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Vishay Siliconix |
N-CHANNEL 600V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock2,913 |
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MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4V @ 250µA | 78 nC @ 10 V | 1350 pF @ 100 V | ±30V | - | 180W (Tc) | 280mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 65A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 250 V | 65A (Tc) | 7.5V, 10V | 3.5V @ 250µA | 75 nC @ 10 V | 4050 pF @ 25 V | ±20V | - | 375W (Tc) | 30mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
N-CHANNEL 30-V (D-S) MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock7,095 |
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MOSFET (Metal Oxide) | 30 V | 5.5A (Ta), 6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13 nC @ 10 V | 424 pF @ 15 V | ±20V | - | 1.3W (Ta), 2.5W (Tc) | 28mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 4.6A 8SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Tc)
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock37,536 |
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MOSFET (Metal Oxide) | 60 V | 4.6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40 nC @ 10 V | 1140 pF @ 30 V | ±20V | - | 3.75W (Tc) | 85mOhm @ 3.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
N-CHANNEL 60 V (D-S) MOSFET POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 36.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 27.1W (Tc)
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
Stock17,955 |
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MOSFET (Metal Oxide) | 60 V | 12.6A (Ta), 36.2A (Tc) | 4.5V, 10V | 3V @ 250µA | 23 nC @ 10 V | 905 pF @ 30 V | ±20V | - | 3.3W (Ta), 27.1W (Tc) | 11.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
N-CHANNEL 40-V (D-S) 175C MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock18,000 |
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MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 80 nC @ 10 V | 5000 pF @ 25 V | ±20V | - | 68W (Tc) | 3.2mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 800V 7.5A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock63 |
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MOSFET (Metal Oxide) | 800 V | 7.5A (Tc) | 10V | 4V @ 250µA | 72 nC @ 10 V | 1388 pF @ 100 V | ±30V | - | 33W (Tc) | 235mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 30V 50A TO220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 155 nC @ 10 V | 5380 pF @ 25 V | ±20V | - | 150W (Tc) | 7mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 40V 19A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2406 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6W (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock15,468 |
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MOSFET (Metal Oxide) | 40 V | 19A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 51 nC @ 10 V | 2406 pF @ 20 V | ±20V | - | 6W (Tc) | 8mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
E SERIES POWER MOSFET POWERPAK 8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerSMD, Gull Wing
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 51A (Tc) | 10V | 5V @ 250µA | 63 nC @ 10 V | 2557 pF @ 100 V | ±30V | - | 500W (Tc) | 84mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerSMD, Gull Wing |
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Vishay Siliconix |
MOSFET N-CH 100V 7.6A/24.7A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 24.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
- Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
Stock2,265 |
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MOSFET (Metal Oxide) | 100 V | 7.6A (Ta), 24.7A (Tc) | - | 2.5V @ 250µA | 29 nC @ 10 V | 1330 pF @ 50 V | ±20V | - | 3.6W (Ta), 39W (Tc) | 25.5mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 71A/334A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 71A (Ta), 334A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9120 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 0.78mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 71A (Ta), 334A (Tc) | - | 2.2V @ 250µA | 195 nC @ 10 V | 9120 pF @ 15 V | +20V, -16V | - | 6.3W (Ta), 104W (Tc) | 0.78mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 60V 1.8A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
- Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: - |
Stock10,347 |
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MOSFET (Metal Oxide) | 60 V | 1.8A (Tc) | 10V | 4V @ 250µA | 12 nC @ 10 V | 270 pF @ 25 V | ±20V | - | 2W (Ta), 3.1W (Tc) | 500mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
N-CHANNEL 80 V (D-S) 175C MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 302A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7730 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
- Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
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Package: - |
Stock12,075 |
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MOSFET (Metal Oxide) | 80 V | 30A (Ta), 302A (Tc) | 7.5V, 10V | 4V @ 250µA | 155 nC @ 10 V | 7730 pF @ 40 V | ±20V | - | 3.3W (Ta), 333W (Tc) | 1.35mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | PowerPAK® 8 x 8 |
