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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-220AA |
Stock7,568 |
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30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 2A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 90V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-220AA |
Stock140,472 |
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90V | 2A | 800mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 90V | 65pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock2,624 |
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200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE STD REC 300A DO-9
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 2500V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 1.46V @ 942A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: DO-205AB, DO-9, Stud |
Stock7,664 |
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2500V | 300A | 1.46V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
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Powerex Inc. |
DIODE GEN PURP 1.4KV 100A DO205
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 7mA @ 1400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock3,504 |
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1400V | 100A | 1.5V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 7mA @ 1400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 150A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.47V @ 600A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: DO-205AA, DO-8, Stud |
Stock7,168 |
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600V | 150A | 1.47V @ 600A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE STD REC 85A DO-5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 180°C
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Package: DO-203AB, DO-5, Stud |
Stock5,040 |
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1400V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 100V TO-220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 350µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-3 |
Stock2,100 |
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100V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A SMA
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock6,784 |
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400V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 400V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 8pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock7,744 |
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400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 8pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURPOSE 400V DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-204AC, DO-15, Axial |
Stock2,576 |
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400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-41 | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: T-18, Axial |
Stock5,280 |
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40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, 1A, 50V, DO-204AL (DO-41)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock4,576 |
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50V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 100V 3A POWERDI5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 760mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: PowerDI? 5
- Supplier Device Package: PowerDI? 5
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: PowerDI? 5 |
Stock1,024,164 |
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100V | 3A | 760mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | PowerDI? 5 | PowerDI? 5 | -65°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 1KV 3A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AA, SMB |
Stock1,800,168 |
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1000V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 8pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-214AC, SMA |
Stock18,727,056 |
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600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 8pF @ 0V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | 150°C (Max) |
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NTE Electronics, Inc |
DIODE GEN PURP 100V 6A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 19 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12 mA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 6A | 1.1 V @ 19 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 100 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE GENERAL PURPOSE SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
5A, 800V, STANDARD RECOVERY RECT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock18,000 |
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800 V | 5A | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 800 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Diotec Semiconductor |
SCHOTTKY SOD323P 40V 1A 150C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 520 mV @ 700 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 5 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
Request a Quote |
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40 V | 1A | 520 mV @ 700 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 5 V | 30pF @ 4V, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323 | -40°C ~ 125°C |
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Rohm Semiconductor |
TRENCH MOS STRUCTURE, 100V, 20A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263L
- Operating Temperature - Junction: 150°C
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Package: - |
Stock3,000 |
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100 V | 20A | 860 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 100 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263L | 150°C |
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Taiwan Semiconductor Corporation |
3A, 60V, TRENCH SCHOTTKY
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
60 V | 3A | 600 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 800MA SUB SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock82,998 |
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1000 V | 800mA | 1.3 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 75V 200MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
75 V | 200mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Nexperia USA Inc. |
PMEG3020CER/SOD123W/SOD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 520 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5.5 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: 145pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: 175°C
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Package: - |
Stock9,000 |
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30 V | 2A | 520 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 5.5 ns | 50 µA @ 30 V | 145pF @ 1V, 1MHz | Surface Mount | SOD-123W | SOD-123W | 175°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: DO-221AC (SMA-FL)
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
1000 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 50pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SMA-FL) | -50°C ~ 150°C |
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SMC Diode Solutions |
DIODE SIL CARB 650V 15A TO220AC
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 650 V
- Capacitance @ Vr, F: 1290pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC (TO-220-2)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock750 |
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650 V | 15A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 1290pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC (TO-220-2) | -55°C ~ 175°C |
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Harris Corporation |
DIODE AVALANCHE 900V 30A TO220AC
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 900 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 500 µA @ 900 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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900 V | 30A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 µA @ 900 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |