Page 96 - Vishay Siliconix Products - Transistors - FETs, MOSFETs - Single

IRF510STRLPBF
Vishay Siliconix

MOSFET N-CH 100V 5.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,200
SI7112DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 11.3A 1212-8

Package: PowerPAK? 1212-8

Stock338,820
SI4396DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 16A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,352
SQD19P06-60L_GE3
Vishay Siliconix

MOSFET P-CH 60V 20A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,056
SI7112DN-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 11.3A 1212-8

Package: PowerPAK? 1212-8

Stock168,492
IRF9510STRLPBF
Vishay Siliconix

MOSFET P-CH 100V 4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,600
SIS452DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 12V 35A 1212-8 PPAK

Package: PowerPAK? 1212-8

Stock6,256
SISA04DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A 1212-8

Package: PowerPAK? 1212-8

Stock40,800
SQJ459EP-T1_GE3
Vishay Siliconix

MOSFET P-CH 60V 52A SO8

Package: PowerPAK? SO-8

Stock3,648
SIR466DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock297,768
IRF510STRRPBF
Vishay Siliconix

MOSFET N-CH 100V 5.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,400
SI7106DN-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 12.5A 1212-8

Package: PowerPAK? 1212-8

Stock398,040
SI4686DY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 18.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,203,804
SI4874BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock725,412
IRFR210TRLPBF
Vishay Siliconix

MOSFET N-CH 200V 2.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,912
SI4436DY-T1-E3
Vishay Siliconix

MOSFET N-CH 60V 8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,243,044
IRFR9014TRPBF
Vishay Siliconix

MOSFET P-CH 60V 5.1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock70,200
SI7617DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V 35A 1212-8 PPAK

Package: PowerPAK? 1212-8

Stock69,324
SQ3460EV-T1_GE3
Vishay Siliconix

MOSFET N-CH 20V 8A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,992
SIR412DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 20A PPAK SO-8

