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Vishay Siliconix |
MOSFET 2N-CH 20V 4.5A SC-70
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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Package: PowerPAK? SC-70-6 Dual |
Stock7,024 |
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Logic Level Gate | 20V | 4.5A | 34 mOhm @ 4A, 4.5V | 1.3V @ 250µA | 17nC @ 10V | - | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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Vishay Siliconix |
MOSFET 2N/2P-CH 30V 14DIP
- FET Type: 2 N and 2 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
- Rds On (Max) @ Id, Vgs: 1 Ohm @ 1A, 12V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,352 |
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Standard | 30V | 850mA, 600mA | 1 Ohm @ 1A, 12V | 2.5V @ 1mA | - | 110pF @ 15V | 2W | -55°C ~ 150°C (TJ) | - | - | - |
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Vishay Siliconix |
MOSFET 4P-CH 30V 0.6A 14DIP
- FET Type: 4 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 600mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP
- Supplier Device Package: 14-DIP
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Package: 14-DIP |
Stock9,420 |
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Standard | 30V | 600mA | 2 Ohm @ 1A, 12V | 4.5V @ 1mA | - | 150pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP | 14-DIP |
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Vishay Siliconix |
MOSFET 4P-CH 30V 0.6A 14DIP
- FET Type: 4 P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 600mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock144,000 |
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Standard | 30V | 600mA | 2 Ohm @ 1A, 12V | 4.5V @ 1mA | - | 150pF @ 15V | 2W | -55°C ~ 150°C (TJ) | - | - | - |
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Vishay Siliconix |
MOSFET 4N-CH 90V 0.4A 14DIP
- FET Type: 4 N-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 90V
- Current - Continuous Drain (Id) @ 25°C: 400mA
- Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 14-DIP
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Package: - |
Stock4,192 |
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Logic Level Gate | 90V | 400mA | 4.5 Ohm @ 1A, 10V | 2.5V @ 1mA | - | 60pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Through Hole | - | 14-DIP |
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Vishay Siliconix |
MOSFET 4N-CH 90V 0.4A 14DIP
- FET Type: 4 N-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 90V
- Current - Continuous Drain (Id) @ 25°C: 400mA
- Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 14-DIP
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Package: - |
Stock7,616 |
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Logic Level Gate | 90V | 400mA | 4.5 Ohm @ 1A, 10V | 2.5V @ 1mA | - | 60pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Through Hole | - | 14-DIP |
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Vishay Siliconix |
MOSFET 4N-CH 90V 0.4A 14DIP
- FET Type: 4 N-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 90V
- Current - Continuous Drain (Id) @ 25°C: 400mA
- Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 14-DIP
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Package: - |
Stock6,168 |
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Logic Level Gate | 90V | 400mA | 4.5 Ohm @ 1A, 10V | 2.5V @ 1mA | - | 60pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Through Hole | - | 14-DIP |
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Vishay Siliconix |
MOSFET 4N-CH 30V 0.83A 14DIP
- FET Type: 4 N-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 830mA
- Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 14-DIP
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Package: - |
Stock2,672 |
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Logic Level Gate | 30V | 830mA | 1.75 Ohm @ 200mA, 5V | 2.5V @ 1mA | - | 110pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Through Hole | - | 14-DIP |
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Vishay Siliconix |
MOSFET 4N-CH 30V 0.83A 14DIP
- FET Type: 4 N-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 830mA
- Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 14-DIP
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Package: - |
Stock18,936 |
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Logic Level Gate | 30V | 830mA | 1.75 Ohm @ 200mA, 5V | 2.5V @ 1mA | - | 110pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Through Hole | - | 14-DIP |
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Vishay Siliconix |
MOSFET 4N-CH 30V 0.83A 14DIP
- FET Type: 4 N-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 830mA
- Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: 14-DIP
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Package: - |
Stock17,436 |
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Logic Level Gate | 30V | 830mA | 1.75 Ohm @ 200mA, 5V | 2.5V @ 1mA | - | 110pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Through Hole | - | 14-DIP |
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Vishay Siliconix |
MOSFET 2N-CH 60V 8A 8SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
- Power - Max: 25W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock32,892 |
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Logic Level Gate | 60V | 8A | 60 mOhm @ 4.3A, 10V | 2.5V @ 250µA | 14nC @ 10V | 475pF @ 25V | 25W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Vishay Siliconix |
MOSFET 2N-CH 40V 5.3A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 5.3A
- Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock105,588 |
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Logic Level Gate | 40V | 5.3A | 21 mOhm @ 7.4A, 10V | 3V @ 250µA | 32nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 30V 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock596,532 |
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Logic Level Gate | 30V | - | 25 mOhm @ 6.9A, 10V | 1V @ 250µA (Min) | 23nC @ 5V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 30V 5.3A 8-SOIC
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W, 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock147,948 |
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Logic Level Gate | 30V | 5.3A, 7.7A | 22 mOhm @ 6.3A, 10V | 2V @ 250µA | 12nC @ 5V | - | 1W, 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET N/P-CH 20V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock706,836 |
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Logic Level Gate | 20V | - | 25 mOhm @ 7.1A, 4.5V | 1.6V @ 250µA | 50nC @ 4.5V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET N/P-CH 30V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock662,292 |
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Logic Level Gate | 30V | - | 25 mOhm @ 6.9A, 10V | 1V @ 250µA (Min) | 50nC @ 10V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 30V 4.5A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock582,900 |
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Logic Level Gate | 30V | 4.5A | 35 mOhm @ 6A, 10V | 3V @ 250µA | 13nC @ 10V | - | 1.1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 30V 6A PPAK FET
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
- Power - Max: 10.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? ChipFET? Dual
- Supplier Device Package: PowerPAK? ChipFet Dual
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Package: PowerPAK? ChipFET? Dual |
Stock72,000 |
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Logic Level Gate | 30V | 6A | 31 mOhm @ 4.8A, 10V | 2.2V @ 250µA | 8.6nC @ 10V | 300pF @ 15V | 10.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFET? Dual | PowerPAK? ChipFet Dual |
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Vishay Siliconix |
MOSFET 2P-CH 30V 8A PPAK SO-8
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
- Power - Max: 55W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock7,296 |
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Logic Level Gate | 30V | 8A | 24 mOhm @ 9A, 10V | 2.5V @ 250µA | 55nC @ 10V | 1800pF @ 10V | 55W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Vishay Siliconix |
MOSFET 2N-CH 60V 3.7A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.7A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,401,312 |
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Logic Level Gate | 60V | 3.7A | 80 mOhm @ 3.7A, 10V | 3V @ 250µA | 20nC @ 10V | - | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 60V 4.5A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock389,544 |
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Logic Level Gate | 60V | 4.5A | 55 mOhm @ 4.5A, 10V | 3V @ 250µA | 30nC @ 10V | - | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |