Page 143 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

IRL2203STRR
Vishay Siliconix

MOSFET N-CH 30V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock9,516
IRL2203STRL
Vishay Siliconix

MOSFET N-CH 30V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,344
IRFZ48STRR
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,496
IRFZ48STRL
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,880
IRFZ48S
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock91,572
IRFZ48L
Vishay Siliconix

MOSFET N-CH 60V 50A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,064
IRFZ44STRL
Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,008
IRFZ44L
Vishay Siliconix

MOSFET N-CH 60V 50A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,856
IRFZ34STRR
Vishay Siliconix

MOSFET N-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock10,716
IRFZ34STRL
Vishay Siliconix

MOSFET N-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock36,780
IRFZ34S
Vishay Siliconix

MOSFET N-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock8,448
IRFZ34L
Vishay Siliconix

MOSFET N-CH 60V 30A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,896
IRFZ24STRR
Vishay Siliconix

MOSFET N-CH 60V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock28,500
IRFZ24STRL
Vishay Siliconix

MOSFET N-CH 60V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock21,600
IRFZ24L
Vishay Siliconix

MOSFET N-CH 60V 17A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,560
IRFZ14STRR
Vishay Siliconix

MOSFET N-CH 60V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,976
IRFZ14STRL
Vishay Siliconix

MOSFET N-CH 60V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,224
IRFZ14L
Vishay Siliconix

MOSFET N-CH 60V 10A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,776
IRFZ10
Vishay Siliconix

MOSFET N-CH 60V 10A TO-220AB

Package: TO-220-3

Stock438,516
IRFU9010
Vishay Siliconix

MOSFET P-CH 50V 5.3A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock266,796

