ON Semiconductor - Robust and cost-effective Trench technology insulated gate bipolar transistors (NGTB75N60SWG)

ON Semiconductor's NGTB 25-75A Insulated Gate Bipolar Transistor (IGBT) has a robust and cost-effective Trench structure. This device provides excellent performance in demanding switching applications while providing low on-voltage and minimal switching losses. They are particularly suitable for welding applications. Integrated in the device is a soft fast co-packaged freewheeling diode with low forward voltage.