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Vishay Siliconix |
P-CHANNEL 12-V (D-S) MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Stock16,968 |
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MOSFET (Metal Oxide) | 12 V | 5A (Ta), 6A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 35 nC @ 8 V | 1275 pF @ 6 V | ±8V | - | 1.2W (Ta), 1.7W (Tc) | 28mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CHANNEL 40V 19A 8SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2406 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6W (Tc)
- Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock14,196 |
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MOSFET (Metal Oxide) | 40 V | 19A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 51 nC @ 10 V | 2406 pF @ 20 V | ±20V | - | 6W (Tc) | 8mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 600V 19A TO247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: - |
Stock987 |
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MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 5V @ 250µA | 33 nC @ 10 V | 1085 pF @ 100 V | ±30V | - | 156W (Tc) | 180mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 10.5A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8SH
- Package / Case: PowerPAK® 1212-8SH
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Package: - |
Stock18,000 |
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MOSFET (Metal Oxide) | 40 V | 10.5A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | - | ±20V | - | 1.5W (Ta) | 7.8mOhm @ 16.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
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Vishay Siliconix |
MOSFET N-CH 200V 9A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Stock3,000 |
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MOSFET (Metal Oxide) | 200 V | 9A (Tc) | - | 2V @ 250µA | 40 nC @ 10 V | 1100 pF @ 25 V | ±10V | - | 74W (Tc) | 400mOhm @ 5.4A, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 37A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Stock8,970 |
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MOSFET (Metal Oxide) | 100 V | 37A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 1390 pF @ 25 V | ±20V | - | 55W (Tc) | 19mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 600V 19A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock13,569 |
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MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 5V @ 250µA | 32 nC @ 10 V | 1118 pF @ 100 V | ±30V | - | 156W (Tc) | 201mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 41A TO247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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Package: - |
Stock1,425 |
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MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 5V @ 250µA | 77 nC @ 10 V | 2628 pF @ 100 V | ±30V | - | 250W (Tc) | 68mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
N-CHANNEL 100-V (D-S) 175C MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 37A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 1390 pF @ 25 V | ±20V | - | 55W (Tc) | 19mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
N-CHANNEL 30 V (D-S) MOSFET POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Ta), 198A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5030 pF @ 15 V
- Vgs (Max): +16V, -12V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
- Rds On (Max) @ Id, Vgs: 0.87mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-F
- Package / Case: PowerPAK® 1212-F
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Package: - |
Stock17,895 |
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MOSFET (Metal Oxide) | 30 V | 62A (Ta), 198A (Tc) | 4.5V, 10V | 2V @ 250µA | 36.2 nC @ 10 V | 5030 pF @ 15 V | +16V, -12V | - | 5.4W (Ta), 57W (Tc) | 0.87mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-F | PowerPAK® 1212-F |
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Vishay Siliconix |
E SERIES POWER MOSFET D2PAK (TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock3,120 |
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MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 4V @ 250µA | 22.5 nC @ 10 V | 422 pF @ 100 V | ±30V | - | 62.5W (Tc) | 950mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 100A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock5,703 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 3.5V @ 250µA | 90 nC @ 10 V | 6600 pF @ 25 V | ±20V | - | 107W (Tc) | 3.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 1.7A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock6,102 |
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MOSFET (Metal Oxide) | 400 V | 1.7A (Tc) | 10V | 4V @ 250µA | 12 nC @ 10 V | 170 pF @ 25 V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3.6Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
P-CHANNEL 80 V (D-S) MOSFET D2PA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock2,394 |
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MOSFET (Metal Oxide) | 80 V | 150A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 218 nC @ 10 V | 9600 pF @ 40 V | ±20V | - | 375W (Tc) | 6.1mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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