Page 81 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

SIHG80N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 80A TO247AC

Package: TO-247-3

Stock7,716
SIHG47N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 47A TO247AC

Package: TO-247-3

Stock126,828
SIHW47N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 47A TO-247AD

Package: TO-3P-3 Full Pack

Stock9,096
SIHG47N60AE-GE3
Vishay Siliconix

MOSFET N-CH 600V 43A TO247AC

Package: TO-247-3

Stock17,772
IRFP21N60LPBF
Vishay Siliconix

MOSFET N-CH 600V 21A TO-247AC

Package: TO-247-3

Stock11,124
IRFP450LCPBF
Vishay Siliconix

MOSFET N-CH 500V 14A TO-247AC

Package: TO-247-3

Stock4,832
SIHS36N50D-E3
Vishay Siliconix

MOSFET N-CH 500V 36A SUPER-247

Package: TO-247-3

Stock11,760
SIHG33N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 31.6A TO-247AC

Package: TO-247-3

Stock10,296
SIHG28N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 28A TO-247AC

Package: TO-247-3

Stock10,692
SIHG40N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 40A TO247AC

Package: TO-247-3

Stock14,784
SIHG35N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 32A TO247AC

Package: TO-247-3

Stock16,476
SIHP38N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 43A TO220AB

Package: TO-220-3

Stock21,276
IRFP350LCPBF
Vishay Siliconix

MOSFET N-CH 400V 16A TO-247AC

Package: TO-247-3

Stock253,320
SIHP28N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 28A TO-220AB

Package: TO-220-3

Stock19,752
SIHG30N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 29A TO247AC

Package: TO-247-3

Stock6,648
SIHB35N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 32A D2PAK TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,328
SIHG24N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 24A TO247AC

Package: TO-247-3

Stock14,736
SIHP35N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 32A TO220AB

Package: TO-220-3

Stock12,438
SIHB24N65E-GE3
Vishay Siliconix

MOSFET N-CH 650V 24A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,196
SIHF35N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 32A TO220

