Page 86 - Diodes Incorporated Products - Transistors - FETs, MOSFETs - Single

ZVN4525E6TC
Diodes Incorporated

MOSFET N-CH 250V 0.23A SOT23-6

Package: SOT-23-6

Stock7,888
ZVN4424GTC
Diodes Incorporated

MOSFET N-CH 240V 0.5A SOT223

Package: TO-261-4, TO-261AA

Stock145,152
ZVN4424ASTOB
Diodes Incorporated

MOSFET N-CH 240V 0.26A TO92-3

Package: E-Line-3

Stock5,424
ZVN4424ASTOA
Diodes Incorporated

MOSFET N-CH 240V 0.26A TO92-3

Package: E-Line-3

Stock24,000
ZVN4310GTC
Diodes Incorporated

MOSFET N-CH 100V 1.67A SOT223

Package: TO-261-4, TO-261AA

Stock120,492
ZVN4310ASTZ
Diodes Incorporated

MOSFET N-CH 100V 0.9A TO92-3

Package: E-Line-3

Stock4,016
ZVN4310ASTOB
Diodes Incorporated

MOSFET N-CH 100V 0.9A TO92-3

Package: E-Line-3

Stock2,448
ZVN4306GVTC
Diodes Incorporated

MOSFET N-CH 60V 2.1A SOT223

Package: TO-261-4, TO-261AA

Stock120,012
ZVN4306GTC
Diodes Incorporated

MOSFET N-CH 60V 2.1A SOT223

Package: TO-261-4, TO-261AA

Stock120,012
ZVN4306AVSTZ
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

Package: E-Line-3

Stock7,440
ZVN4306AVSTOB
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

Package: E-Line-3

Stock2,816
ZVN4306AVSTOA
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

Package: E-Line-3

Stock6,624
ZVN4306ASTZ
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

Package: E-Line-3

Stock5,648
ZVN4306ASTOB
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

Package: E-Line-3

Stock6,864
ZVN4306ASTOA
Diodes Incorporated

MOSFET N-CH 60V 1.1A TO92-3

Package: E-Line-3

Stock2,032
ZVN4210GTC
Diodes Incorporated

MOSFET N-CH 100V 800MA SOT223

Package: TO-261-4, TO-261AA

Stock120,012
ZVN4210ASTOB
Diodes Incorporated

MOSFET N-CH 100V 450MA TO92-3

Package: E-Line-3

Stock6,576
ZVN4206GVTC
Diodes Incorporated

MOSFET N-CH 60V 1A SOT223

Package: TO-261-4, TO-261AA

Stock120,012
ZVN4206AVSTOB
Diodes Incorporated

MOSFET N-CH 60V 0.6A TO92-3

Package: E-Line-3

Stock7,920
ZVN4206ASTOB
Diodes Incorporated

MOSFET N-CH 60V 0.6A TO92-3

Package: E-Line-3

Stock22,560

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
ZVN4525E6TC	Diodes Incorporated	MOSFET N-CH 250V 0.23A SOT23-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Vgs(th) (Max) @ Id: 1.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock7,888	MOSFET (Metal Oxide)	250V	230mA (Ta)	2.4V, 10V	1.8V @ 1mA	3.65nC @ 10V	72pF @ 25V	±40V	-	1.1W (Ta)	8.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
ZVN4424GTC	Diodes Incorporated	MOSFET N-CH 240V 0.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock145,152	MOSFET (Metal Oxide)	240V	500mA (Ta)	2.5V, 10V	1.8V @ 1mA	-	200pF @ 25V	±40V	-	2.5W (Ta)	5.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVN4424ASTOB	Diodes Incorporated	MOSFET N-CH 240V 0.26A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock5,424	MOSFET (Metal Oxide)	240V	260mA (Ta)	2.5V, 10V	1.8V @ 1mA	-	200pF @ 25V	±40V	-	750mW (Ta)	5.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4424ASTOA	Diodes Incorporated	MOSFET N-CH 240V 0.26A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock24,000	MOSFET (Metal Oxide)	240V	260mA (Ta)	2.5V, 10V	1.8V @ 1mA	-	200pF @ 25V	±40V	-	750mW (Ta)	5.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4310GTC	Diodes Incorporated	MOSFET N-CH 100V 1.67A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.67A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock120,492	MOSFET (Metal Oxide)	100V	1.67A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	3W (Ta)	540 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVN4310ASTZ	Diodes Incorporated	MOSFET N-CH 100V 0.9A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock4,016	MOSFET (Metal Oxide)	100V	900mA (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	500 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4310ASTOB	Diodes Incorporated	MOSFET N-CH 100V 0.9A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock2,448	MOSFET (Metal Oxide)	100V	900mA (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	500 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4306GVTC	Diodes Incorporated	MOSFET N-CH 60V 2.1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock120,012	MOSFET (Metal Oxide)	60V	2.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	3W (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVN4306GTC	Diodes Incorporated	MOSFET N-CH 60V 2.1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock120,012	MOSFET (Metal Oxide)	60V	2.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	3W (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVN4306AVSTZ	Diodes Incorporated	MOSFET N-CH 60V 1.