|
|
Global Power Technologies Group |
DIODE SCHOTT 1.2KV 60A TO247-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 60A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Capacitance @ Vr, F: 3581pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 135°C
|
Package: TO-247-2 |
Stock3,552 |
|
1200V | 60A (DC) | 1.7V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3581pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A P600
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P600
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: P600, Axial |
Stock2,736 |
|
400V | 3A | 1.8V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Through Hole | P600, Axial | P600 | -55°C ~ 150°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 250V 40A TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 30µA @ 250V
- Capacitance @ Vr, F: 500pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-220-3 |
Stock4,176 |
|
250V | 40A | 970mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 30µA @ 250V | 500pF @ 5V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-214AA, SMB |
Stock360,816 |
|
100V | 1A | 780mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 175°C |
|
|
Semtech Corporation |
DIODE GEN PURP 150V 15A MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: Module
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: Module |
Stock3,360 |
|
150V | 15A | 1.1V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | - | Chassis, Stud Mount | Module | - | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE MODULE 1.6KV 350A D200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 350A
- Voltage - Forward (Vf) (Max) @ If: 2.26V @ 1100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 35mA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, PUK
- Operating Temperature - Junction: -
|
Package: DO-200AA, A-PUK |
Stock3,216 |
|
1600V | 350A | 2.26V @ 1100A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 35mA @ 1600V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, PUK | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 15A D2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800µA @ 60V
- Capacitance @ Vr, F: 720pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,448 |
|
60V | 15A | 620mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 60V | 720pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 15A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 18ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220F
- Operating Temperature - Junction: 175°C (Max)
|
Package: TO-220-2 Full Pack, Isolated Tab |
Stock5,216 |
|
600V | 15A | 3.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | 175°C (Max) |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5.5A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 5.5A
- Voltage - Forward (Vf) (Max) @ If: 590mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: TO-277, 3-PowerDFN |
Stock3,088 |
|
50V | 5.5A | 590mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-220-2 |
Stock8,604 |
|
800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
Sanken |
DIODE GEN PURP 1KV 1.2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: Axial |
Stock2,608 |
|
1000V | 1.2A | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE RECT 4A 400V 50NS DO-201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-201AD, Axial |
Stock3,680 |
|
400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
|
|
Microsemi Corporation |
DIODE GEN PURP 200V 3A D5B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: E-MELF
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: E-MELF |
Stock6,096 |
|
200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 16A TO263AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 32ns
- Current - Reverse Leakage @ Vr: 15µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
- Supplier Device Package: TO-263AC (SMPD)
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab) Variant |
Stock3,296 |
|
200V | 16A | 1V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 15µA @ 200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -40°C ~ 150°C |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 60V 2A PMDS
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 75µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: PMDS
- Operating Temperature - Junction: 150°C (Max)
|
Package: DO-214AC, SMA |
Stock4,256 |
|
60V | 2A | 650mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 75µA @ 60V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 70V 70MA SOD882
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: SOD-882
- Operating Temperature - Junction: 125°C (Max)
|
Package: SOD-882 |
Stock2,896 |
|
70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 50V | - | Surface Mount | SOD-882 | SOD-882 | 125°C (Max) |
|
|
Micro Commercial Co |
DIODE GEN PURP 1KV 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: DO-214AC, SMA |
Stock2,336 |
|
1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 150°C |
|
|
ON Semiconductor |
DIODE GEN PURP 75V 200MA SOD523
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: SC-79, SOD-523 |
Stock254,298 |
|
75V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -55°C ~ 150°C |
|
|
Micro Commercial Co |
DIODE SCHOTTKY 20V 500MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 20V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -65°C ~ 125°C
|
Package: SOD-123 |
Stock223,884 |
|
20V | 500mA | 450mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 30pF @ 4V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 125°C |
|
|
Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 200°C
|
Package: - |
Request a Quote |
|
45 V | 20A | 530 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 200°C |
|
|
Microchip Technology |
DIODE SCHOTTKY 45V 150A THINKEY3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 760 mV @ 150 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: ThinKey™3
- Supplier Device Package: ThinKey™3
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
45 V | 150A | 760 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | - | Surface Mount | ThinKey™3 | ThinKey™3 | -55°C ~ 150°C |
|
|
Panjit International Inc. |
DIODE SCHOTTKY 60V 6A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
60 V | 6A | 750 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
|
Panjit International Inc. |
DIODE SCHOTTKY 100V 6A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
100 V | 6A | 800 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
|
|
Infineon Technologies |
DIODE GP 600V 30A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
600 V | 30A | 1.25 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
SMC Diode Solutions |
400V, 2A, DO-15, ULTRA FAST RECO
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock6,900 |
|
400 V | 2A | 1.25 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 30pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
|
|
Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
|
|
onsemi |
DIODE SCHOTTKY 100V 3A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 995 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 14.3pF @ 100V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
100 V | 3A | 995 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 100 V | 14.3pF @ 100V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 175°C |
|
|
MDD |
DIODE SCHOTTKY 150V 1A SOD123FL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|
150 V | 1A | 850 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | 80pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 125°C |