Page 132 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

CR3F-040 BK
Central Semiconductor Corp

DIODE GEN PURP 400V 3A DO201AD

Package: DO-201AD, Axial

Stock7,808
VS-30WQ03FNTRLPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,872
R7S00608XX
Powerex Inc.

DIODE MODULE 600V 800A DO200AA

Package: DO-200AA, A-PUK

Stock5,968
MBR6040
GeneSiC Semiconductor

DIODE SCHOTTKY 40V 60A DO5

Package: DO-203AB, DO-5, Stud

Stock4,288
1N5187US
Microsemi Corporation

DIODE GEN PURP 200V 3A AXIAL

Package: B, Axial

Stock4,128
STPS3045DJFY-TR
STMicroelectronics

AUTOMOTIVE POWER SCHOTTKY RECTIF

Package: 8-PowerVDFN

Stock5,520
VS-6EWH06FNTRHM3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,632
ES3G M6G
TSC America Inc.

DIODE, SUPER FAST, 3A, 400V, 35N

Package: DO-214AB, SMC

Stock3,248
ESH2DHE3_A/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Package: DO-214AA, SMB

Stock3,248
FR155GHB0G
TSC America Inc.

DIODE, FAST, 1.5A, 600V, 250NS,

Package: DO-204AC, DO-15, Axial

Stock5,136
1N4006TA
SMC Diode Solutions

DIODE GEN PURP 800V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock2,048
RL103FTA
SMC Diode Solutions

DIODE GEN PURP 200V 1A A-405

Package: Axial

Stock6,368
JANTX1N3671A
Microsemi Corporation

DIODE GEN PURP 800V 12A DO203AA

Package: DO-203AA, DO-4, Stud

Stock6,640
ACGRBT303-HF
Comchip Technology

DIODE GEN PURP 600V 3A 2114

Package: 2-SMD, No Lead

Stock5,248
SB2100E-G
Comchip Technology

DIODE SCHOTTKY 100V 2A DO15

Package: DO-204AC, DO-15, Axial

Stock4,256
RURG8050
Harris Corporation

DIODE AVALANCHE 500V 80A TO247-2

Package: -

Request a Quote
NTE5881
NTE Electronics, Inc

DIODE GEN PURP 500V 12A DO4

Package: -

Request a Quote
1N2273R
Solid State Inc.

DIODE GEN PURP REV 100V 40A DO5

Package: -

Request a Quote
R307060F
Microchip Technology

STD RECTIFIER

Package: -

Request a Quote
VSSAF3L63HM3-H
Vishay General Semiconductor - Diodes Division

3A, 60V SLIMSMA TRENCH SKY RECT.

Package: -

Stock21,000

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CR3F-040 BK	Central Semiconductor Corp	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-201AD, Axial	Stock7,808	400V	3A	1.2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
VS-30WQ03FNTRLPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 30V Capacitance @ Vr, F: 290pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,872	30V	3.5A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 30V	290pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
R7S00608XX	Powerex Inc.	DIODE MODULE 600V 800A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 800A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 10µs Current - Reverse Leakage @ Vr: 50mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	Package: DO-200AA, A-PUK	Stock5,968	600V	800A	1.8V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	10µs	50mA @ 600V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
MBR6040	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 60A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock4,288	40V	60A	650mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
1N5187US	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: B, Axial	Stock4,128	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	2µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
STPS3045DJFY-TR	STMicroelectronics	AUTOMOTIVE POWER SCHOTTKY RECTIF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 680mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6) Operating Temperature - Junction: -40°C ~ 175°C	Package: 8-PowerVDFN	Stock5,520	45V	30A	680mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)	-40°C ~ 175°C
VS-6EWH06FNTRHM3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 600V 6A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,632	600V	6A	2.1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
ES3G M6G	TSC America Inc.	DIODE, SUPER FAST, 3A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock3,248	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
ESH2DHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AA, SMB	Stock3,248	200V	2A	930mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
FR155GHB0G	TSC America Inc.	DIODE, FAST, 1.5A, 600V, 250NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock5,136	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N4006TA	SMC Diode Solutions	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-204AL, DO-41, Axial	Stock2,048	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
RL103FTA	SMC Diode Solutions	DIODE GEN PURP 200V 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A-405 Operating Temperature - Junction: -65°C ~ 150°C	Package: Axial	Stock6,368	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	Axial	A-405	-65°C ~ 150°C
JANTX1N3671A	Microsemi Corporation	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock6,640	800V	12A	2.3V @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 800V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
ACGRBT303-HF	Comchip Technology	DIODE GEN PURP 600V 3A 2114 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 23pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2114/DO-214AA Operating Temperature - Junction: -65°C ~ 175°C	Package: 2-SMD, No Lead	Stock5,248	600V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 600V	23pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2114/DO-214AA	-65°C ~ 175°C
SB2100E-G	Comchip Technology	DIODE SCHOTTKY 100V 2A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock4,256	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
RURG8050	Harris Corporation	DIODE AVALANCHE 500V 80A TO247-2 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 80 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Current - Reverse Leakage @ Vr: 500 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	500 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	500 µA @ 500 V	-	Through Hole	TO-247-2	TO-247-2	-65°C ~ 175°C
NTE5881	NTE Electronics, Inc	DIODE GEN PURP 500V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 38 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	500 V	12A	1.26 V @ 38 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 500 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
1N2273R	Solid State Inc.	DIODE GEN PURP REV 100V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	100 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
R307060F	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
VSSAF3L63HM3-H	Vishay General Semiconductor - Diodes Division	3A, 60V SLIMSMA TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 µA @ 60 V Capacitance @ Vr, F: 680pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock21,000	60 V	2.5A	540 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 60 V	680pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 150°C
S3540	Microchip Technology	DIODE GEN PURP 400V DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 25 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	400 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	25 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 200°C
RB501VM-40FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 10 V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	Package: -	Request a Quote	40 V	100mA	550 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	30 µA @ 10 V	6pF @ 10V, 1MHz	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
JANHCB2N5415	Microchip Technology	BJT TRANSISTOR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
HSL226KRF-E	Renesas Electronics Corporation	DIODE SCHOTTKY 25V 50MA 2EFP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 25 V Current - Average Rectified (Io): 50mA Voltage - Forward (Vf) (Max) @ If: 380 mV @ 5 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 450 nA @ 20 V Capacitance @ Vr, F: 2.8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: 2-EFP Operating Temperature - Junction: 125°C (Max)	Package: -	Request a Quote	25 V	50mA	380 mV @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	450 nA @ 20 V	2.8pF @ 1V, 1MHz	Surface Mount	2-SMD, Flat Lead	2-EFP	125°C (Max)
SS36-V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 3A 60V DO-214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
PMEG2020EJ-ZL-115	Nexperia USA Inc.	NEXPERIA PMEG2020EJ - RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
R1800-TP	Micro Commercial Co	DIODE GEN PURP 1.8KV 500MA DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1800 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1800 V	500mA	2 V @ 500 mA	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1800 V	30pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
WNSC2D10650XQ	WeEn Semiconductors	DIODE SIL CARB 650V 10A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 310pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C	Package: -	Request a Quote	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C