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL2203STRR	Vishay Siliconix	MOSFET N-CH 30V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock9,516	MOSFET (Metal Oxide)	30V	100A (Tc)	4V, 10V	2.5V @ 250µA	110nC @ 4.5V	3500pF @ 25V	±20V	-	3.8W (Ta), 130W (Tc)	7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL2203STRL	Vishay Siliconix	MOSFET N-CH 30V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,344	MOSFET (Metal Oxide)	30V	100A (Tc)	4V, 10V	2.5V @ 250µA	110nC @ 4.5V	3500pF @ 25V	±20V	-	3.8W (Ta), 130W (Tc)	7 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ48STRR	Vishay Siliconix	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,496	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	110nC @ 10V	2400pF @ 25V	±20V	-	3.7W (Ta), 190W (Tc)	18 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ48STRL	Vishay Siliconix	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,880	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	110nC @ 10V	2400pF @ 25V	±20V	-	3.7W (Ta), 190W (Tc)	18 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ48S	Vishay Siliconix	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock91,572	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	110nC @ 10V	2400pF @ 25V	±20V	-	3.7W (Ta), 190W (Tc)	18 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ48L	Vishay Siliconix	MOSFET N-CH 60V 50A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 190W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,064	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	110nC @ 10V	2400pF @ 25V	±20V	-	3.7W (Ta), 190W (Tc)	18 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ44STRL	Vishay Siliconix	MOSFET N-CH 60V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,008	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	67nC @ 10V	1900pF @ 25V	±20V	-	3.7W (Ta), 150W (Tc)	28 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ44L	Vishay Siliconix	MOSFET N-CH 60V 50A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,856	MOSFET (Metal Oxide)	60V	50A (Tc)	10V	4V @ 250µA	67nC @ 10V	1900pF @ 25V	±20V	-	3.7W (Ta), 150W (Tc)	28 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ34STRR	Vishay Siliconix	MOSFET N-CH 60V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock10,716	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	46nC @ 10V	1200pF @ 25V	±20V	-	3.7W (Ta), 88W (Tc)	50 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ34STRL	Vishay Siliconix	MOSFET N-CH 60V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock36,780	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	46nC @ 10V	1200pF @ 25V	±20V	-	3.7W (Ta), 88W (Tc)	50 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ34S	Vishay Siliconix	MOSFET N-CH 60V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock8,448	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	46nC @ 10V	1200pF @ 25V	±20V	-	3.7W (Ta), 88W (Tc)	50 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ34L	Vishay Siliconix	MOSFET N-CH 60V 30A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,896	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	46nC @ 10V	1200pF @ 25V	±20V	-	3.7W (Ta), 88W (Tc)	50 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ24STRR	Vishay Siliconix	MOSFET N-CH 60V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,500	MOSFET (Metal Oxide)	60V	17A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	100 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ24STRL	Vishay Siliconix	MOSFET N-CH 60V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock21,600	MOSFET (Metal Oxide)	60V	17A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	100 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ24L	Vishay Siliconix	MOSFET N-CH 60V 17A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,560	MOSFET (Metal Oxide)	60V	17A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	100 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ14STRR	Vishay Siliconix	MOSFET N-CH 60V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,976	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	±20V	-	3.7W (Ta), 43W (Tc)	200 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ14STRL	Vishay Siliconix	MOSFET N-CH 60V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,224	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	±20V	-	3.7W (Ta), 43W (Tc)	200 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ14L	Vishay Siliconix	MOSFET N-CH 60V 10A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,776	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	±20V	-	3.7W (Ta), 43W (Tc)	200 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFZ10	Vishay Siliconix	MOSFET N-CH 60V 10A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock438,516	MOSFET (Metal Oxide)	60V	10A (Tc)	10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	±20V	-	43W (Tc)	200 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFU9010	Vishay Siliconix	MOSFET P-CH 50V 5.3A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock266,796	MOSFET (Metal Oxide)	50V	5.3A (Tc)	10V	4V @ 250µA	9.1nC @ 10V	240pF @ 25V	±20V	-	25W (Tc)	500 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFU1N60A	Vishay Siliconix	MOSFET N-CH 600V 1.4A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 229pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock18,876	MOSFET (Metal Oxide)	600V	1.4A (Tc)	10V	4V @ 250µA	14nC @ 10V	229pF @ 25V	±30V	-	36W (Tc)	7 Ohm @ 840mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFU010	Vishay Siliconix	MOSFET N-CH 50V 8.2A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,976	MOSFET (Metal Oxide)	50V	8.2A (Tc)	10V	4V @ 250µA	10nC @ 10V	250pF @ 25V	±20V	-	25W (Tc)	200 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFSL9N60ATRR	Vishay Siliconix	MOSFET N-CH 600V 9.2A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,416	MOSFET (Metal Oxide)	600V	9.2A (Tc)	10V	4V @ 250µA	49nC @ 10V	1400pF @ 25V	±30V	-	170W (Tc)	750 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL9N60ATRL	Vishay Siliconix	MOSFET N-CH 600V 9.2A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,040	MOSFET (Metal Oxide)	600V	9.2A (Tc)	10V	4V @ 250µA	49nC @ 10V	1400pF @ 25V	±30V	-	170W (Tc)	750 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL31N20DTRR	Vishay Siliconix	MOSFET N-CH 200V 31A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,056	MOSFET (Metal Oxide)	200V	31A (Tc)	10V	5.5V @ 250µA	110nC @ 10V	2370pF @ 25V	±30V	-	3.1W (Ta), 200W (Tc)	82 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL31N20DTRL	Vishay Siliconix	MOSFET N-CH 200V 31A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 82 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,952	MOSFET (Metal Oxide)	200V	31A (Tc)	10V	5.5V @ 250µA	110nC @ 10V	2370pF @ 25V	±30V	-	3.1W (Ta), 200W (Tc)	82 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFS9N60ATRR	Vishay Siliconix	MOSFET N-CH 600V 9.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,472	MOSFET (Metal Oxide)	600V	9.2A (Tc)	10V	4V @ 250µA	49nC @ 10V	1400pF @ 25V	±30V	-	170W (Tc)	750 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFS9N60ATRL	Vishay Siliconix	MOSFET N-CH 600V 9.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,720	MOSFET (Metal Oxide)	600V	9.2A (Tc)	10V	4V @ 250µA	49nC @ 10V	1400pF @ 25V	±30V	-	170W (Tc)	750 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB