Page 1004 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4004-N-2-2-BP	Micro Commercial Co	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -	Package: DO-204AL, DO-41, Axial	Stock3,072	400V	1A (DC)	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-
VS-HFA08SD60SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock12,840	600V	8A (DC)	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-55°C ~ 150°C
RS1PJHE3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-220AA	Stock6,384	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
MPG06GHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	Package: MPG06, Axial	Stock6,112	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
MBRB7H45-E3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 630mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,720	45V	7.5A	630mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
MBR735	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 7.5A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2	Stock560,400	35V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
D820N26T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 2000V 1273A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock5,360	-	-	-	-	-	-	-	-	-	-	-
VI20120S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 120V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.12V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,344	120V	20A	1.12V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 120V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
UF4003 R1G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 200V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock2,560	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAT43-TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 125°C (Max)	Package: DO-204AH, DO-35, Axial	Stock2,400	30V	200mA (DC)	450mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	125°C (Max)
GI752-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	Package: P600, Axial	Stock7,712	200V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 200V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
RF505BM6STL	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,704	600V	5A	1.7V @ 5A	Standard Recovery >500ns, > 200mA (Io)	30ns	10µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	150°C (Max)
GI751-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	Package: P600, Axial	Stock4,896	100V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 100V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
RB160M-50TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 30V Capacitance @ Vr, F: 170pF @ 1V, 1MHz Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	Package: -	Stock3,488	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	170pF @ 1V, 1MHz	-	-	-	150°C (Max)
SDM02U30CSP-7	Diodes Incorporated	DIODE SCHOTTKY X3-WLB0603-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 9pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: X3-WLB0603-2 Operating Temperature - Junction: -55°C ~ 150°C	Package: 2-SMD, No Lead	Stock89,610	30V	200mA	500mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	9pF @ 0.5V, 1MHz	Surface Mount	2-SMD, No Lead	X3-WLB0603-2	-55°C ~ 150°C
MUR4100ERLG	ON Semiconductor	DIODE GEN PURP 1KV 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AA, DO-27, Axial	Stock2,003,352	1000V	4A	1.85V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	25µA @ 1000V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
STPS1H100U	STMicroelectronics	DIODE SCHOTTKY 100V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: 175°C (Max)	Package: DO-214AA, SMB	Stock690,240	100V	1A	770mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	4µA @ 100V	-	Surface Mount	DO-214AA, SMB	SMB	175°C (Max)
MSASC25H30KS-TR	Microchip Technology	DIODE POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
FES1GE	Diodes Incorporated	DIODE GEN PURP 400V 1A F1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AA Supplier Device Package: F1A (DO219AA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock7,329	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 400 V	14pF @ 4V, 1MHz	Surface Mount	DO-219AA	F1A (DO219AA)	-55°C ~ 150°C
1N5416-TR	Microchip Technology	DIODE GEN PURP 100V 3A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
RBLQ2MM10TFTR	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 2A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 175°C	Package: -	Request a Quote	100 V	2A	770 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 100 V	50pF @ 4V, 1MHz	Surface Mount	SOD-123F	PMDU	175°C
SK24HE3-LTP	Micro Commercial Co	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 230pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock2,838	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	230pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
MUR260K_AY_00001	Panjit International Inc.	DIODE GEN PURP 600V 2A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	600 V	2A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 175°C
SK310SMA-3G	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	100 V	3A	790 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-50°C ~ 150°C
VS-E5TX3006THN3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 41 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,422	600 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	41 ns	20 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SF61G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 6A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	6A	975 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SBM345VMS_AY_00001	Panjit International Inc.	DIODE SCHOTTKY 45V 3A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	3A	470 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 45 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
RS1GLW	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock59,739	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
RKR0503AKH-P1	Renesas Electronics Corporation	RECTIFIER DIODE, SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SR10100L-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: 700pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	10A	750 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	700pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

1N4004-N-2-2-BP

Micro Commercial Co

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -

Package: DO-204AL, DO-41, Axial

Stock3,072

400V

1A (DC)

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-

VS-HFA08SD60SPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock12,840

600V

8A (DC)

1.7V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

55ns

5µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-55°C ~ 150°C

RS1PJHE3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

Package: DO-220AA

Stock6,384

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

1µA @ 600V

9pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

MPG06GHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

Package: MPG06, Axial

Stock6,112

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

600ns

5µA @ 400V

10pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

MBRB7H45-E3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,720

45V

7.5A

630mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

MBR735

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

Package: TO-220-2

Stock560,400

35V

7.5A

840mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

D820N26T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 2000V 1273A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Stock5,360

