Page 129 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

IRFI9Z34G
Vishay Siliconix

MOSFET P-CH 60V 12A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock640,644
IRFI9630G
Vishay Siliconix

MOSFET P-CH 200V 4.3A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock82,752
IRFI9620G
Vishay Siliconix

MOSFET P-CH 200V 3A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock114,720
IRFI9540G
Vishay Siliconix

MOSFET P-CH 100V 11A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock2,368
IRFI9530G
Vishay Siliconix

MOSFET P-CH 100V 7.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,240
IRFI840GLC
Vishay Siliconix

MOSFET N-CH 500V 4.5A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,296
IRFI744G
Vishay Siliconix

MOSFET N-CH 450V 4.9A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock56,472
IRFI730G
Vishay Siliconix

MOSFET N-CH 400V 3.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock259,536
IRFI720G
Vishay Siliconix

MOSFET N-CH 400V 2.6A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock153,732
IRFI644G
Vishay Siliconix

MOSFET N-CH 250V 7.9A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,824
IRFI640G
Vishay Siliconix

MOSFET N-CH 200V 9.8A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock15,444
IRFI634G
Vishay Siliconix

MOSFET N-CH 250V 5.6A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock85,476
IRFI630G
Vishay Siliconix

MOSFET N-CH 200V 5.9A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock8,148
IRFI624G
Vishay Siliconix

MOSFET N-CH 250V 3.4A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock11,988
IRFI620G
Vishay Siliconix

MOSFET N-CH 200V 4.1A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock26,820
IRFI614G
Vishay Siliconix

MOSFET N-CH 250V 2.1A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,400
IRFI540G
Vishay Siliconix

MOSFET N-CH 100V 17A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,560
IRFI530G
Vishay Siliconix

MOSFET N-CH 100V 9.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock72,528
IRFI510G
Vishay Siliconix

MOSFET N-CH 100V 4.5A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock4,080
IRFDC20
Vishay Siliconix

MOSFET N-CH 600V 320MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock2,288

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFI9Z34G	Vishay Siliconix	MOSFET P-CH 60V 12A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock640,644	MOSFET (Metal Oxide)	60V	12A (Tc)	10V	4V @ 250µA	34nC @ 10V	1100pF @ 25V	±20V	-	42W (Tc)	140 mOhm @ 7.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI9630G	Vishay Siliconix	MOSFET P-CH 200V 4.3A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock82,752	MOSFET (Metal Oxide)	200V	4.3A (Tc)	10V	4V @ 250µA	29nC @ 10V	700pF @ 25V	±20V	-	35W (Tc)	800 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI9620G	Vishay Siliconix	MOSFET P-CH 200V 3A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock114,720	MOSFET (Metal Oxide)	200V	3A (Tc)	10V	4V @ 250µA	15nC @ 10V	340pF @ 15V	±20V	-	30W (Tc)	1.5 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI9540G	Vishay Siliconix	MOSFET P-CH 100V 11A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock2,368	MOSFET (Metal Oxide)	100V	11A (Tc)	10V	4V @ 250µA	61nC @ 10V	1400pF @ 25V	±20V	-	48W (Tc)	200 mOhm @ 6.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI9530G	Vishay Siliconix	MOSFET P-CH 100V 7.7A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,240	MOSFET (Metal Oxide)	100V	7.7A (Tc)	10V	4V @ 250µA	38nC @ 10V	860pF @ 25V	±20V	-	42W (Tc)	300 mOhm @ 4.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI840GLC	Vishay Siliconix	MOSFET N-CH 500V 4.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,296	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	40W (Tc)	850 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI744G	Vishay Siliconix	MOSFET N-CH 450V 4.9A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock56,472	MOSFET (Metal Oxide)	450V	4.9A (Tc)	10V	4V @ 250µA	80nC @ 10V	1400pF @ 25V	±20V	-	40W (Tc)	630 mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI730G	Vishay Siliconix	MOSFET N-CH 400V 3.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock259,536	MOSFET (Metal Oxide)	400V	3.7A (Tc)	10V	4V @ 250µA	38nC @ 10V	700pF @ 25V	±20V	-	35W (Tc)	1 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI720G	Vishay Siliconix	MOSFET N-CH 400V 2.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock153,732	MOSFET (Metal Oxide)	400V	2.6A (Tc)	10V	4V @ 250µA	20nC @ 10V	410pF @ 25V	±20V	-	30W (Tc)	1.8 Ohm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI644G	Vishay Siliconix	MOSFET N-CH 250V 7.9A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,824	MOSFET (Metal Oxide)	250V	7.9A (Tc)	10V	4V @ 250µA	68nC @ 10V	1300pF @ 25V	±20V	-	40W (Tc)	280 mOhm @ 4.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI640G	Vishay Siliconix	MOSFET N-CH 200V 9.8A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 5.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock15,444	MOSFET (Metal Oxide)	200V	9.8A (Tc)	10V	4V @ 250µA	70nC @ 10V	1300pF @ 25V	±20V	-	40W (Tc)	180 mOhm @ 5.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI634G	Vishay Siliconix	MOSFET N-CH 250V 5.6A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock85,476	MOSFET (Metal Oxide)	250V	5.6A (Tc)	10V	4V @ 250µA	41nC @ 10V	770pF @ 25V	±20V	-	35W (Tc)	450 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI630G	Vishay Siliconix	MOSFET N-CH 200V 5.9A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock8,148	MOSFET (Metal Oxide)	200V	5.9A (Tc)	10V	4V @ 250µA	43nC @ 10V	800pF @ 25V	±20V	-	35W (Tc)	400 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI624G	Vishay Siliconix	MOSFET N-CH 250V 3.4A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock11,988	MOSFET (Metal Oxide)	250V	3.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	30W (Tc)	1.1 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI620G	Vishay Siliconix	MOSFET N-CH 200V 4.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock26,820	MOSFET (Metal Oxide)	200V	4.1A (Tc)	10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	±20V	-	30W (Tc)	800 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI614G	Vishay Siliconix	MOSFET N-CH 250V 2.1A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,400	MOSFET (Metal Oxide)	250V	2.1A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	23W (Tc)	2 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI540G	Vishay Siliconix	MOSFET N-CH 100V 17A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,560	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	72nC @ 10V	1700pF @ 25V	±20V	-	48W (Tc)	77 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI530G	Vishay Siliconix	MOSFET N-CH 100V 9.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock72,528	MOSFET (Metal Oxide)	100V	9.7A (Tc)	10V	4V @ 250µA	33nC @ 10V	670pF @ 25V	±20V	-	42W (Tc)	160 mOhm @ 5.8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI510G	Vishay Siliconix	MOSFET N-CH 100V 4.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,080	MOSFET (Metal Oxide)	100V	4.5A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	27W (Tc)	540 mOhm @ 2.7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFDC20	Vishay Siliconix	MOSFET N-CH 600V 320MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock2,288	MOSFET (Metal Oxide)	600V	320mA (Ta)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	1W (Ta)	4.4 Ohm @ 190mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD9024	Vishay Siliconix	MOSFET P-CH 60V 1.6A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 280 mOhm @ 960mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock13,128	MOSFET (Metal Oxide)	60V	1.6A (Ta)	10V	4V @ 250µA	19nC @ 10V	570pF @ 25V	±20V	-	1.3W (Ta)	280 mOhm @ 960mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD9020	Vishay Siliconix	MOSFET P-CH 60V 1.6A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 280 mOhm @ 960mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock12,924	MOSFET (Metal Oxide)	60V	1.6A (Ta)	10V	4V @ 1µA	19nC @ 10V	570pF @ 25V	±20V	-	1.3W (Ta)	280 mOhm @ 960mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD9014	Vishay Siliconix	MOSFET P-CH 60V 1.1A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 500 mOhm @ 660mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock4,480	MOSFET (Metal Oxide)	60V	1.1A (Ta)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	1.3W (Ta)	500 mOhm @ 660mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD420	Vishay Siliconix	MOSFET N-CH 500V 370MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 370mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 220mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock3,488	MOSFET (Metal Oxide)	500V	370mA (Ta)	10V	4V @ 250µA	24nC @ 10V	360pF @ 25V	±20V	-	1W (Ta)	3 Ohm @ 220mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD320	Vishay Siliconix	MOSFET N-CH 400V 490MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 490mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 210mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock187,020	MOSFET (Metal Oxide)	400V	490mA (Ta)	10V	4V @ 250µA	20nC @ 10V	410pF @ 25V	±20V	-	1W (Ta)	1.8 Ohm @ 210mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD310	Vishay Siliconix	MOSFET N-CH 400V 350MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 210mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock2,064	MOSFET (Metal Oxide)	400V	350mA (Ta)	10V	4V @ 250µA	17nC @ 10V	170pF @ 25V	±20V	-	1W (Ta)	3.6 Ohm @ 210mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD014	Vishay Siliconix	MOSFET N-CH 60V 1.7A 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock7,392	MOSFET (Metal Oxide)	60V	1.7A (Ta)	10V	4V @ 250µA	11nC @ 10V	310pF @ 25V	±20V	-	1.3W (Ta)	200 mOhm @ 1A, 10V	-55°C ~ 175°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD010	Vishay Siliconix	MOSFET N-CH 50V 1.7A 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock100,680	MOSFET (Metal Oxide)	50V	1.7A (Tc)	10V	4V @ 250µA	13nC @ 10V	250pF @ 25V	±20V	-	1W (Tc)	200 mOhm @ 860mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)