New Series of 1200V SiC Schottky diodes

The rated current of the LSIC2SD120A08 series, the LSIC2SD120A15 series and the LSIC2SD120A20 series is 8A, 15A, 20A, using TO-220-2L encapsulation. In addition, the rated current of the LSIC2SD120C08 series is 8A in the TO-252-2L package. The GEN2 SiC Schottky diode combined with the p-n Schottky (MPS) device architecture enhanced the surge capacity and reduced the leakage current. Using new GEN2 SiC Schottky diode instead of standard silicon bipolar power diode, circuit designers can significantly reduce switching losses, adapt to large surge current without thermal runaway, and operate at junction temperature of up to 175 degrees C. This makes the efficiency and robustness of the power electronic system greatly improved. The typical applications of these new GEN2 SiC Schottky diodes include: Active power factor correction (PFC) Step-down or boost stage in DC-DC converter Continuous current diode in inverter level High frequency output rectifier They can serve the market including industrial power, solar energy, industrial motor drive, welding and plasma cutting, electric vehicle charging station, induction cooking field and so on. The GEN2 SiC Schottky diode has the following main advantages: The best capacitance memory charge and negligible reverse recovery function of the same kind ensure that the switching loss is very low, and the pressure on switch is reduced, so that it can be applied to high frequency power switch. The best forward pressure drop (VF) of the same kind can reduce the conduction loss. The maximum junction temperature of 175 degree C allows greater design margin and loose heat management requirements.