Package: TO-220-3 Full Pack

Stock14,094

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SIHG80N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 80A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 443nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock7,716	MOSFET (Metal Oxide)	600V	80A (Tc)	10V	4V @ 250µA	443nC @ 10V	6900pF @ 100V	±30V	-	520W (Tc)	30 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHG47N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 47A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock126,828	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	4V @ 250µA	220nC @ 10V	9620pF @ 100V	±30V	-	357W (Tc)	64 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHW47N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 47A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 64 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-3P-3 Full Pack	Package: TO-3P-3 Full Pack	Stock9,096	MOSFET (Metal Oxide)	600V	47A (Tc)	10V	4V @ 250µA	220nC @ 10V	9620pF @ 100V	±20V	-	357W (Tc)	64 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD	TO-3P-3 Full Pack
SIHG47N60AE-GE3	Vishay Siliconix	MOSFET N-CH 600V 43A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock17,772	MOSFET (Metal Oxide)	600V	43A (Tc)	10V	4V @ 250µA	182nC @ 10V	3600pF @ 100V	±30V	-	313W (Tc)	65 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFP21N60LPBF	Vishay Siliconix	MOSFET N-CH 600V 21A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock11,124	MOSFET (Metal Oxide)	600V	21A (Tc)	10V	5V @ 250µA	150nC @ 10V	4000pF @ 25V	±30V	-	330W (Tc)	320 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFP450LCPBF	Vishay Siliconix	MOSFET N-CH 500V 14A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,832	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	74nC @ 10V	2200pF @ 25V	±30V	-	190W (Tc)	400 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SIHS36N50D-E3	Vishay Siliconix	MOSFET N-CH 500V 36A SUPER-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-247-3	Package: TO-247-3	Stock11,760	MOSFET (Metal Oxide)	500V	36A (Tc)	10V	5V @ 250µA	125nC @ 10V	3233pF @ 100V	±30V	-	446W (Tc)	130 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-247-3
SIHG33N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 31.6A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 171nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4026pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 109 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock10,296	MOSFET (Metal Oxide)	650V	31.6A (Tc)	10V	4V @ 250µA	171nC @ 10V	4026pF @ 100V	±30V	-	313W (Tc)	109 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHG28N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 28A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3249pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock10,692	MOSFET (Metal Oxide)	650V	28A (Tc)	10V	4V @ 250µA	146nC @ 10V	3249pF @ 100V	±30V	-	250W (Tc)	117 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHG40N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 40A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4436pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock14,784	MOSFET (Metal Oxide)	600V	40A (Tc)	10V	4V @ 250µA	197nC @ 10V	4436pF @ 100V	±30V	-	329W (Tc)	75 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHG35N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock16,476	MOSFET (Metal Oxide)	600V	32A (Tc)	10V	4V @ 250µA	132nC @ 10V	2760pF @ 100V	±30V	-	250W (Tc)	94 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHP38N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 43A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 313W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock21,276	MOSFET (Metal Oxide)	600V	43A (Tc)	10V	4V @ 250µA	183nC @ 10V	3600pF @ 100V	±30V	-	313W (Tc)	65 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP350LCPBF	Vishay Siliconix	MOSFET N-CH 400V 16A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock253,320	MOSFET (Metal Oxide)	400V	16A (Tc)	10V	4V @ 250µA	76nC @ 10V	2200pF @ 25V	±30V	-	190W (Tc)	300 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SIHP28N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 28A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3249pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock19,752	MOSFET (Metal Oxide)	650V	28A (Tc)	10V	4V @ 250µA	146nC @ 10V	3249pF @ 100V	±30V	-	250W (Tc)	117 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHG30N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 29A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,648	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	4V @ 250µA	130nC @ 10V	2600pF @ 100V	±30V	-	250W (Tc)	125 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHB35N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A D2PAK TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,328	MOSFET (Metal Oxide)	650V	32A (Tc)	10V	4V @ 250µA	132nC @ 10V	2760pF @ 100V	±30V	-	250W (Tc)	94 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHG24N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 156 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock14,736	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2774pF @ 100V	±30V	-	250W (Tc)	156 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHP35N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,438	MOSFET (Metal Oxide)	600V	32A (Tc)	10V	4V @ 250µA	132nC @ 10V	2760pF @ 100V	±30V	-	250W (Tc)	94 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHB24N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 24A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,196	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2740pF @ 100V	±30V	-	250W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHF35N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock14,094	MOSFET (Metal Oxide)	600V	32A (Tc)	10V	4V @ 250µA	132nC @ 10V	2760pF @ 100V	±30V	-	39W (Tc)	94 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHP24N65E-E3	Vishay Siliconix	MOSFET N-CH 650V 24A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock23,016	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2740pF @ 100V	±30V	-	250W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFPE30PBF	Vishay Siliconix	MOSFET N-CH 800V 4.1A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock9,492	MOSFET (Metal Oxide)	800V	4.1A (Tc)	10V	4V @ 250µA	78nC @ 10V	1300pF @ 25V	±20V	-	125W (Tc)	3 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SIHG21N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 21A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock8,424	MOSFET (Metal Oxide)	650V	21A (Tc)	10V	4V @ 250µA	106nC @ 10V	2322pF @ 100V	±30V	-	208W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHG25N60EFL-GE3	Vishay Siliconix	MOSFET N-CH 600V 25A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2274pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 146 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock10,464	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	5V @ 250µA	75nC @ 10V	2274pF @ 100V	±30V	-	250W (Tc)	146 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIHB21N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 21A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,472	MOSFET (Metal Oxide)	650V	21A (Tc)	10V	4V @ 250µA	106nC @ 10V	2322pF @ 100V	±30V	-	208W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIHP25N60EFL-GE3	Vishay Siliconix	MOSFET N-CH 600V 25A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2274pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 146 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock23,964	MOSFET (Metal Oxide)	600V	25A (Tc)	10V	5V @ 250µA	75nC @ 10V	2274pF @ 100V	±30V	-	250W (Tc)	146 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SIHG23N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 23A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2418pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock9,096	MOSFET (Metal Oxide)	600V	23A (Tc)	10V	4V @ 250µA	95nC @ 10V	2418pF @ 100V	±30V	-	227W (Tc)	158 mOhm @ 12A, 10V	-55°C ~ 150°C (TA)	Through Hole	TO-247AC	TO-247-3
SIHA21N65EF-E3	Vishay Siliconix	MOSFET N-CH 650V 21A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,184	MOSFET (Metal Oxide)	650V	21A (Tc)	10V	4V @ 250µA	106nC @ 10V	2322pF @ 100V	±30V	-	35W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack