Page 172 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SIHW47N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 47A TO-247AD

Package: TO-247-3

Stock3,408
SIHW23N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 23A TO-247AD

Package: TO-247-3

Stock7,984
SIHB30N60E-E3
Vishay Siliconix

MOSFET N-CH 600V 29A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,464
SI4752DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 25A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,368
IRFPS40N60K
Vishay Siliconix

MOSFET N-CH 600V 40A SUPER247

Package: TO-274AA

Stock104,856
IRFPS38N60L
Vishay Siliconix

MOSFET N-CH 600V 38A SUPER247

Package: TO-274AA

Stock5,968
IRFP26N60L
Vishay Siliconix

MOSFET N-CH 600V 26A TO-247AC

Package: TO-247-3

Stock7,488
IRFP22N60K
Vishay Siliconix

MOSFET N-CH 600V 22A TO-247AC

Package: TO-247-3

Stock47,268
IRFP21N60L
Vishay Siliconix

MOSFET N-CH 600V 21A TO-247AC

Package: TO-247-3

Stock3,504
IRFD9123
Vishay Siliconix

MOSFET P-CH 100V 1A 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock9,708
IRFD213
Vishay Siliconix

MOSFET N-CH 250V 450MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock3,152
IRFD113
Vishay Siliconix

MOSFET N-CH 60V 800MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock4,400
3N164
Vishay Siliconix

MOSFET P-CH 30V 50MA TO-206AF

Package: TO-206AF, TO-72-4 Metal Can

Stock2,624
3N163-E3
Vishay Siliconix

MOSFET P-CH 40V 50MA TO-72

Package: TO-206AF, TO-72-4 Metal Can

Stock3,456
3N163-2
Vishay Siliconix

MOSFET P-CH 40V 50MA TO-72

Package: TO-206AF, TO-72-4 Metal Can

Stock7,552
3N163
Vishay Siliconix

MOSFET P-CH 40V 50MA TO-72

Package: TO-206AF, TO-72-4 Metal Can

Stock4,912
2N6661JTXV02
Vishay Siliconix

MOSFET N-CH 90V 0.86A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock7,632
2N6661JTXP02
Vishay Siliconix

MOSFET N-CH 90V 0.86A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock3,664
2N6661JTXL02
Vishay Siliconix

MOSFET N-CH 90V 0.86A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock4,928
2N6661JTX02
Vishay Siliconix

MOSFET N-CH 90V 0.86A TO-205

Package: TO-205AD, TO-39-3 Metal Can

Stock5,024

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIHW47N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 47A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5682pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 417W (Tc) Rds On (Max) @ Id, Vgs: 72 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock3,408	MOSFET (Metal Oxide)	650V	47A (Tc)	10V	4V @ 250µA	273nC @ 10V	5682pF @ 100V	±20V	-	417W (Tc)	72 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
SIHW23N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 23A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: TO-247-3	Stock7,984	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	4V @ 250µA	95nC @ 10V	2418pF @ 100V	±20V	-	227W (Tc)	158 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-247-3
SIHB30N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 29A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,464	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	4V @ 250µA	130nC @ 10V	2600pF @ 100V	±30V	-	250W (Tc)	125 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI4752DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 25A 8-SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3W (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,368	MOSFET (Metal Oxide)	30V	25A (Tc)	4.5V, 10V	2.2V @ 1mA	43nC @ 10V	1700pF @ 15V	±20V	Schottky Diode (Body)	3W (Ta), 6.25W (Tc)	5.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFPS40N60K	Vishay Siliconix	MOSFET N-CH 600V 40A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7970pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-274AA	Package: TO-274AA	Stock104,856	MOSFET (Metal Oxide)	600V	40A (Tc)	10V	5V @ 250µA	330nC @ 10V	7970pF @ 25V	±30V	-	570W (Tc)	130 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
IRFPS38N60L	Vishay Siliconix	MOSFET N-CH 600V 38A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7990pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-274AA	Package: TO-274AA	Stock5,968	MOSFET (Metal Oxide)	600V	38A (Tc)	10V	5V @ 250µA	320nC @ 10V	7990pF @ 25V	±30V	-	540W (Tc)	150 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
IRFP26N60L	Vishay Siliconix	MOSFET N-CH 600V 26A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 470W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,488	MOSFET (Metal Oxide)	600V	26A (Tc)	10V	5V @ 250µA	180nC @ 10V	5020pF @ 25V	±30V	-	470W (Tc)	250 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFP22N60K	Vishay Siliconix	MOSFET N-CH 600V 22A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3570pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock47,268	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	5V @ 250µA	150nC @ 10V	3570pF @ 25V	±30V	-	370W (Tc)	280 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFP21N60L	Vishay Siliconix	MOSFET N-CH 600V 21A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock3,504	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	150nC @ 10V	4000pF @ 25V	±30V	-	330W (Tc)	320 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFD9123	Vishay Siliconix	MOSFET P-CH 100V 1A 4-DIP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 600 mOhm @ 600mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: 4-HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock9,708	MOSFET (Metal Oxide)	100V	1A (Ta)	-	4V @ 250µA	18nC @ 10V	390pF @ 25V	-	-	-	600 mOhm @ 600mA, 10V	-	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRFD213	Vishay Siliconix	MOSFET N-CH 250V 450MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock3,152	MOSFET (Metal Oxide)	250V	450mA (Ta)	-	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	-	-	-	2 Ohm @ 270mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
IRFD113	Vishay Siliconix	MOSFET N-CH 60V 800MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock4,400	MOSFET (Metal Oxide)	60V	800mA (Tc)	10V	4V @ 250µA	7nC @ 10V	200pF @ 25V	±20V	-	1W (Tc)	800 mOhm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
3N164	Vishay Siliconix	MOSFET P-CH 30V 50MA TO-206AF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 375mW (Ta) Rds On (Max) @ Id, Vgs: 300 Ohm @ 100µA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	Package: TO-206AF, TO-72-4 Metal Can	Stock2,624	MOSFET (Metal Oxide)	30V	50mA (Ta)	20V	5V @ 10µA	-	3.5pF @ 15V	±30V	-	375mW (Ta)	300 Ohm @ 100µA, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
3N163-E3	Vishay Siliconix	MOSFET P-CH 40V 50MA TO-72 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 375mW (Ta) Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	Package: TO-206AF, TO-72-4 Metal Can	Stock3,456	MOSFET (Metal Oxide)	40V	50mA (Ta)	20V	5V @ 10µA	-	3.5pF @ 15V	±30V	-	375mW (Ta)	250 Ohm @ 100µA, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
3N163-2	Vishay Siliconix	MOSFET P-CH 40V 50MA TO-72 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 375mW (Ta) Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	Package: TO-206AF, TO-72-4 Metal Can	Stock7,552	MOSFET (Metal Oxide)	40V	50mA (Ta)	20V	5V @ 10µA	-	3.5pF @ 15V	±30V	-	375mW (Ta)	250 Ohm @ 100µA, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
3N163	Vishay Siliconix	MOSFET P-CH 40V 50MA TO-72 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 5V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 15V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 375mW (Ta) Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-72 Package / Case: TO-206AF, TO-72-4 Metal Can	Package: TO-206AF, TO-72-4 Metal Can	Stock4,912	MOSFET (Metal Oxide)	40V	50mA (Ta)	20V	5V @ 10µA	-	3.5pF @ 15V	±30V	-	375mW (Ta)	250 Ohm @ 100µA, 20V	-55°C ~ 150°C (TJ)	Through Hole	TO-72	TO-206AF, TO-72-4 Metal Can
2N6661JTXV02	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock7,632	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661JTXP02	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock3,664	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661JTXL02	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock4,928	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661JTX02	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock5,024	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661JTVP02	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock2,640	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661JAN02	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock6,048	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661-E3	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock7,456	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661-2	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock7,344	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6661	Vishay Siliconix	MOSFET N-CH 90V 0.86A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock16,020	MOSFET (Metal Oxide)	90V	860mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AD, TO-39-3 Metal Can
2N6660JTXV02	Vishay Siliconix	MOSFET N-CH 60V 0.99A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock3,472	MOSFET (Metal Oxide)	60V	990mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AD, TO-39-3 Metal Can
2N6660JTXP02	Vishay Siliconix	MOSFET N-CH 60V 0.99A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock4,080	MOSFET (Metal Oxide)	60V	990mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AD, TO-39-3 Metal Can
2N6660JTXL02	Vishay Siliconix	MOSFET N-CH 60V 0.99A TO-205 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AD, TO-39-3 Metal Can	Package: TO-205AD, TO-39-3 Metal Can	Stock7,488	MOSFET (Metal Oxide)	60V	990mA (Tc)	5V, 10V	2V @ 1mA	-	50pF @ 25V	±20V	-	725mW (Ta), 6.25W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AD, TO-39-3 Metal Can