Page 124 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

IRF634
Vishay Siliconix

MOSFET N-CH 250V 8.1A TO-220AB

Package: TO-220-3

Stock433,476
IRFP350
Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC

Package: TO-247-3

Stock6,960
IRF9540
Vishay Siliconix

MOSFET P-CH 100V 19A TO-220AB

Package: TO-220-3

Stock6,224
IRF520
Vishay Siliconix

MOSFET N-CH 100V 9.2A TO-220AB

Package: TO-220-3

Stock392,520
IRFZ20
Vishay Siliconix

MOSFET N-CH 50V 15A TO-220AB

Package: TO-220-3

Stock16,428
IRFD9210
Vishay Siliconix

MOSFET P-CH 200V 0.4A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock65,976
IRF9620
Vishay Siliconix

MOSFET P-CH 200V 3.5A TO-220AB

Package: TO-220-3

Stock507,936
IRF9530
Vishay Siliconix

MOSFET P-CH 100V 12A TO-220AB

Package: TO-220-3

Stock143,304
IRFD220
Vishay Siliconix

MOSFET N-CH 200V 800MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock1,214,796
IRF9610
Vishay Siliconix

MOSFET P-CH 200V 1.8A TO-220AB

Package: TO-220-3

Stock136,392
IRF9520
Vishay Siliconix

MOSFET P-CH 100V 6.8A TO-220AB

Package: TO-220-3

Stock489,552
IRFD120
Vishay Siliconix

MOSFET N-CH 100V 1.3A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock168,360
IRF9640
Vishay Siliconix

MOSFET P-CH 200V 11A TO-220AB

Package: TO-220-3

Stock5,664
IRF710
Vishay Siliconix

MOSFET N-CH 400V 2A TO-220AB

Package: TO-220-3

Stock19,380
IRF720
Vishay Siliconix

MOSFET N-CH 400V 3.3A TO-220AB

Package: TO-220-3

Stock392,388
IRF830
Vishay Siliconix

MOSFET N-CH 500V 4.5A TO-220AB

Package: TO-220-3

Stock60,156
IRF820
Vishay Siliconix

MOSFET N-CH 500V 2.5A TO-220AB

Package: TO-220-3

Stock286,812
IRF740
Vishay Siliconix

MOSFET N-CH 400V 10A TO-220AB

Package: TO-220-3

Stock24,960
IRF730
Vishay Siliconix

MOSFET N-CH 400V 5.5A TO-220AB

Package: TO-220-3

Stock18,048
IRF620
Vishay Siliconix

MOSFET N-CH 200V 5.2A TO-220AB

Package: TO-220-3

Stock1,138,680

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF634	Vishay Siliconix	MOSFET N-CH 250V 8.1A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock433,476	MOSFET (Metal Oxide)	250V	8.1A (Tc)	10V	4V @ 250µA	41nC @ 10V	770pF @ 25V	±20V	-	74W (Tc)	450 mOhm @ 5.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP350	Vishay Siliconix	MOSFET N-CH 400V 16A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,960	MOSFET (Metal Oxide)	400V	16A (Tc)	10V	4V @ 250µA	150nC @ 10V	2600pF @ 25V	±20V	-	190W (Tc)	300 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRF9540	Vishay Siliconix	MOSFET P-CH 100V 19A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,224	MOSFET (Metal Oxide)	100V	19A (Tc)	10V	4V @ 250µA	61nC @ 10V	1400pF @ 25V	±20V	-	150W (Tc)	200 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF520	Vishay Siliconix	MOSFET N-CH 100V 9.2A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock392,520	MOSFET (Metal Oxide)	100V	9.2A (Tc)	10V	4V @ 250µA	16nC @ 10V	360pF @ 25V	±20V	-	60W (Tc)	270 mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFZ20	Vishay Siliconix	MOSFET N-CH 50V 15A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock16,428	MOSFET (Metal Oxide)	50V	15A (Tc)	10V	4V @ 250µA	17nC @ 10V	850pF @ 25V	±20V	-	40W (Tc)	100 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD9210	Vishay Siliconix	MOSFET P-CH 200V 0.4A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 240mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock65,976	MOSFET (Metal Oxide)	200V	400mA (Ta)	10V	4V @ 250µA	8.9nC @ 10V	170pF @ 25V	±20V	-	1W (Ta)	3 Ohm @ 240mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRF9620	Vishay Siliconix	MOSFET P-CH 200V 3.5A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock507,936	MOSFET (Metal Oxide)	200V	3.5A (Tc)	10V	4V @ 250µA	22nC @ 10V	350pF @ 25V	±20V	-	40W (Tc)	1.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9530	Vishay Siliconix	MOSFET P-CH 100V 12A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock143,304	MOSFET (Metal Oxide)	100V	12A (Tc)	10V	4V @ 250µA	38nC @ 10V	860pF @ 25V	±20V	-	88W (Tc)	300 mOhm @ 7.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD220	Vishay Siliconix	MOSFET N-CH 200V 800MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 800 mOhm @ 480mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock1,214,796	MOSFET (Metal Oxide)	200V	800mA (Ta)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	1W (Ta)	800 mOhm @ 480mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRF9610	Vishay Siliconix	MOSFET P-CH 200V 1.8A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock136,392	MOSFET (Metal Oxide)	200V	1.8A (Tc)	10V	4V @ 250µA	11nC @ 10V	170pF @ 25V	±20V	-	20W (Tc)	3 Ohm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9520	Vishay Siliconix	MOSFET P-CH 100V 6.8A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock489,552	MOSFET (Metal Oxide)	100V	6.8A (Tc)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	60W (Tc)	600 mOhm @ 4.1A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD120	Vishay Siliconix	MOSFET N-CH 100V 1.3A 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 270 mOhm @ 780mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock168,360	MOSFET (Metal Oxide)	100V	1.3A (Ta)	10V	4V @ 250µA	16nC @ 10V	360pF @ 25V	±20V	-	1.3W (Ta)	270 mOhm @ 780mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRF9640	Vishay Siliconix	MOSFET P-CH 200V 11A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,664	MOSFET (Metal Oxide)	200V	11A (Tc)	10V	4V @ 250µA	44nC @ 10V	1200pF @ 25V	±20V	-	125W (Tc)	500 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF710	Vishay Siliconix	MOSFET N-CH 400V 2A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock19,380	MOSFET (Metal Oxide)	400V	2A (Tc)	10V	4V @ 250µA	17nC @ 10V	170pF @ 25V	±20V	-	36W (Tc)	3.6 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF720	Vishay Siliconix	MOSFET N-CH 400V 3.3A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock392,388	MOSFET (Metal Oxide)	400V	3.3A (Tc)	10V	4V @ 250µA	20nC @ 10V	410pF @ 25V	±20V	-	50W (Tc)	1.8 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF830	Vishay Siliconix	MOSFET N-CH 500V 4.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock60,156	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	±20V	-	74W (Tc)	1.5 Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF820	Vishay Siliconix	MOSFET N-CH 500V 2.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock286,812	MOSFET (Metal Oxide)	500V	2.5A (Tc)	10V	4V @ 250µA	24nC @ 10V	360pF @ 25V	±20V	-	50W (Tc)	3 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF740	Vishay Siliconix	MOSFET N-CH 400V 10A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock24,960	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	63nC @ 10V	1400pF @ 25V	±20V	-	125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF730	Vishay Siliconix	MOSFET N-CH 400V 5.5A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock18,048	MOSFET (Metal Oxide)	400V	5.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	700pF @ 25V	±20V	-	74W (Tc)	1 Ohm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF620	Vishay Siliconix	MOSFET N-CH 200V 5.2A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock1,138,680	MOSFET (Metal Oxide)	200V	5.2A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	50W (Tc)	800 mOhm @ 3.1A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF530	Vishay Siliconix	MOSFET N-CH 100V 14A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock72,108	MOSFET (Metal Oxide)	100V	14A (Tc)	10V	4V @ 250µA	26nC @ 10V	670pF @ 25V	±20V	-	88W (Tc)	160 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF610	Vishay Siliconix	MOSFET N-CH 200V 3.3A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock997,548	MOSFET (Metal Oxide)	200V	3.3A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	36W (Tc)	1.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9630	Vishay Siliconix	MOSFET P-CH 200V 6.5A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,360	MOSFET (Metal Oxide)	200V	6.5A (Tc)	10V	4V @ 250µA	29nC @ 10V	700pF @ 25V	±20V	-	74W (Tc)	800 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD9120	Vishay Siliconix	MOSFET P-CH 100V 1A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock31,368	MOSFET (Metal Oxide)	100V	1A (Ta)	10V	4V @ 250µA	18nC @ 10V	390pF @ 25V	±20V	-	1.3W (Ta)	600 mOhm @ 600mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD9110	Vishay Siliconix	MOSFET P-CH 100V 0.7A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 420mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock5,376	MOSFET (Metal Oxide)	100V	700mA (Ta)	10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	±20V	-	1.3W (Ta)	1.2 Ohm @ 420mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD210	Vishay Siliconix	MOSFET N-CH 200V 600MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 360mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock15,576	MOSFET (Metal Oxide)	200V	600mA (Ta)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	1W (Ta)	1.5 Ohm @ 360mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD9113	Vishay Siliconix	MOSFET P-CH 60V 600MA 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 15nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 300mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock13,380	MOSFET (Metal Oxide)	60V	600mA (Ta)	-	-	15nC @ 15V	250pF @ 25V	-	-	-	1.6 Ohm @ 300mA, 10V	-	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD110	Vishay Siliconix	MOSFET N-CH 100V 1A 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 540 mOhm @ 600mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock70,800	MOSFET (Metal Oxide)	100V	1A (Ta)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	1.3W (Ta)	540 mOhm @ 600mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)