SOT-227

Package: SOT-227-4, miniBLOC

Stock2,128
VS-GB75LA60UF
Vishay Semiconductor Diodes Division

IGBT 600V 70A LS CHOPPER SOT-227

Package: SOT-227-4, miniBLOC

Stock6,576
VS-ETF150Y65N
Vishay Semiconductor Diodes Division

IGBT 650V 150A EMIPAK-2B

Package: Module

Stock5,136
VS-ENQ030L120S
Vishay Semiconductor Diodes Division

IGBT 1200V 61A 216W EMIPAK-1B

Package: EMIPAK-1B

Stock5,344
VS-ETF075Y60U
Vishay Semiconductor Diodes Division

IGBT 600V 109A 294W EMIPAK-2B

Package: EMIPAK-2B

Stock4,272
VS-ETF150Y65U
Vishay Semiconductor Diodes Division

IGBT 650V 150A EMIPAK-2B

Package: EMIPAK-2B

Stock4,816
VS-ETL015Y120H
Vishay Semiconductor Diodes Division

IGBT 1200V 22A 89W EMIPAK-2B

Package: EMIPAK-2B

Stock6,336
VS-GB90SA120U
Vishay Semiconductor Diodes Division

TRANSISTOR INSLTED GATE BIPOLAR

Package: SOT-227-4

Stock5,200
VS-50MT060WHTAPBF
Vishay Semiconductor Diodes Division

IGBT 600V 114A 658W MTP

Package: 12-MTP Module

Stock5,888
VS-GP250SA60S
Vishay Semiconductor Diodes Division

IGBT 600V 380A 893W SOT-227

Package: SOT-227-4, miniBLOC

Stock7,584

Part Number	Manufacturer	Description	Package	Stock	Configuration	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Power - Max	Vce(on) (Max) @ Vge, Ic	Current - Collector Cutoff (Max)	Input Capacitance (Cies) @ Vce	Input	NTC Thermistor	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
VS-CPV362M4FPBF	Vishay Semiconductor Diodes Division	IGBT 600V 8.8A 23W IMS-2 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 8.8A Power - Max: 23W Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 4.8A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.34nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock2,592	-	600V	8.8A	23W	1.7V @ 15V, 4.8A	250µA	0.34nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-GT105NA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 105A HS CHOP SOT-227 IGBT Type: Trench Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 134A Power - Max: 463W Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): 75µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock2,656	Single	1200V	134A	463W	-	75µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GT105LA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 105A LS CHOP SOT-227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 134A Power - Max: 463W Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): 75µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock5,104	Single	1200V	134A	463W	-	75µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
CPV362M4U	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 3.9A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 7.2A Power - Max: 23W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7.2A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.53nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock7,648	Three Phase Inverter	600V	7.2A	23W	1.95V @ 15V, 7.2A	250µA	0.53nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
CPV362M4K	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 31 IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 5.7A Power - Max: 23W Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 3A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.45nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock6,704	Three Phase Inverter	600V	5.7A	23W	1.93V @ 15V, 3A	250µA	0.45nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
CPV362M4F	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 8.8A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 8.8A Power - Max: 23W Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 8.8A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 0.34nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock3,888	Three Phase Inverter	600V	8.8A	23W	1.66V @ 15V, 8.8A	250µA	0.34nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-GB05XP120KTPBF	Vishay Semiconductor Diodes Division	MODULE MTP SWITCH IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 12A Power - Max: 76W Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	Package: 12-MTP Module	Stock2,848	Three Phase Inverter	1200V	12A	76W	-	250µA	-	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	MTP
CPV363M4U	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 6.8A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Power - Max: 36W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 13A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock3,984	Three Phase Inverter	600V	13A	36W	2V @ 15V, 13A	250µA	1.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-GB55NA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 55A HS CHOPPER SOT227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 84A Power - Max: 431W Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock5,376	Single	1200V	84A	431W	-	50µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GB55LA120UX	Vishay Semiconductor Diodes Division	IGBT 1200V 55A LS CHOPPER SOT227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 84A Power - Max: 431W Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock7,664	Single	1200V	84A	431W	-	50µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GB75NA60UF	Vishay Semiconductor Diodes Division	IGBT 600V 70A HS CHOPPER SOT-227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 109A Power - Max: 447W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock2,128	Single	600V	109A	447W	2V @ 15V, 35A	50µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GB75LA60UF	Vishay Semiconductor Diodes Division	IGBT 600V 70A LS CHOPPER SOT-227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 109A Power - Max: 447W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock6,576	Single	600V	109A	447W	2V @ 15V, 35A	50µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-ETF150Y65N	Vishay Semiconductor Diodes Division	IGBT 650V 150A EMIPAK-2B IGBT Type: NPT Configuration: Half Bridge Inverter Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 201A Power - Max: 600W Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 150A Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: Yes Operating Temperature: 175°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	Package: Module	Stock5,136	Half Bridge Inverter	650V	201A	600W	2.17V @ 15V, 150A	-	-	Standard	Yes	175°C (TJ)	-	Module	Module
VS-ENQ030L120S	Vishay Semiconductor Diodes Division	IGBT 1200V 61A 216W EMIPAK-1B IGBT Type: Trench Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 61A Power - Max: 216W Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 30A Current - Collector Cutoff (Max): 230µA Input Capacitance (Cies) @ Vce: 3.34nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK-1B Supplier Device Package: EMIPAK-1B	Package: EMIPAK-1B	Stock5,344	Three Level Inverter	1200V	61A	216W	2.52V @ 15V, 30A	230µA	3.34nF @ 30V	Standard	Yes	150°C (TJ)	Chassis Mount	EMIPAK-1B	EMIPAK-1B
VS-ETF075Y60U	Vishay Semiconductor Diodes Division	IGBT 600V 109A 294W EMIPAK-2B IGBT Type: Trench Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 109A Power - Max: 294W Vce(on) (Max) @ Vge, Ic: 1.93V @ 15V, 75A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 4.44nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK-2B Supplier Device Package: EMIPAK-2B	Package: EMIPAK-2B	Stock4,272	Three Level Inverter	600V	109A	294W	1.93V @ 15V, 75A	100µA	4.44nF @ 30V	Standard	Yes	175°C (TJ)	Chassis Mount	EMIPAK-2B	EMIPAK-2B
VS-ETF150Y65U	Vishay Semiconductor Diodes Division	IGBT 650V 150A EMIPAK-2B IGBT Type: Trench Configuration: Three Level Inverter Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 142A Power - Max: 417W Vce(on) (Max) @ Vge, Ic: 2.06V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 6.6nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: 175°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK-2B Supplier Device Package: EMIPAK-2B	Package: EMIPAK-2B	Stock4,816	Three Level Inverter	650V	142A	417W	2.06V @ 15V, 100A	100µA	6.6nF @ 30V	Standard	No	175°C (TJ)	Chassis Mount	EMIPAK-2B	EMIPAK-2B
VS-ETL015Y120H	Vishay Semiconductor Diodes Division	IGBT 1200V 22A 89W EMIPAK-2B IGBT Type: Trench Configuration: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 22A Power - Max: 89W Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A Current - Collector Cutoff (Max): 75µA Input Capacitance (Cies) @ Vce: 1.07nF @ 30V Input: Standard NTC Thermistor: Yes Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: EMIPAK-2B Supplier Device Package: EMIPAK-2B	Package: EMIPAK-2B	Stock6,336	-	1200V	22A	89W	3.03V @ 15V, 15A	75µA	1.07nF @ 30V	Standard	Yes	150°C (TJ)	Chassis Mount	EMIPAK-2B	EMIPAK-2B
VS-GB90SA120U	Vishay Semiconductor Diodes Division	TRANSISTOR INSLTED GATE BIPOLAR IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 149A Power - Max: 862W Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4 Supplier Device Package: SOT-227	Package: SOT-227-4	Stock5,200	Single	1200V	149A	862W	3.9V @ 15V, 75A	250µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4	SOT-227
VS-50MT060WHTAPBF	Vishay Semiconductor Diodes Division	IGBT 600V 114A 658W MTP IGBT Type: - Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 114A Power - Max: 658W Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A Current - Collector Cutoff (Max): 400µA Input Capacitance (Cies) @ Vce: 7.1nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	Package: 12-MTP Module	Stock5,888	Half Bridge	600V	114A	658W	3.2V @ 15V, 100A	400µA	7.1nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	MTP
VS-GP250SA60S	Vishay Semiconductor Diodes Division	IGBT 600V 380A 893W SOT-227 IGBT Type: PT, Trench Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 380A Power - Max: 893W Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock7,584	Single	600V	380A	893W	1.3V @ 15V, 100A	100µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GT175DA120U	Vishay Semiconductor Diodes Division	IGBT 1200V 288A 1087W SOT-227 IGBT Type: Trench Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 288A Power - Max: 1087W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock6,128	Single	1200V	288A	1087W	2.1V @ 15V, 100A	100µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-40MT120UHAPBF	Vishay Semiconductor Diodes Division	IGBT 1200V 80A 463W MTP IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Power - Max: 463W Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 8.28nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 12-MTP Module Supplier Device Package: MTP	Package: 12-MTP Module	Stock7,408	Half Bridge	1200V	80A	463W	4.91V @ 15V, 80A	250µA	8.28nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	12-MTP Module	MTP
VS-GB90DA120U	Vishay Semiconductor Diodes Division	IGBT 1200V 149A 862W SOT-227 IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 149A Power - Max: 862W Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 75A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock6,180	Single	1200V	149A	862W	3.8V @ 15V, 75A	250µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-CPV364M4KPBF	Vishay Semiconductor Diodes Division	IGBT SIP MODULE 600V 13A IMS-2 IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Power - Max: 63W Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 24A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1.6nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock6,480	Three Phase Inverter	600V	24A	63W	1.8V @ 15V, 24A	250µA	1.6nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-CPV364M4FPBF	Vishay Semiconductor Diodes Division	MOD IGBT 3PHASE INV 600V SIP IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 27A Power - Max: 63W Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 15A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 2.2nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 19-SIP (13 Leads), IMS-2 Supplier Device Package: IMS-2	Package: 19-SIP (13 Leads), IMS-2	Stock6,084	-	600V	27A	63W	1.5V @ 15V, 15A	250µA	2.2nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole	19-SIP (13 Leads), IMS-2	IMS-2
VS-GA200SA60UP	Vishay Semiconductor Diodes Division	IGBT 600V 200A 500W SOT-227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 200A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.5nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	Package: SOT-227-4, miniBLOC	Stock6,264	Single	600V	200A	500W	1.9V @ 15V, 100A	1mA	16.5nF @ 30V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
VS-GB90DA60U	Vishay Semiconductor Diodes Division	TRANSISTOR INSLTED GATE BIPOLAR IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 147A Power - Max: 625W Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: - Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4 Supplier Device Package: SOT-227	Package: SOT-227-4	Stock7,692	Single	600V	147A	625W	2.8V @ 15V, 100A	100µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4	SOT-227
VS-GA250SA60S	Vishay Semiconductor Diodes Division	IGBT 600V 400A SOT227 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 400A Power - Max: 961W Vce(on) (Max) @ Vge, Ic: 1.66V @ 15V, 200A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 16.25nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4 Supplier Device Package: SOT-227	Package: SOT-227-4	Stock6,336	Single	600V	400A	961W	1.66V @ 15V, 200A	1mA	16.25nF @ 30V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227-4	SOT-227