High power, high speed power MOSFET driver

The IR2011 is a high-power, high-speed power MOSFET driver with a separate high-low side reference output channel. Logic input compatible with standard CMOS or LSTTL output, as low as 3.0V logic. The output driver has a high pulse current buffer stage designed for minimal driver cross conduction. Propagation delay matching to simplify use in high frequency applications.

A floating channel can be used to drive a high-side configuration of N-channel power mosFETs that operate at up to 200 volts. Proprietary HVIC and latch-immune CMOS technology enable a rugged overall structure.

IR2011 Typical Connection Diagram

Lead Assignments

IR2011 Functional Block Diagram

Timing Diagram

                         
Features

● Floating channel designed for bootstrap operation

● Fully the operational to 200 v

● Tolerant to negative transient voltage, dV/dt immune

● Gate drive supply range from 10 to 20 v

● Independent low and high side channels

● Input logic HIN/LIN active high

● Undervoltage lockout for both channels

● 3.3 V and 5 V logic compatible

● CMOS Schmitt triggered - inputs with the pull - down

● Matched the propagation delay for both channels