Page 148 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

IRFL9014PBF
Vishay Siliconix

MOSFET P-CH 60V 1.8A SOT223

Package: TO-261-4, TO-261AA

Stock6,060
IRFL214PBF
Vishay Siliconix

MOSFET N-CH 250V 790MA SOT223

Package: TO-261-4, TO-261AA

Stock5,824
IRFL110PBF
Vishay Siliconix

MOSFET N-CH 100V 1.5A SOT223

Package: TO-261-4, TO-261AA

Stock4,784
IRFL014PBF
Vishay Siliconix

MOSFET N-CH 60V 2.7A SOT223

Package: TO-261-4, TO-261AA

Stock48,000
IRF644NSTRLPBF
Vishay Siliconix

MOSFET N-CH 250V 14A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,760
IRLU120PBF
Vishay Siliconix

MOSFET N-CH 100V 7.7A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock46,596
IRFBA22N50APBF
Vishay Siliconix

MOSFET N-CH 500V 24A SUPER-220

Package: Super-220?

Stock5,360
IRFB17N60KPBF
Vishay Siliconix

MOSFET N-CH 600V 17A TO-220AB

Package: TO-220-3

Stock6,848
IRC630PBF
Vishay Siliconix

MOSFET N-CH 200V 9A TO-220-5

Package: TO-220-5

Stock15,984
IRFI734GPBF
Vishay Siliconix

MOSFET N-CH 450V 3.4A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock3,456
IRFI744GPBF
Vishay Siliconix

MOSFET N-CH 450V 4.9A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,776
IRC830PBF
Vishay Siliconix

MOSFET N-CH 500V 4.5A TO-220-5

Package: TO-220-5

Stock7,236
IRC730PBF
Vishay Siliconix

MOSFET N-CH 400V 5.5A TO-220-5

Package: TO-220-5

Stock11,484
IRF640LPBF
Vishay Siliconix

MOSFET N-CH 200V 18A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock53,376
IRC634PBF
Vishay Siliconix

MOSFET N-CH 250V 8.1A TO-220-5

Package: TO-220-5

Stock9,924
IRFBC20LPBF
Vishay Siliconix

MOSFET N-CH 600V 2.2A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,128
IRF734PBF
Vishay Siliconix

MOSFET N-CH 450V 4.9A TO-220AB

Package: TO-220-3

Stock21,900
IRFP460NPBF
Vishay Siliconix

MOSFET N-CH 500V 20A TO-247AC

Package: TO-247-3

Stock5,216
IRFP354PBF
Vishay Siliconix

MOSFET N-CH 450V 14A TO-247AC

Package: TO-247-3

Stock7,376
IRFD010PBF
Vishay Siliconix

MOSFET N-CH 50V 1.7A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock4,032

