Page 88 - Diodes Incorporated Products - Transistors - FETs, MOSFETs - Single

ZXM64P03XTC
Diodes Incorporated

MOSFET P-CH 30V 3.8A 8MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock474,252
ZXM64P02XTC
Diodes Incorporated

MOSFET P-CH 20V 3.5A 8MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock378,504
ZXM64N03XTC
Diodes Incorporated

MOSFET N-CH 30V 5A 8MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock7,328
ZXM64N02XTC
Diodes Incorporated

MOSFET N-CH 20V 5.4A 8MSOP

Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Stock82,284
ZXM62P03GTA
Diodes Incorporated

MOSFET P-CH 30V 2.9A SOT223

Package: TO-261-4, TO-261AA

Stock262,068
ZXM61P03FTC
Diodes Incorporated

MOSFET P-CH 30V 1.1A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock794,544
ZXM61P02FTC
Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock666,672
ZXM61N03FTC
Diodes Incorporated

MOSFET N-CH 30V 1.4A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock633,996
ZXM41N10FTC
Diodes Incorporated

MOSFET N-CH 100V 170MA SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock7,792
ZVP4525GTC
Diodes Incorporated

MOSFET P-CH 250V 0.265A SOT223

Package: TO-261-4, TO-261AA

Stock7,712
ZVP4525E6TC
Diodes Incorporated

MOSFET P-CH 250V 0.197A SOT23-6

Package: SOT-23-6

Stock3,360
ZVP4424GTC
Diodes Incorporated

MOSFET P-CH 240V 0.48A SOT223

Package: TO-261-4, TO-261AA

Stock238,656
ZVP4424ASTOB
Diodes Incorporated

MOSFET P-CH 240V 0.2A TO92-3

Package: E-Line-3

Stock3,344
ZVP4424ASTOA
Diodes Incorporated

MOSFET P-CH 240V 0.2A TO92-3

Package: E-Line-3

Stock3,776
ZVP4105ASTOB
Diodes Incorporated

MOSFET P-CH 50V 0.175A TO92-3

Package: E-Line-3

Stock3,536
ZVP4105ASTOA
Diodes Incorporated

MOSFET P-CH 50V 0.175A TO92-3

Package: E-Line-3

Stock50,880
ZVP3310FTC
Diodes Incorporated

MOSFET P-CH 100V 0.075A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock6,432
ZVP3310ASTZ
Diodes Incorporated

MOSFET P-CH 100V 0.14A TO92-3

Package: E-Line-3

Stock5,824
ZVP3310ASTOB
Diodes Incorporated

MOSFET P-CH 100V 0.14A TO92-3

Package: E-Line-3

Stock4,336
ZVP3310ASTOA
Diodes Incorporated

MOSFET P-CH 100V 0.14A TO92-3

Package: E-Line-3

Stock7,984

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
ZXM64P03XTC	Diodes Incorporated	MOSFET P-CH 30V 3.8A 8MSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock474,252	MOSFET (Metal Oxide)	30V	3.8A (Ta)	4.5V, 10V	1V @ 250µA	46nC @ 10V	825pF @ 25V	±20V	-	1.1W (Ta)	75 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MSOP	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
ZXM64P02XTC	Diodes Incorporated	MOSFET P-CH 20V 3.5A 8MSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock378,504	MOSFET (Metal Oxide)	20V	3.5A (Ta)	2.7V, 4.5V	700mV @ 250µA	6.9nC @ 4.5V	900pF @ 15V	±12V	-	1.1W (Ta)	90 mOhm @ 2.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-MSOP	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
ZXM64N03XTC	Diodes Incorporated	MOSFET N-CH 30V 5A 8MSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock7,328	MOSFET (Metal Oxide)	30V	5A (Ta)	4.5V, 10V	1V @ 250µA	27nC @ 10V	950pF @ 25V	±20V	-	1.1W (Ta)	45 mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MSOP	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
ZXM64N02XTC	Diodes Incorporated	MOSFET N-CH 20V 5.4A 8MSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Stock82,284	MOSFET (Metal Oxide)	20V	5.4A (Ta)	2.7V, 4.5V	700mV @ 250µA	16nC @ 4.5V	1100pF @ 15V	±12V	-	1.1W (Ta)	40 mOhm @ 3.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-MSOP	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
ZXM62P03GTA	Diodes Incorporated	MOSFET P-CH 30V 2.9A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock262,068	MOSFET (Metal Oxide)	30V	2.9A (Ta), 4A (Tc)	4.5V, 10V	1V @ 250µA	10.2nC @ 10V	330pF @ 25V	±20V	-	2W (Ta)	150 mOhm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZXM61P03FTC	Diodes Incorporated	MOSFET P-CH 30V 1.1A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock794,544	MOSFET (Metal Oxide)	30V	1.1A (Ta)	4.5V, 10V	1V @ 250µA	4.8nC @ 10V	140pF @ 25V	±20V	-	625mW (Ta)	350 mOhm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZXM61P02FTC	Diodes Incorporated	MOSFET P-CH 20V 0.9A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock666,672	MOSFET (Metal Oxide)	20V	900mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	3.5nC @ 4.5V	150pF @ 15V	±12V	-	625mW (Ta)	600 mOhm @ 610mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZXM61N03FTC	Diodes Incorporated	MOSFET N-CH 30V 1.4A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 910mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock633,996	MOSFET (Metal Oxide)	30V	1.4A (Ta)	4.5V, 10V	1V @ 250µA	4.1nC @ 10V	150pF @ 25V	±20V	-	625mW (Ta)	220 mOhm @ 910mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZXM41N10FTC	Diodes Incorporated	MOSFET N-CH 100V 170MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,792	MOSFET (Metal Oxide)	100V	170mA (Ta)	3V, 4.5V	1.5V @ 1mA	-	25pF @ 25V	±40V	-	360mW (Ta)	8 Ohm @ 150mA, 4.5V	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZVP4525GTC	Diodes Incorporated	MOSFET P-CH 250V 0.265A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 265mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,712	MOSFET (Metal Oxide)	250V	265mA (Ta)	3.5V, 10V	2V @ 1mA	3.45nC @ 10V	73pF @ 25V	±40V	-	2W (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVP4525E6TC	Diodes Incorporated	MOSFET P-CH 250V 0.197A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 197mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6 Package / Case: SOT-23-6	Package: SOT-23-6	Stock3,360	MOSFET (Metal Oxide)	250V	197mA (Ta)	3.5V, 10V	2V @ 1mA	3.45nC @ 10V	73pF @ 25V	±40V	-	1.1W (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
ZVP4424GTC	Diodes Incorporated	MOSFET P-CH 240V 0.48A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock238,656	MOSFET (Metal Oxide)	240V	480mA (Ta)	3.5V, 10V	2V @ 1mA	-	200pF @ 25V	±40V	-	2.5W (Ta)	9 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVP4424ASTOB	Diodes Incorporated	MOSFET P-CH 240V 0.2A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock3,344	MOSFET (Metal Oxide)	240V	200mA (Ta)	3.5V, 10V	2V @ 1mA	-	200pF @ 25V	±40V	-	750mW (Ta)	9 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP4424ASTOA	Diodes Incorporated	MOSFET P-CH 240V 0.2A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock3,776	MOSFET (Metal Oxide)	240V	200mA (Ta)	3.5V, 10V	2V @ 1mA	-	200pF @ 25V	±40V	-	750mW (Ta)	9 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP4105ASTOB	Diodes Incorporated	MOSFET P-CH 50V 0.175A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 175mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock3,536	MOSFET (Metal Oxide)	50V	175mA (Ta)	5V	2V @ 1mA	-	40pF @ 25V	±20V	-	625mW (Ta)	10 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP4105ASTOA	Diodes Incorporated	MOSFET P-CH 50V 0.175A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 175mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock50,880	MOSFET (Metal Oxide)	50V	175mA (Ta)	5V	2V @ 1mA	-	40pF @ 25V	±20V	-	625mW (Ta)	10 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP3310FTC	Diodes Incorporated	MOSFET P-CH 100V 0.075A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 75mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,432	MOSFET (Metal Oxide)	100V	75mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 25V	±20V	-	330mW (Ta)	20 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZVP3310ASTZ	Diodes Incorporated	MOSFET P-CH 100V 0.14A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock5,824	MOSFET (Metal Oxide)	100V	140mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 25V	±20V	-	625mW (Ta)	20 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP3310ASTOB	Diodes Incorporated	MOSFET P-CH 100V 0.14A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock4,336	MOSFET (Metal Oxide)	100V	140mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 25V	±20V	-	625mW (Ta)	20 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP3310ASTOA	Diodes Incorporated	MOSFET P-CH 100V 0.14A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock7,984	MOSFET (Metal Oxide)	100V	140mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 25V	±20V	-	625mW (Ta)	20 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP3306FTC	Diodes Incorporated	MOSFET P-CH 60V 0.09A SOT23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock360,000	MOSFET (Metal Oxide)	60V	90mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 18V	±20V	-	330mW (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
ZVP3306ASTZ	Diodes Incorporated	MOSFET P-CH 60V 0.16A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock7,600	MOSFET (Metal Oxide)	60V	160mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 18V	±20V	-	625mW (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP3306ASTOB	Diodes Incorporated	MOSFET P-CH 60V 0.16A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock5,968	MOSFET (Metal Oxide)	60V	160mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 18V	±20V	-	625mW (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP2120GTC	Diodes Incorporated	MOSFET P-CH 200V 0.2A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,624	MOSFET (Metal Oxide)	200V	200mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	-	-	2W (Ta)	25 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVP2120ASTOB	Diodes Incorporated	MOSFET P-CH 200V 0.12A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock6,544	MOSFET (Metal Oxide)	200V	120mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	25 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP2120ASTOA	Diodes Incorporated	MOSFET P-CH 200V 0.12A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock7,184	MOSFET (Metal Oxide)	200V	120mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	25 Ohm @ 150mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
ZVP2110GTC	Diodes Incorporated	MOSFET P-CH 100V 0.31A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock240,012	MOSFET (Metal Oxide)	100V	310mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	±20V	-	2W (Ta)	8 Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVP2110ASTOB	Diodes Incorporated	MOSFET P-CH 100V 0.23A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 375mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock4,640	MOSFET (Metal Oxide)	100V	230mA (Ta)	10V	3.5V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	8 Ohm @ 375mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3