|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 120A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,448 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 330nC @ 10V | 14700pF @ 25V | ±20V | - | 375W (Tc) | 3.5 mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 90A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,048 |
|
MOSFET (Metal Oxide) | 200V | 90A (Tc) | 7.5V, 10V | 4V @ 250µA | 87nC @ 10V | 3120pF @ 100V | ±20V | - | 375W (Tc) | 15 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 80V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,880 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.5V @ 250µA | 165nC @ 10V | 12000pF @ 25V | ±20V | - | 375W (Tc) | 3.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 20V 50A POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 143nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 18A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (S)
- Package / Case: 10-PolarPAK? (S)
|
Package: 10-PolarPAK? (S) |
Stock6,912 |
|
MOSFET (Metal Oxide) | 20V | 50A (Tc) | 2.5V, 4.5V | 2V @ 250µA | 143nC @ 10V | 4300pF @ 10V | ±12V | - | 5.2W (Ta), 104W (Tc) | 3.5 mOhm @ 18A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (S) | 10-PolarPAK? (S) |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 50A 10-POLARPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 10-PolarPAK? (S)
- Package / Case: 10-PolarPAK? (S)
|
Package: 10-PolarPAK? (S) |
Stock7,280 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 77nC @ 10V | 3800pF @ 20V | ±20V | - | 5.2W (Ta), 104W (Tc) | 5.5 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (S) | 10-PolarPAK? (S) |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 15A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,441,752 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 2.5V, 10V | 1.5V @ 250µA | 50nC @ 4.5V | - | ±12V | - | 1.6W (Ta) | 4.5 mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 11A POWERPAK8X8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1076pF @ 100V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Rds On (Max) @ Id, Vgs: 339 mOhm @ 5.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 8 x 8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock5,680 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 62nC @ 10V | 1076pF @ 100V | ±30V | - | 114W (Tc) | 339 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
|
|
|
Vishay Siliconix |
MOSFET N-CH 80V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,288 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 7.5V, 10V | 4V @ 250µA | 141nC @ 10V | 7910pF @ 40V | ±20V | - | 375W (Tc) | 3.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 150V 128A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3425pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,800 |
|
MOSFET (Metal Oxide) | 150V | 128A (Tc) | 7.5V, 10V | 5V @ 250µA | 95nC @ 10V | 3425pF @ 75V | ±20V | - | 375W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
|
Package: TO-263-7, D2Pak (6 Leads + Tab) |
Stock3,840 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 7.5V, 10V | 4V @ 250µA | 120nC @ 10V | 5100pF @ 50V | ±20V | - | 375W (Tc) | 3.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 120A TO263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14280pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,336 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 270nC @ 10V | 14280pF @ 25V | ±20V | - | 375W (Tc) | 6.7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET P-CH 40V 120A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,176 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 330nC @ 10V | 13980pF @ 20V | ±20V | - | 375W (Tc) | 4 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 20.7A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 7.1W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,936 |
|
MOSFET (Metal Oxide) | 40V | 20.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 62nC @ 10V | 2440pF @ 20V | ±20V | - | 7.1W (Tc) | 9 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Vishay Siliconix |
MOSFET P-CH 40V 50A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,288 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 155nC @ 10V | 6675pF @ 20V | ±20V | - | 136W (Tc) | 9.4 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 40V 50A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,720 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 90nC @ 10V | 3590pF @ 20V | ±20V | - | 3W (Ta), 136W (Tc) | 13 mOhm @ 17A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 80V 32A PPAK SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 10.2A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock4,432 |
|
MOSFET (Metal Oxide) | 80V | 32A (Tc) | 6V, 10V | 2.5V @ 250µA | 155nC @ 10V | 5100pF @ 40V | ±20V | - | 100W (Tc) | 25 mOhm @ 10.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 80V 7.6A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Ta)
- Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock64,836 |
|
MOSFET (Metal Oxide) | 80V | 7.6A (Ta) | 6V, 10V | 2V @ 250µA (Min) | 41nC @ 10V | - | ±20V | - | 1.9W (Ta) | 16.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 58A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
- Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock48,576 |
|
MOSFET (Metal Oxide) | 40V | 58A (Tc) | 4.5V, 10V | 3V @ 250µA | 77nC @ 10V | 3540pF @ 20V | ±20V | - | 4.6W (Ta), 46W (Tc) | 7.5 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 40V 30A
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock3,312 |
|
MOSFET (Metal Oxide) | 40V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 150nC @ 10V | 5875pF @ 20V | ±20V | - | 83W (Tc) | 10 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 75V 28A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 35V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock12,456 |
|
MOSFET (Metal Oxide) | 75V | 28A (Tc) | 10V | 2.5V @ 250µA | 100nC @ 10V | 2900pF @ 35V | ±20V | - | 5.4W (Ta), 96W (Tc) | 11 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock568,152 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 110nC @ 10V | 4590pF @ 15V | ±20V | - | 5.4W (Ta), 83W (Tc) | 2.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 120A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11155pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,608 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 230nC @ 10V | 11155pF @ 30V | ±20V | - | 375W (Tc) | 1.6 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock90,840 |
|
MOSFET (Metal Oxide) | 150V | 53.7A (Tc) | 10V | 3.5V @ 250µA | 64nC @ 10V | 2130pF @ 75V | ±20V | - | 6.25W (Ta), 104W (Tc) | 18 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 60A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock4,160 |
|
MOSFET (Metal Oxide) | 100V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 76nC @ 10V | 2450pF @ 50V | ±20V | - | 6.25W (Ta), 104W (Tc) | 7.2 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 25V 50A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2645pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 50W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock5,376 |
|
MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 60nC @ 10V | 2645pF @ 10V | ±20V | - | 5W (Ta), 50W (Tc) | 3.2 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 25A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SO-8
- Package / Case: PowerPAK? SO-8
|
Package: PowerPAK? SO-8 |
Stock336,900 |
|
MOSFET (Metal Oxide) | 200V | 25A (Tc) | 6V, 10V | 4V @ 250µA | 77nC @ 10V | 2250pF @ 100V | ±20V | - | 5.4W (Ta), 96W (Tc) | 70 mOhm @ 5.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 200A PWRPAK 8X8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14780pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 8 x 8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock3,456 |
|
MOSFET (Metal Oxide) | 40V | 200A (Tc) | 10V | 3.5V @ 250µA | 165nC @ 10V | 14780pF @ 25V | ±20V | - | 150W (Tc) | 1.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
|
|
|
Vishay Siliconix |
MOSFET N-CH 40V 200A PWRPAK 8X8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 8 x 8
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock6,384 |
|
MOSFET (Metal Oxide) | 40V | 200A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 220nC @ 10V | 14500pF @ 25V | ±20V | - | 150W (Tc) | 1.2 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
0
Login/Register
BOM
Cart