Package: PowerPAK? SO-8

Stock59,760

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF510STRLPBF	Vishay Siliconix	MOSFET N-CH 100V 5.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,200	MOSFET (Metal Oxide)	100V	5.6A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	43W (Tc)	540 mOhm @ 3.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7112DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 11.3A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 17.8A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock338,820	MOSFET (Metal Oxide)	30V	11.3A (Tc)	4.5V, 10V	1.5V @ 250µA	27nC @ 4.5V	2610pF @ 15V	±12V	-	1.5W (Ta)	7.5 mOhm @ 17.8A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI4396DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 16A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1675pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc) Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,352	MOSFET (Metal Oxide)	30V	16A (Tc)	4.5V, 10V	2.6V @ 250µA	45nC @ 10V	1675pF @ 15V	±20V	-	3.1W (Ta), 5.4W (Tc)	11.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SQD19P06-60L_GE3	Vishay Siliconix	MOSFET P-CH 60V 20A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,056	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	41nC @ 10V	1490pF @ 25V	±20V	-	46W (Tc)	55 mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7112DN-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 11.3A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 17.8A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock168,492	MOSFET (Metal Oxide)	30V	11.3A (Tc)	4.5V, 10V	1.5V @ 250µA	27nC @ 4.5V	2610pF @ 15V	±12V	-	1.5W (Ta)	7.5 mOhm @ 17.8A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IRF9510STRLPBF	Vishay Siliconix	MOSFET P-CH 100V 4A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,600	MOSFET (Metal Oxide)	100V	4A (Tc)	10V	4V @ 250µA	8.7nC @ 10V	200pF @ 25V	±20V	-	3.7W (Ta), 43W (Tc)	1.2 Ohm @ 2.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIS452DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 6V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3.25 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock6,256	MOSFET (Metal Oxide)	12V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	41nC @ 10V	1700pF @ 6V	±20V	-	3.8W (Ta), 52W (Tc)	3.25 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SISA04DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 40A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 2.15 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock40,800	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.2V @ 250µA	77nC @ 10V	3595pF @ 15V	+20V, -16V	-	3.7W (Ta), 52W (Tc)	2.15 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SQJ459EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 60V 52A SO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4586pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock3,648	MOSFET (Metal Oxide)	60V	52A (Tc)	4.5V, 10V	2.5V @ 250µA	108nC @ 10V	4586pF @ 30V	±20V	-	83W (Tc)	18 mOhm @ 3.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SIR466DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock297,768	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.4V @ 250µA	65nC @ 10V	2730pF @ 15V	±20V	-	5W (Ta), 54W (Tc)	3.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRF510STRRPBF	Vishay Siliconix	MOSFET N-CH 100V 5.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,400	MOSFET (Metal Oxide)	100V	5.6A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	3.7W (Ta), 43W (Tc)	540 mOhm @ 3.4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI7106DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock398,040	MOSFET (Metal Oxide)	20V	12.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	27nC @ 4.5V	-	±12V	-	1.5W (Ta)	6.2 mOhm @ 19.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SI4686DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 5.2W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,203,804	MOSFET (Metal Oxide)	30V	18.2A (Tc)	4.5V, 10V	3V @ 250µA	26nC @ 10V	1220pF @ 15V	±20V	-	3W (Ta), 5.2W (Tc)	9.5 mOhm @ 13.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4874BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock725,412	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 4.5V	3230pF @ 15V	±20V	-	1.6W (Ta)	7 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR210TRLPBF	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,912	MOSFET (Metal Oxide)	200V	2.6A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	1.5 Ohm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4436DY-T1-E3	Vishay Siliconix	MOSFET N-CH 60V 8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,243,044	MOSFET (Metal Oxide)	60V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	32nC @ 10V	1100pF @ 30V	±20V	-	2.5W (Ta), 5W (Tc)	36 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFR9014TRPBF	Vishay Siliconix	MOSFET P-CH 60V 5.1A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock70,200	MOSFET (Metal Oxide)	60V	5.1A (Tc)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	500 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7617DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 35A 1212-8 PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 13.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock69,324	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	59nC @ 10V	1800pF @ 15V	±25V	-	3.7W (Ta), 52W (Tc)	12.3 mOhm @ 13.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SQ3460EV-T1_GE3	Vishay Siliconix	MOSFET N-CH 20V 8A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.6W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,992	MOSFET (Metal Oxide)	20V	8A (Tc)	1.8V, 4.5V	1V @ 250µA	14nC @ 4.5V	1060pF @ 10V	±8V	-	3.6W (Tc)	30 mOhm @ 5.1A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SIR412DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 20A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock59,760	MOSFET (Metal Oxide)	25V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	16nC @ 10V	600pF @ 10V	±20V	-	3.9W (Ta), 15.6W (Tc)	12 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
SI2319DS-T1-E3	Vishay Siliconix	MOSFET P-CH 40V 2.3A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 82 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,114,356	MOSFET (Metal Oxide)	40V	2.3A (Ta)	4.5V, 10V	3V @ 250µA	17nC @ 10V	470pF @ 20V	±20V	-	750mW (Ta)	82 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRFL210TRPBF	Vishay Siliconix	MOSFET N-CH 200V 0.96A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 960mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 580mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock883,200	MOSFET (Metal Oxide)	200V	960mA (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	1.5 Ohm @ 580mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SQ2319ADS-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 4.6A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,312	MOSFET (Metal Oxide)	40V	4.6A (Tc)	4.5V, 10V	2.5V @ 250µA	16nC @ 10V	620pF @ 20V	±20V	-	2.5W (Tc)	75 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI3447CDV-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 7.8A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Ta), 3W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock815,352	MOSFET (Metal Oxide)	12V	7.8A (Tc)	1.8V, 4.5V	1V @ 250µA	30nC @ 8V	910pF @ 6V	±8V	-	2W (Ta), 3W (Tc)	36 mOhm @ 6.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI8473EDB-T1-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 41 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock3,968	MOSFET (Metal Oxide)	20V	-	2.5V, 4.5V	1.5V @ 250µA	-	-	±12V	-	1.1W (Ta), 2.7W (Tc)	41 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
SI4829DY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 2A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 215 mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock90,000	MOSFET (Metal Oxide)	20V	2A (Tc)	2.5V, 4.5V	1.5V @ 250µA	8nC @ 10V	210pF @ 10V	±12V	Schottky Diode (Isolated)	2W (Ta), 3.1W (Tc)	215 mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI3805DV-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 3.3A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta), 1.4W (Tc) Rds On (Max) @ Id, Vgs: 84 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,456	MOSFET (Metal Oxide)	20V	3.3A (Tc)	2.5V, 10V	1.5V @ 250µA	12nC @ 10V	330pF @ 10V	±12V	Schottky Diode (Isolated)	1.1W (Ta), 1.4W (Tc)	84 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SI1400DL-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 1.6A SC-70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock428,532	MOSFET (Metal Oxide)	20V	1.6A (Ta)	2.5V, 4.5V	600mV @ 250µA (Min)	4nC @ 4.5V	-	±12V	-	568mW (Ta)	150 mOhm @ 1.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6 (SOT-363)	6-TSSOP, SC-88, SOT-363