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Micro Commercial Co |
DIODE GEN PURP 50V 1A A-405
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: Axial, Radial Bend
- Supplier Device Package: A-405
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Axial, Radial Bend |
Stock6,128 |
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50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | Axial, Radial Bend | A-405 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 100V 1A SOD123H
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123H
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123H |
Stock3,296 |
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100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123H | SOD-123H | -55°C ~ 150°C |
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Powerex Inc. |
DIODE GEN PURP 600V 450A DO200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 450A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 11µs
- Current - Reverse Leakage @ Vr: 50mA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-200AA, A-PUK |
Stock7,856 |
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600V | 450A | 1.6V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 11µs | 50mA @ 600V | - | Chassis, Stud Mount | DO-200AA, A-PUK | DO-200AA, R62 | -65°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 190µA @ 650V
- Capacitance @ Vr, F: 360pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock6,480 |
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650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 80V TO-263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,504 |
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80V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 80V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 6
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock4,352 |
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60V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 2A 2DSN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 480mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: 2-DSN (1.6x.80)
- Operating Temperature - Junction: 150°C (Max)
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Package: 2-XDFN |
Stock3,568 |
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30V | 2A (DC) | 480mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | - | Surface Mount | 2-XDFN | 2-DSN (1.6x.80) | 150°C (Max) |
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TSC America Inc. |
DIODE, SUPER FAST, 2A, 400V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock4,800 |
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400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 400V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 0.8A, 800V, 500NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock3,472 |
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800V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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ON Semiconductor |
DIODE STD REC SOT23
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock115,380 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 300MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock2,032 |
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100V | 300mA | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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IXYS |
DIODE MODULE 2.2KV 560A Y1-CU
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 560A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1200A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30mA @ 2200V
- Capacitance @ Vr, F: 576pF @ 700V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
- Supplier Device Package: Y1-CU
- Operating Temperature - Junction: -
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Package: Y1-CU |
Stock5,072 |
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2200V | 560A | 1.3V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 2200V | 576pF @ 700V, 1MHz | Chassis Mount | Y1-CU | Y1-CU | - |
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IXYS |
DIODE GEN PURP 1.2KV 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 1200V
- Capacitance @ Vr, F: 10pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock51,030 |
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1200V | 30A | 1.29V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 1200V | 10pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -40°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 30MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 30mA
- Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 30V
- Capacitance @ Vr, F: 2pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-90, SOD-323F |
Stock5,955,360 |
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30V | 30mA | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 30V | 2pF @ 1V, 1MHz | Surface Mount | SC-90, SOD-323F | UMD2 | 125°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 2A PMDU
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock16,365 |
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40 V | 2A | 550 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 40 V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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40 V | 5A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 125°C |
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Panjit International Inc. |
DIODE GEN PURP 1.7KV 1.5A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 1700 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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1700 V | 1.5A | 2.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 1700 V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 30V 100MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 25 V
- Capacitance @ Vr, F: 7pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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30 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 25 V | 7pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 200V 1.6A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1.6A
- Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 200 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
|
200 V | 1.6A | 760 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 200 V | 90pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -40°C ~ 175°C |
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Comchip Technology |
DIODE GP 1KV 3A SMB/DO-214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB/DO-214AA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
1000 V | 3A | 1.68 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | - | Surface Mount | DO-214AA, SMB | SMB/DO-214AA | -55°C ~ 150°C |
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Rohm Semiconductor |
200V 5A, TO-252, ULTRA LOW IR SB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 nA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252GE
- Operating Temperature - Junction: 175°C
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Package: - |
Stock5,070 |
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200 V | 5A | 920 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 nA @ 200 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252GE | 175°C |
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Micro Commercial Co |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
800 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 800 V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 40V 1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: 52pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Stock258,180 |
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40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | 52pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Solid State Inc. |
DIODE GEN PURP 800V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 190°C
|
Package: - |
Request a Quote |
|
800 V | 12A | 1 V @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 500 µA @ 800 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 190°C |
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Microchip Technology |
DIODE GP 100V 3A SQ-MELF B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Microchip Technology |
UFR,FRR
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Vishay |
FREDS - TO-247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 75 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 57 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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600 V | 75A | 1.7 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 57 ns | 25 µA @ 600 V | - | Through Hole | TO-247-3 | TO-247AD | -55°C ~ 175°C |
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onsemi |
DIODE SCHOTTKY 60V 4A SMA-FL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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