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFL9014PBF	Vishay Siliconix	MOSFET P-CH 60V 1.8A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,060	MOSFET (Metal Oxide)	60V	1.8A (Tc)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	500 mOhm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFL214PBF	Vishay Siliconix	MOSFET N-CH 250V 790MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 790mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,824	MOSFET (Metal Oxide)	250V	790mA (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	2 Ohm @ 470mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFL110PBF	Vishay Siliconix	MOSFET N-CH 100V 1.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,784	MOSFET (Metal Oxide)	100V	1.5A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	540 mOhm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFL014PBF	Vishay Siliconix	MOSFET N-CH 60V 2.7A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock48,000	MOSFET (Metal Oxide)	60V	2.7A (Tc)	10V	4V @ 250µA	11nC @ 10V	300pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	200 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRF644NSTRLPBF	Vishay Siliconix	MOSFET N-CH 250V 14A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,760	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	54nC @ 10V	1060pF @ 25V	±20V	-	150W (Tc)	240 mOhm @ 8.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLU120PBF	Vishay Siliconix	MOSFET N-CH 100V 7.7A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock46,596	MOSFET (Metal Oxide)	100V	7.7A (Tc)	4V, 5V	2V @ 250µA	12nC @ 5V	490pF @ 25V	±10V	-	2.5W (Ta), 42W (Tc)	270 mOhm @ 4.6A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFBA22N50APBF	Vishay Siliconix	MOSFET N-CH 500V 24A SUPER-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220? (TO-273AA) Package / Case: Super-220?	Package: Super-220?	Stock5,360	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	4V @ 250µA	115nC @ 10V	3400pF @ 25V	±30V	-	340W (Tc)	230 mOhm @ 13.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-220? (TO-273AA)	Super-220?
IRFB17N60KPBF	Vishay Siliconix	MOSFET N-CH 600V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,848	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	5V @ 250µA	99nC @ 10V	2700pF @ 25V	±30V	-	340W (Tc)	420 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRC630PBF	Vishay Siliconix	MOSFET N-CH 200V 9A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock15,984	MOSFET (Metal Oxide)	200V	9A (Tc)	10V	4V @ 250µA	43nC @ 10V	800pF @ 25V	±20V	Current Sensing	74W (Tc)	400 mOhm @ 5.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IRFI734GPBF	Vishay Siliconix	MOSFET N-CH 450V 3.4A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock3,456	MOSFET (Metal Oxide)	450V	3.4A (Tc)	10V	4V @ 250µA	45nC @ 10V	680pF @ 25V	±20V	-	35W (Tc)	1.2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFI744GPBF	Vishay Siliconix	MOSFET N-CH 450V 4.9A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 630 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,776	MOSFET (Metal Oxide)	450V	4.9A (Tc)	10V	4V @ 250µA	80nC @ 10V	1400pF @ 25V	±20V	-	40W (Tc)	630 mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRC830PBF	Vishay Siliconix	MOSFET N-CH 500V 4.5A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock7,236	MOSFET (Metal Oxide)	500V	4.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	610pF @ 25V	±20V	Current Sensing	74W (Tc)	1.5 Ohm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IRC730PBF	Vishay Siliconix	MOSFET N-CH 400V 5.5A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock11,484	MOSFET (Metal Oxide)	400V	5.5A (Tc)	10V	4V @ 250µA	38nC @ 10V	700pF @ 25V	±20V	Current Sensing	74W (Tc)	1 Ohm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IRF640LPBF	Vishay Siliconix	MOSFET N-CH 200V 18A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock53,376	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	70nC @ 10V	1300pF @ 25V	±20V	-	3.1W (Ta), 130W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRC634PBF	Vishay Siliconix	MOSFET N-CH 250V 8.1A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock9,924	MOSFET (Metal Oxide)	250V	8.1A (Tc)	10V	4V @ 250µA	41nC @ 10V	770pF @ 25V	±20V	Current Sensing	74W (Tc)	450 mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IRFBC20LPBF	Vishay Siliconix	MOSFET N-CH 600V 2.2A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,128	MOSFET (Metal Oxide)	600V	2.2A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	4.4 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF734PBF	Vishay Siliconix	MOSFET N-CH 450V 4.9A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock21,900	MOSFET (Metal Oxide)	450V	4.9A (Tc)	10V	4V @ 250µA	45nC @ 10V	680pF @ 25V	±20V	-	74W (Tc)	1.2 Ohm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP460NPBF	Vishay Siliconix	MOSFET N-CH 500V 20A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 240 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,216	MOSFET (Metal Oxide)	500V	20A (Tc)	10V	5V @ 250µA	124nC @ 10V	3540pF @ 25V	±30V	-	280W (Tc)	240 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFP354PBF	Vishay Siliconix	MOSFET N-CH 450V 14A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,376	MOSFET (Metal Oxide)	450V	14A (Tc)	10V	4V @ 250µA	160nC @ 10V	2700pF @ 25V	±20V	-	190W (Tc)	350 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFD010PBF	Vishay Siliconix	MOSFET N-CH 50V 1.7A 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 860mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock4,032	MOSFET (Metal Oxide)	50V	1.7A (Tc)	10V	4V @ 250µA	13nC @ 10V	250pF @ 25V	±20V	-	1W (Tc)	200 mOhm @ 860mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFU020PBF	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,768	MOSFET (Metal Oxide)	60V	14A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRFIB8N50KPBF	Vishay Siliconix	MOSFET N-CH 500V 6.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock7,280	MOSFET (Metal Oxide)	500V	6.7A (Tc)	10V	5V @ 250µA	89nC @ 10V	2160pF @ 25V	±30V	-	45W (Tc)	350 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFB16N50KPBF	Vishay Siliconix	MOSFET N-CH 500V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock78,000	MOSFET (Metal Oxide)	500V	17A (Tc)	10V	5V @ 250µA	89nC @ 10V	2210pF @ 25V	±30V	-	280W (Tc)	350 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRC640PBF	Vishay Siliconix	MOSFET N-CH 200V 18A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock116,400	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	4V @ 250µA	70nC @ 10V	1300pF @ 25V	±20V	Current Sensing	125W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IRC540PBF	Vishay Siliconix	MOSFET N-CH 100V 28A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock2,304	MOSFET (Metal Oxide)	100V	28A (Tc)	10V	4V @ 250µA	69nC @ 10V	1300pF @ 25V	±20V	Current Sensing	150W (Tc)	77 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-5	TO-220-5
IRC840PBF	Vishay Siliconix	MOSFET N-CH 500V 8A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock13,068	MOSFET (Metal Oxide)	500V	8A (Tc)	10V	4V @ 250µA	67nC @ 10V	1300pF @ 25V	±20V	Current Sensing	125W (Tc)	850 mOhm @ 4.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IRC644PBF	Vishay Siliconix	MOSFET N-CH 250V 14A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock7,840	MOSFET (Metal Oxide)	250V	14A (Tc)	10V	4V @ 250µA	65nC @ 10V	1200pF @ 25V	±20V	Current Sensing	125W (Tc)	280 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IRC740PBF	Vishay Siliconix	MOSFET N-CH 400V 10A TO-220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: Current Sensing Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-5 Package / Case: TO-220-5	Package: TO-220-5	Stock3,200	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	66nC @ 10V	1200pF @ 25V	±20V	Current Sensing	125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5