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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 1A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 590mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-220AA |
Stock2,272 |
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50V | 1A | 590mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock4,032 |
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1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 8A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock36,648 |
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30V | 8A | 570mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 50V 2A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 2µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AC, SMA |
Stock94,680 |
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50V | 2A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 50V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,216 |
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30V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 90V 3A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 90V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AB, SMC |
Stock2,816 |
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90V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 90V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN REV 200V 150A DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 9.5mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -60°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock7,456 |
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200V | 150A | 1.5V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 9.5mA @ 200V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -60°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE HYPERFAST 30A TO-247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 26ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC Modified
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-247-2 |
Stock5,584 |
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600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SUPER FAST, 16A, 600V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,304 |
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600V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock5,296 |
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150V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, 3A, 600V, DO-201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock7,456 |
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600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE RECT 2A 200V DO-214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: 16pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock3,264 |
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200V | 2A (DC) | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, 1A, 400V, DO-214AA (SMB)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock2,112 |
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400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock2,640 |
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400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, 1A, 800V, AEC-Q101, DO-20
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock3,472 |
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800V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 2A PMDS
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: PMDS
- Operating Temperature - Junction: 125°C (Max)
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Package: DO-214AC, SMA |
Stock336,360 |
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40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 70V 100MA SOD523
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-79, SOD-523 |
Stock364,800 |
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70V | 100mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | 125°C (Max) |
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Microchip Technology |
DIODE GEN PURP 135V 1A D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 135 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 125 V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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135 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 125 V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 150V 15A TO257
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 800 mV
- Capacitance @ Vr, F: 300pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-257-3
- Supplier Device Package: TO-257
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 15A | 1.15 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 800 mV | 300pF @ 5V, 1MHz | Through Hole | TO-257-3 | TO-257 | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 400V 12A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 12A | 1.1 V @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | 100pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
20A, 600V, "H" SERIES GEN 5 FRED
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 47 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock2,538 |
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600 V | 20A | 1.68 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 47 ns | 10 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 175°C |
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Diotec Semiconductor |
DIODE SCHOT 100V 1A MELF DO213AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: MELF DO-213AB (Plastic)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Stock9,618 |
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100 V | 1A | 790 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | - | Surface Mount | DO-213AB, MELF | MELF DO-213AB (Plastic) | -50°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 100V 10A SLIMDPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.6 µs
- Current - Reverse Leakage @ Vr: 20 µA @ 100 V
- Capacitance @ Vr, F: 78pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: SlimDPAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
|
100 V | 10A | 1.14 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | 2.6 µs | 20 µA @ 100 V | 78pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | SlimDPAK | -55°C ~ 175°C |
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Vishay |
12A, 100V, SMPC TRENCH SKY RECT.
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 640 mV @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 680 µA @ 100 V
- Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock19,500 |
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100 V | 12A | 640 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 680 µA @ 100 V | 1900pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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onsemi |
SIC DIODE GEN2.0 1200V TO247-2L
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 38A
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1.2 kV
- Capacitance @ Vr, F: 1961pF @ 1V, 100kHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1200 V | 38A | 1.75 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1.2 kV | 1961pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 500MA UMD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 560 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 125°C (Max)
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Package: - |
Stock352,011 |
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40 V | 500mA | 560 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 40 V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 700MA US-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 700mA
- Voltage - Forward (Vf) (Max) @ If: 520 mV @ 700 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: 45pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: US-FLAT (1.25x2.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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40 V | 700mA | 520 mV @ 700 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 45pF @ 10V, 1MHz | Surface Mount | SC-76, SOD-323 | US-FLAT (1.25x2.5) | -40°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GP 600V 2.7A SLIMDPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 2.7A
- Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.6 µs
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: 78pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: SlimDPAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock14,400 |
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600 V | 2.7A | 1.14 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | 2.6 µs | 20 µA @ 600 V | 78pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | SlimDPAK | -55°C ~ 175°C |