Currently, the Murata MGJ2 SMD family from TTI Europe has been developed to provide optimized positive and negative voltages for IGBT/MOS and SiC gate drivers. Features low ultra-low isolation capacitance to reduce CMTI and signal limiting in high switching speed applications.
The series has partial discharge performance, CMTI & GT; 200kV/µs and has a continuous isolation barrier to withstand voltages up to 2.5kV.
The device is a compact, low-profile, lightweight surface-mounted solution with enhanced insulation for 250VAC pending UL62368-1, ES60601-1, 2 and MOPP identification pending. Gate drive applications featuring reliable performance in high voltage applications.
Typical applications include energy-DC /AC conversion, energy-DC to high-power DC for grid transmission, solar inverter optimization, and wind turbines.