-

VI20120S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 120V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.12V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 150°C

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,344

120V

20A

1.12V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 120V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-40°C ~ 150°C

UF4003 R1G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 200V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

Package: DO-204AL, DO-41, Axial

Stock2,560

200V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

BAT43-TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 125°C (Max)

Package: DO-204AH, DO-35, Axial

Stock2,400

30V

200mA (DC)

450mV @ 15mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

7pF @ 1V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

125°C (Max)

GI752-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

Package: P600, Axial

Stock7,712

200V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 200V

150pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-50°C ~ 150°C

RF505BM6STL

Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,704

600V

5A

1.7V @ 5A

Standard Recovery >500ns, > 200mA (Io)

30ns

10µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

150°C (Max)

GI751-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 6A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

Package: P600, Axial

Stock4,896

100V

6A

900mV @ 6A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

5µA @ 100V

150pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-50°C ~ 150°C

RB160M-50TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 30V
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: 150°C (Max)

Package: -

Stock3,488

30V

1A

360mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 30V

170pF @ 1V, 1MHz

-

150°C (Max)

SDM02U30CSP-7

Diodes Incorporated

DIODE SCHOTTKY X3-WLB0603-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 9pF @ 0.5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: X3-WLB0603-2
Operating Temperature - Junction: -55°C ~ 150°C

Package: 2-SMD, No Lead

Stock89,610

30V

200mA

500mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 30V

9pF @ 0.5V, 1MHz

Surface Mount

2-SMD, No Lead

X3-WLB0603-2

-55°C ~ 150°C

MUR4100ERLG

ON Semiconductor

DIODE GEN PURP 1KV 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

Package: DO-201AA, DO-27, Axial

Stock2,003,352

1000V

4A

1.85V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

25µA @ 1000V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 175°C

STPS1H100U

STMicroelectronics

DIODE SCHOTTKY 100V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)

Package: DO-214AA, SMB

Stock690,240

100V

1A

770mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

4µA @ 100V

-

Surface Mount

DO-214AA, SMB

SMB

175°C (Max)

MSASC25H30KS-TR

Microchip Technology

DIODE POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Request a Quote

-

FES1GE

Diodes Incorporated

DIODE GEN PURP 400V 1A F1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AA
Supplier Device Package: F1A (DO219AA)
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Stock7,329

400 V

1A

1.25 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 400 V

14pF @ 4V, 1MHz

Surface Mount

DO-219AA

F1A (DO219AA)

-55°C ~ 150°C

1N5416-TR

Microchip Technology

DIODE GEN PURP 100V 3A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

Package: -

Request a Quote

100 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 100 V

-

Through Hole

B, Axial

-65°C ~ 175°C

RBLQ2MM10TFTR

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 2A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 175°C

Package: -

Request a Quote

100 V

2A

770 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 100 V

50pF @ 4V, 1MHz

Surface Mount

SOD-123F

PMDU

175°C

SK24HE3-LTP

Micro Commercial Co

DIODE SCHOTTKY 40V 2A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

Package: -

Stock2,838

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

230pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

MUR260K_AY_00001

Panjit International Inc.

DIODE GEN PURP 600V 2A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C

Package: -

Request a Quote

600 V

2A

1.35 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 600 V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 175°C

SK310SMA-3G

Diotec Semiconductor

IC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C

Package: -

Request a Quote

100 V

3A

790 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 µA @ 100 V

-

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-50°C ~ 150°C

VS-E5TX3006THN3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

Package: -

Stock1,422

600 V

30A

2.1 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

41 ns

20 µA @ 600 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

SF61G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 6A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Request a Quote

50 V

6A

975 mV @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SBM345VMS_AY_00001

Panjit International Inc.

DIODE SCHOTTKY 45V 3A DO15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Request a Quote

45 V

3A

470 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

60 µA @ 45 V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

RS1GLW

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD123W

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C

Package: -

Stock59,739

400 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

-

Surface Mount

SOD-123W

-55°C ~ 175°C

RKR0503AKH-P1

Renesas Electronics Corporation

RECTIFIER DIODE, SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Request a Quote

-

SR10100L-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Capacitance @ Vr, F: 700pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Request a Quote

100 V

10A

750 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 100 V

700pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C