Page 173 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SIR774DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V

Package: -

Stock6,672
SI4128BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V

Package: -

Stock15,336
SUP25P10-138-GE3
Vishay Siliconix

MOSFET P-CH 100V 16.3A TO220AB

Package: TO-220-3

Stock6,672
SUM50P10-42-E3
Vishay Siliconix

MOSFET P-CH 100V 36A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,176
SUM25P10-138-E3
Vishay Siliconix

MOSFET P-CH 100V 16.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,768
SUM120N04-1M7L-GE3
Vishay Siliconix

MOSFET N-CH 40V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,032
SUD50N03-12P-GE3
Vishay Siliconix

MOSFET N-CH 30V 16.8A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,328
SUD50N02-09P-GE3
Vishay Siliconix

MOSFET N-CH 20V 20A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,160
SUD45P04-16P-GE3
Vishay Siliconix

MOSFET P-CH 40V 36A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,224
SIR808DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 20A POWERPAK

Package: PowerPAK? SO-8

Stock72,000
SUD42N03-3M9P-GE3
Vishay Siliconix

MOSFET N-CH 30V 42A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock42,876
SIR330DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 35A PPAK SO-8

Package: PowerPAK? SO-8

Stock16,632
SUD06N10-225L-GE3
Vishay Siliconix

MOSFET N-CH 100V 6.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock449,076
VQ1004P-E3
Vishay Siliconix

MOSFET N-CH 60V 0.4A TO-205

Package: -

Stock7,936
VQ1004P-2
Vishay Siliconix

MOSFET N-CH 60V 0.4A TO-205

Package: -

Stock4,736
VQ1004P
Vishay Siliconix

MOSFET N-CH 60V 0.4A TO-205

Package: -

Stock19,572
VP1008B
Vishay Siliconix

MOSFET P-CH 100V .79A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock49,152
VP0808B-E3
Vishay Siliconix

MOSFET P-CH 80V 0.88A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock6,528
VP0808B-2
Vishay Siliconix

MOSFET P-CH 80V 0.88A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock3,552
VP0808B
Vishay Siliconix

MOSFET P-CH 80V 0.88A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock5,280

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIR774DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,672	-	-	-	4.5V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
SI4128BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock15,336	-	-	-	4.5V, 10V	-	-	-	±25V	-	-	-	-	-	-	-
SUP25P10-138-GE3	Vishay Siliconix	MOSFET P-CH 100V 16.3A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 73.5W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,672	MOSFET (Metal Oxide)	100V	16.3A (Tc)	6V, 10V	4V @ 250µA	60nC @ 10V	2100pF @ 50V	±20V	-	3.1W (Ta), 73.5W (Tc)	13.8 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SUM50P10-42-E3	Vishay Siliconix	MOSFET P-CH 100V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 18.8W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,176	MOSFET (Metal Oxide)	100V	36A (Tc)	4.5V, 10V	3V @ 250µA	160nC @ 10V	4600pF @ 50V	±20V	-	18.8W (Ta), 125W (Tc)	4.2 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM25P10-138-E3	Vishay Siliconix	MOSFET P-CH 100V 16.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,768	MOSFET (Metal Oxide)	100V	16.7A (Tc)	6V, 10V	4V @ 250µA	60nC @ 10V	2110pF @ 25V	±20V	-	3.75W (Ta), 88.2W (Tc)	13.8 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUM120N04-1M7L-GE3	Vishay Siliconix	MOSFET N-CH 40V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11685pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,032	MOSFET (Metal Oxide)	40V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	285nC @ 10V	11685pF @ 20V	±20V	-	375W (Tc)	17 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUD50N03-12P-GE3	Vishay Siliconix	MOSFET N-CH 30V 16.8A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,328	MOSFET (Metal Oxide)	30V	16.8A (Ta)	4.5V, 10V	3V @ 250µA	42nC @ 10V	1600pF @ 25V	±20V	-	39W (Tc)	17 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD50N02-09P-GE3	Vishay Siliconix	MOSFET N-CH 20V 20A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 39.5W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,160	MOSFET (Metal Oxide)	20V	20A (Ta)	4.5V, 10V	3V @ 250µA	16nC @ 10V	1300pF @ 10V	±20V	-	39.5W (Tc)	14 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
SUD45P04-16P-GE3	Vishay Siliconix	MOSFET P-CH 40V 36A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2765pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 14A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,224	MOSFET (Metal Oxide)	40V	36A (Tc)	4.5V, 10V	2.5V @ 250µA	100nC @ 10V	2765pF @ 20V	±20V	-	2.1W (Ta), 41.7W (Tc)	16.2 mOhm @ 14A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
SIR808DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 20A POWERPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 12.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29.8W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock72,000	MOSFET (Metal Oxide)	25V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	22.8nC @ 10V	815pF @ 12.5V	±20V	-	29.8W (Tc)	8.9 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SUD42N03-3M9P-GE3	Vishay Siliconix	MOSFET N-CH 30V 42A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock42,876	MOSFET (Metal Oxide)	30V	42A (Tc)	4.5V, 10V	2.5V @ 250µA	100nC @ 10V	3535pF @ 15V	±20V	-	2.5W (Ta), 73.5W (Tc)	3.9 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
SIR330DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.7W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock16,632	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	35nC @ 10V	1300pF @ 15V	±20V	-	5W (Ta), 27.7W (Tc)	5.6 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SUD06N10-225L-GE3	Vishay Siliconix	MOSFET N-CH 100V 6.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 16.7W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock449,076	MOSFET (Metal Oxide)	100V	6.5A (Tc)	4.5V, 10V	3V @ 250µA	4nC @ 5V	240pF @ 25V	±20V	-	1.25W (Ta), 16.7W (Tc)	200 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
VQ1004P-E3	Vishay Siliconix	MOSFET N-CH 60V 0.4A TO-205 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,936	-	-	-	5V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
VQ1004P-2	Vishay Siliconix	MOSFET N-CH 60V 0.4A TO-205 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,736	-	-	-	5V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
VQ1004P	Vishay Siliconix	MOSFET N-CH 60V 0.4A TO-205 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock19,572	-	-	-	5V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
VP1008B	Vishay Siliconix	MOSFET P-CH 100V .79A TO-205 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 790mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock49,152	MOSFET (Metal Oxide)	100V	790mA (Ta)	10V	4.5V @ 1mA	-	150pF @ 25V	±20V	-	6.25W (Ta)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
VP0808B-E3	Vishay Siliconix	MOSFET P-CH 80V 0.88A TO-205 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock6,528	MOSFET (Metal Oxide)	80V	880mA (Ta)	10V	4.5V @ 1mA	-	150pF @ 25V	±20V	-	6.25W (Ta)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
VP0808B-2	Vishay Siliconix	MOSFET P-CH 80V 0.88A TO-205 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock3,552	MOSFET (Metal Oxide)	80V	880mA (Ta)	10V	4.5V @ 1mA	-	150pF @ 25V	±20V	-	6.25W (Ta)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
VP0808B	Vishay Siliconix	MOSFET P-CH 80V 0.88A TO-205 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 880mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock5,280	MOSFET (Metal Oxide)	80V	880mA (Ta)	10V	4.5V @ 1mA	-	150pF @ 25V	±20V	-	6.25W (Ta)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
VP0300B-E3	Vishay Siliconix	MOSFET P-CH 30V 0.32A TO-205 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1A, 12V Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,240	MOSFET (Metal Oxide)	30V	320mA (Ta)	-	4.5V @ 1mA	-	150pF @ 15V	-	-	-	2.5 Ohm @ 1A, 12V	-	-	-	-
SUP53P06-20-GE3	Vishay Siliconix	MOSFET P-CH 60V 9.2A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,440	MOSFET (Metal Oxide)	60V	9.2A (Ta), 53A (Tc)	4.5V, 10V	3V @ 250µA	115nC @ 10V	3500pF @ 25V	±20V	-	3.1W (Ta), 104.2W (Tc)	19.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SUD50N03-06AP-T4E3	Vishay Siliconix	MOSFET N-CH 30V 90A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 10W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,624	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	2.4V @ 250µA	95nC @ 10V	3800pF @ 15V	±20V	-	10W (Ta), 83W (Tc)	5.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
SIS448DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock3,968	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.3V @ 250µA	38nC @ 10V	1575pF @ 15V	±20V	-	3.7W (Ta), 52W (Tc)	5.6 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SIS334DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 20A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock36,000	MOSFET (Metal Oxide)	30V	20A (Tc)	4.5V, 10V	2.4V @ 250µA	18nC @ 10V	640pF @ 15V	±20V	-	3.8W (Ta), 50W (Tc)	11.3 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SIS330DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock68,436	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	35nC @ 10V	1300pF @ 15V	±20V	-	3.7W (Ta), 52W (Tc)	5.6 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SIR814DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock6,896	MOSFET (Metal Oxide)	40V	60A (Tc)	4.5V, 10V	2.3V @ 250µA	86nC @ 10V	3800pF @ 20V	±20V	-	6.25W (Ta), 104W (Tc)	2.1 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR482DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1575pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.7W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock6,928	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.3V @ 250µA	38nC @ 10V	1575pF @ 15V	±20V	-	5W (Ta), 27.7W (Tc)	5.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8