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock7,440	MOSFET (Metal Oxide)	60V	1.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4306AVSTOB	Diodes Incorporated	MOSFET N-CH 60V 1.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock2,816	MOSFET (Metal Oxide)	60V	1.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4306AVSTOA	Diodes Incorporated	MOSFET N-CH 60V 1.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock6,624	MOSFET (Metal Oxide)	60V	1.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4306ASTZ	Diodes Incorporated	MOSFET N-CH 60V 1.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock5,648	MOSFET (Metal Oxide)	60V	1.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4306ASTOB	Diodes Incorporated	MOSFET N-CH 60V 1.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock6,864	MOSFET (Metal Oxide)	60V	1.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4306ASTOA	Diodes Incorporated	MOSFET N-CH 60V 1.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 850mW (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock2,032	MOSFET (Metal Oxide)	60V	1.1A (Ta)	5V, 10V	3V @ 1mA	-	350pF @ 25V	±20V	-	850mW (Ta)	330 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4210GTC	Diodes Incorporated	MOSFET N-CH 100V 800MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock120,012	MOSFET (Metal Oxide)	100V	800mA (Ta)	5V, 10V	2.4V @ 1mA	-	100pF @ 25V	±20V	-	2W (Ta)	1.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVN4210ASTOB	Diodes Incorporated	MOSFET N-CH 100V 450MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock6,576	MOSFET (Metal Oxide)	100V	450mA (Ta)	5V, 10V	2.4V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	1.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4206GVTC	Diodes Incorporated	MOSFET N-CH 60V 1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock120,012	MOSFET (Metal Oxide)	60V	1A (Ta)	5V, 10V	3V @ 1mA	-	100pF @ 25V	±20V	-	2W (Ta)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVN4206AVSTOB	Diodes Incorporated	MOSFET N-CH 60V 0.6A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock7,920	MOSFET (Metal Oxide)	60V	600mA (Ta)	5V, 10V	3V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4206ASTOB	Diodes Incorporated	MOSFET N-CH 60V 0.6A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock22,560	MOSFET (Metal Oxide)	60V	600mA (Ta)	5V, 10V	3V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4206ASTOA	Diodes Incorporated	MOSFET N-CH 60V 0.6A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock24,000	MOSFET (Metal Oxide)	60V	600mA (Ta)	5V, 10V	3V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	1 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN4106FTC	Diodes Incorporated	MOSFET N-CH 60V 0.2A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,272	MOSFET (Metal Oxide)	60V	200mA (Ta)	5V, 10V	3V @ 1mA	-	35pF @ 25V	±20V	-	350mW (Ta)	2.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZVN3320FTC	Diodes Incorporated	MOSFET N-CH 200V 0.06A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 60mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,568	MOSFET (Metal Oxide)	200V	60mA (Ta)	10V	3V @ 1mA	-	45pF @ 25V	±20V	-	330mW (Ta)	25 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZVN3320ASTZ	Diodes Incorporated	MOSFET N-CH 200V 0.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock6,960	MOSFET (Metal Oxide)	200V	100mA (Ta)	10V	3V @ 1mA	-	45pF @ 25V	±20V	-	625mW (Ta)	25 Ohm @ 100mA, 10V	-	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN3320ASTOB	Diodes Incorporated	MOSFET N-CH 200V 0.1A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock6,608	MOSFET (Metal Oxide)	200V	100mA (Ta)	10V	3V @ 1mA	-	45pF @ 25V	±20V	-	625mW (Ta)	25 Ohm @ 100mA, 10V	-	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN3310FTC	Diodes Incorporated	MOSFET N-CH 100V 100MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,376	MOSFET (Metal Oxide)	100V	100mA (Ta)	10V	2.4V @ 1mA	-	40pF @ 25V	±20V	-	330mW (Ta)	10 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZVN3310ASTOA	Diodes Incorporated	MOSFET N-CH 100V 200MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock18,864	MOSFET (Metal Oxide)	100V	200mA (Ta)	10V	2.4V @ 1mA	-	40pF @ 25V	±20V	-	625mW (Ta)	10 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVN3306FTC	Diodes Incorporated	MOSFET N-CH 60V 0.15A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,504	MOSFET (Metal Oxide)	60V	150mA (Ta)	10V	2.4V @ 1mA	-	35pF @ 18V	±20V	-	330mW (Ta)	5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3