Page 1033 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RL107-N-2-3-AP
Micro Commercial Co

DIODE GEN PURP 1KV 1A A-405

Package: Axial, Radial Bend

Stock3,040
JANTXV1N5621US
Microsemi Corporation

DIODE GEN PURP 800V 1A D5A

Package: SQ-MELF, A

Stock7,520
VS-SD823C25S20C
Vishay Semiconductor Diodes Division

DIODE MODULE 2.5KV 810A B-43

Package: B-43, PUK

Stock7,936
VS-HFA90NH40PBF
Vishay Semiconductor Diodes Division

DIODE MODULE 400V 210A D-67

Package: D-67 HALF-PAK

Stock6,640
NRVUB1620CTT4G
ON Semiconductor

DIODE ULT FAST 200V 16A D2PAK-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,024
VS-8EWS16STRL-M3
Vishay Semiconductor Diodes Division

DIODE RECTIFIER 1600V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,880
UFS115JE3/TR13
Microsemi Corporation

DIODE GEN PURP 150V 1A DO214BA

Package: DO-214AA, SMB

Stock5,968
V10PM12-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.9A TO277A

Package: TO-277, 3-PowerDFN

Stock348,000
B370Q-13-F
Diodes Incorporated

DIODE SCHOTTKY 70V 3A SMC

Package: DO-214AB, SMC

Stock3,696
SS5P6HM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5A TO277A

Package: TO-277, 3-PowerDFN

Stock2,448
ES2A-M3/52T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A DO214AA

Package: DO-214AA, SMB

Stock5,840
SE20AFB-M3/6B
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.3A DO221AC

Package: DO-221AC, SMA Flat Leads

Stock4,608
SDURF1060
SMC Diode Solutions

DIODE GEN PURP 600V ITO220AC

Package: TO-220-2 Full Pack, Isolated Tab

Stock8,004
MBRA130LT3G
ON Semiconductor

DIODE SCHOTTKY 30V 1A SMA

Package: DO-214AC, SMA

Stock4,176,432
VS-65APF06LHM3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 65A TO247AD

Package: -

Stock243
FS1BH
Good-Ark Semiconductor

RECTIFIER, SCHOTTKY, LOW VF, 1A,

Package: -

Stock16,248
SMBT1357LT1
onsemi

SS SOT23 GP XSTR SPCL TR

Package: -

Request a Quote
ER3B_R1_00001
Panjit International Inc.

DIODE GEN PURP 100V 3A SMC

Package: -

Request a Quote
HS1AFL
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A SOD123F

Package: -

Stock101,583
SK19
SMC Diode Solutions

DIODE SCHOTTKY 90V 1A SMB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RL107-N-2-3-AP	Micro Commercial Co	DIODE GEN PURP 1KV 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial, Radial Bend Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	Package: Axial, Radial Bend	Stock3,040	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	Axial, Radial Bend	A-405	-55°C ~ 150°C
JANTXV1N5621US	Microsemi Corporation	DIODE GEN PURP 800V 1A D5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: 20pF @ 12V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	Package: SQ-MELF, A	Stock7,520	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	20pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
VS-SD823C25S20C	Vishay Semiconductor Diodes Division	DIODE MODULE 2.5KV 810A B-43 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500V Current - Average Rectified (Io): 810A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 2500V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: B-43, PUK Supplier Device Package: B-43, Hockey PUK Operating Temperature - Junction: -	Package: B-43, PUK	Stock7,936	2500V	810A	2.2V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 2500V	-	Stud Mount	B-43, PUK	B-43, Hockey PUK	-
VS-HFA90NH40PBF	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 210A D-67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 210A Voltage - Forward (Vf) (Max) @ If: 1.67V @ 180A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 2mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -55°C ~ 150°C	Package: D-67 HALF-PAK	Stock6,640	400V	210A	1.67V @ 180A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	2mA @ 400V	-	Chassis Mount	D-67 HALF-PAK	HALF-PAK	-55°C ~ 150°C
NRVUB1620CTT4G	ON Semiconductor	DIODE ULT FAST 200V 16A D2PAK-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK-3 Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,024	200V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK-3	-65°C ~ 175°C
VS-8EWS16STRL-M3	Vishay Semiconductor Diodes Division	DIODE RECTIFIER 1600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,880	1600V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-55°C ~ 150°C
UFS115JE3/TR13	Microsemi Corporation	DIODE GEN PURP 150V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AA, SMB	Stock5,968	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214BA	-55°C ~ 175°C
V10PM12-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 3.9A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock348,000	120V	3.9A	830mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
B370Q-13-F	Diodes Incorporated	DIODE SCHOTTKY 70V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 70V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock3,696	70V	3A	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 70V	100pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 125°C
SS5P6HM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock2,448	60V	5A	690mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	200pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
ES2A-M3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock5,840	50V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 50V	18pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SE20AFB-M3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1.3A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-221AC, SMA Flat Leads	Stock4,608	100V	1.3A (DC)	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	5µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 175°C
SDURF1060	SMC Diode Solutions	DIODE GEN PURP 600V ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 32ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack, Isolated Tab	Stock8,004	600V	-	2.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	10µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
MBRA130LT3G	ON Semiconductor	DIODE SCHOTTKY 30V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 410mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AC, SMA	Stock4,176,432	30V	1A	410mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 125°C
VS-65APF06LHM3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 65A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 65A Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 65 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock243	600 V	65A	1.32 V @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	Through Hole	TO-3P-3, SC-65-3	TO-247AD (TO-3P)	-40°C ~ 150°C
FS1BH	Good-Ark Semiconductor	RECTIFIER, SCHOTTKY, LOW VF, 1A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 810 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: eSGA (SOD-123FL) Operating Temperature - Junction: 150°C	Package: -	Stock16,248	100 V	1A	810 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	-	Surface Mount	SOD-123F	eSGA (SOD-123FL)	150°C
SMBT1357LT1	onsemi	SS SOT23 GP XSTR SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
ER3B_R1_00001	Panjit International Inc.	DIODE GEN PURP 100V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 100 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
HS1AFL	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock101,583	50 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 50 V	11pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
SK19	SMC Diode Solutions	DIODE SCHOTTKY 90V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 90 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	90 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 90 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 125°C
SL14	SMC Diode Solutions	40V, 1A, SMA, DIODE SCHOTTKY Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Stock14,595	40 V	1A	400 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 125°C
FESB8ATHE3_A-P	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 50V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 85pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	8A	950 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 50 V	85pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
ES1AH	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N5399S_HF	Diodes Incorporated	STANDARD RECOVERY RECTIFIER DO-4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1 kV Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1 kV	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N4245US	Microchip Technology	DIODE GEN PURP 200V 1A MELF-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF Supplier Device Package: MELF-1 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 200 V	-	Surface Mount	SQ-MELF	MELF-1	-65°C ~ 175°C
SR315	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	150 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS34L	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock100,266	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
DD600	Diotec Semiconductor	HV DIODE D2.5X6.5 6000V 150NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6000 V Current - Average Rectified (Io): 20mA Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 6000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	6000 V	20mA	40 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	150 ns	5 µA @ 6000 V	-	Through Hole	Axial	Axial	-50°C ~ 150°C