Page 117 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

IRFD9010
Vishay Siliconix

MOSFET P-CH 50V 1.1A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock14,340
IRFD214
Vishay Siliconix

MOSFET N-CH 250V 450MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock53,700
IRFIBC20GPBF
Vishay Siliconix

MOSFET N-CH 600V 1.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock23,040
SI7302DN-T1-E3
Vishay Siliconix

MOSFET N-CH 220V 8.4A 1212-8

Package: PowerPAK? 1212-8

Stock8,508
SIHP12N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 12A TO220AB

Package: TO-220-3 Full Pack

Stock2,000
SI4390DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,408
SI4390DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 8.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,424,904
SI7788DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

Package: PowerPAK? SO-8

Stock59,856
IRF9620SPBF
Vishay Siliconix

MOSFET P-CH 200V 3.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,720
SI4451DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock14,448
SI4451DY-T1-E3
Vishay Siliconix

MOSFET P-CH 12V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock207,324
IRF9Z24STRRPBF
Vishay Siliconix

MOSFET P-CH 60V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock115,200
IRF9Z24STRLPBF
Vishay Siliconix

MOSFET P-CH 60V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,264
IRF9520STRRPBF
Vishay Siliconix

MOSFET P-CH 100V 6.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock28,800
IRF9520STRLPBF
Vishay Siliconix

MOSFET P-CH 100V 6.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,344
IRF634STRRPBF
Vishay Siliconix

MOSFET N-CH 250V 8.1A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,200
SQM47N10-24L_GE3
Vishay Siliconix

MOSFET N-CH 100V 47A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,960
SI4456DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 33A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,280
IRL620STRLPBF
Vishay Siliconix

MOSFET N-CH 200V 5.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock181,380
SIHF12N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 12A TO-220

Package: TO-220-3 Full Pack

Stock3,312

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFD9010	Vishay Siliconix	MOSFET P-CH 50V 1.1A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 580mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock14,340	MOSFET (Metal Oxide)	50V	1.1A (Tc)	10V	4V @ 250µA	11nC @ 10V	240pF @ 25V	±20V	-	1W (Tc)	500 mOhm @ 580mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD214	Vishay Siliconix	MOSFET N-CH 250V 450MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock53,700	MOSFET (Metal Oxide)	250V	450mA (Ta)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	1W (Ta)	2 Ohm @ 270mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFIBC20GPBF	Vishay Siliconix	MOSFET N-CH 600V 1.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock23,040	MOSFET (Metal Oxide)	600V	1.7A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	30W (Tc)	4.4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
SI7302DN-T1-E3	Vishay Siliconix	MOSFET N-CH 220V 8.4A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 220V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock8,508	MOSFET (Metal Oxide)	220V	8.4A (Tc)	4.5V, 10V	4V @ 250µA	21nC @ 10V	645pF @ 15V	±20V	-	3.8W (Ta), 52W (Tc)	320 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SIHP12N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 12A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,000	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	58nC @ 10V	937pF @ 100V	±30V	-	147W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3 Full Pack
SI4390DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 8.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,408	MOSFET (Metal Oxide)	30V	8.5A (Ta)	4.5V, 10V	2.8V @ 250µA	15nC @ 4.5V	-	±20V	-	1.4W (Ta)	9.5 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4390DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 8.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,424,904	MOSFET (Metal Oxide)	30V	8.5A (Ta)	4.5V, 10V	2.8V @ 250µA	15nC @ 4.5V	-	±20V	-	1.4W (Ta)	9.5 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI7788DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock59,856	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	125nC @ 10V	5370pF @ 15V	±20V	-	5.2W (Ta), 69W (Tc)	3.1 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRF9620SPBF	Vishay Siliconix	MOSFET P-CH 200V 3.5A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,720	MOSFET (Metal Oxide)	200V	3.5A (Tc)	10V	4V @ 250µA	22nC @ 10V	350pF @ 25V	±20V	-	3W (Ta), 40W (Tc)	1.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4451DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 850µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 8.25 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock14,448	MOSFET (Metal Oxide)	12V	10A (Ta)	1.8V, 4.5V	800mV @ 850µA	120nC @ 4.5V	-	±8V	-	1.5W (Ta)	8.25 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4451DY-T1-E3	Vishay Siliconix	MOSFET P-CH 12V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 850µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 8.25 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock207,324	MOSFET (Metal Oxide)	12V	10A (Ta)	1.8V, 4.5V	800mV @ 850µA	120nC @ 4.5V	-	±8V	-	1.5W (Ta)	8.25 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9Z24STRRPBF	Vishay Siliconix	MOSFET P-CH 60V 11A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock115,200	MOSFET (Metal Oxide)	60V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	570pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	280 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9Z24STRLPBF	Vishay Siliconix	MOSFET P-CH 60V 11A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,264	MOSFET (Metal Oxide)	60V	11A (Tc)	10V	4V @ 250µA	19nC @ 10V	570pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	280 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9520STRRPBF	Vishay Siliconix	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,800	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	600 mOhm @ 4.1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF9520STRLPBF	Vishay Siliconix	MOSFET P-CH 100V 6.8A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,344	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	600 mOhm @ 4.1A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF634STRRPBF	Vishay Siliconix	MOSFET N-CH 250V 8.1A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,200	MOSFET (Metal Oxide)	250V	8.1A (Tc)	10V	4V @ 250µA	41nC @ 10V	770pF @ 25V	±20V	-	3.1W (Ta), 74W (Tc)	450 mOhm @ 5.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SQM47N10-24L_GE3	Vishay Siliconix	MOSFET N-CH 100V 47A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,960	MOSFET (Metal Oxide)	100V	47A (Tc)	4.5V, 10V	2.5V @ 250µA	72nC @ 10V	3620pF @ 25V	±20V	-	136W (Tc)	24 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4456DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 33A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5670pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,280	MOSFET (Metal Oxide)	40V	33A (Tc)	4.5V, 10V	2.8V @ 250µA	122nC @ 10V	5670pF @ 20V	±20V	-	3.5W (Ta), 7.8W (Tc)	3.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRL620STRLPBF	Vishay Siliconix	MOSFET N-CH 200V 5.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock181,380	MOSFET (Metal Oxide)	200V	5.2A (Tc)	4V, 10V	2V @ 250µA	16nC @ 5V	360pF @ 25V	±10V	-	3.1W (Ta), 50W (Tc)	800 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHF12N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,312	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4V @ 250µA	70nC @ 10V	1224pF @ 100V	±30V	-	33W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SI7390DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 9A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock53,988	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	3V @ 250µA	15nC @ 4.5V	-	±20V	-	1.8W (Ta)	9.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI7390DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 9A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock138,936	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	3V @ 250µA	15nC @ 4.5V	-	±20V	-	1.8W (Ta)	9.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI4632DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 40A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11175pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,296	MOSFET (Metal Oxide)	25V	40A (Tc)	4.5V, 10V	2.6V @ 250µA	161nC @ 10V	11175pF @ 15V	±16V	-	3.5W (Ta), 7.8W (Tc)	2.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4423DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 10A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 600µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,008	MOSFET (Metal Oxide)	20V	10A (Ta)	1.8V, 4.5V	900mV @ 600µA	175nC @ 5V	-	±8V	-	1.5W (Ta)	7.5 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4413ADY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 10.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,648	MOSFET (Metal Oxide)	30V	10.5A (Ta)	4.5V, 10V	3V @ 250µA	95nC @ 5V	-	±20V	-	1.5W (Ta)	7.5 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4632DY-T1-E3	Vishay Siliconix	MOSFET N-CH 25V 40A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11175pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock60,000	MOSFET (Metal Oxide)	25V	40A (Tc)	4.5V, 10V	2.6V @ 250µA	161nC @ 10V	11175pF @ 15V	±16V	-	3.5W (Ta), 7.8W (Tc)	2.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SUD50P10-43L-GE3	Vishay Siliconix	MOSFET P-CH 100V 37.1A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	100V	37.1A (Tc)	4.5V, 10V	3V @ 250µA	160nC @ 10V	4600pF @ 50V	±20V	-	8.3W (Ta), 136W (Tc)	43 mOhm @ 9.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
SQM40N10-30_GE3	Vishay Siliconix	MOSFET N-CH 100V 40A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3345pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,112	MOSFET (Metal Oxide)	100V	40A (Tc)	6V, 10V	3.5V @ 250µA	62nC @ 10V	3345pF @ 25V	±20V	-	107W (Tc)	30 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB