Page 133 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

JANTX1N6510
Microsemi Corporation

DIODE GEN PURP 75V 300MA DO213

Package: 16-CFlatPack

Stock2,544
CDLL0.2A20
Microsemi Corporation

DIODE SCHOTTKY 20V 200MA DO213AA

Package: DO-213AA

Stock3,280
RDS82280XX
Powerex Inc.

DIODE MODULE 2.2KV 8000A DO200AE

Package: DO-200AE

Stock6,800
R6030835ESYA
Powerex Inc.

DIODE GEN PURP 800V 350A DO205AB

Package: DO-205AB, DO-9, Stud

Stock3,344
JANTX1N6628US
Microsemi Corporation

DIODE GEN PURP 660V 1.75A D5B

Package: SQ-MELF, E

Stock7,376
UFS530J/TR13
Microsemi Corporation

DIODE GEN PURP 300V 5A DO214AB

Package: DO-214AB, SMC

Stock4,256
SURD8330T4G-VF01
ON Semiconductor

DIODE GEN PURP 300V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,792
UGF8DTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A ITO220AC

Package: TO-220-2 Full Pack, Isolated Tab

Stock4,208
BYV98-100-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 4A SOD64

Package: SOD-64, Axial

Stock3,232
DSS2-60AT2
IXYS

DIODE SCHOTTKY 60V 2A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,528
1N5407GHA0G
TSC America Inc.

DIODE, 3A, 800V, AEC-Q101, DO-20

Package: DO-201AD, Axial

Stock7,760
SD103AWS-HE3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 350MA 40V SOD323

Package: SC-76, SOD-323

Stock5,072
F1T2G A0G
TSC America Inc.

DIODE, FAST, 1A, 100V, 150NS, TS

Package: T-18, Axial

Stock3,648
CDSW3004-HF
Comchip Technology

DIODE GEN PURP 300V 225MA SOD123

Package: SOD-123

Stock29,814
RF501BM2STL
Rohm Semiconductor

DIODE GEN PURP 200V 5A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,912
STPS1H100A
STMicroelectronics

DIODE SCHOTTKY 100V 1A SMA

Package: DO-214AC, SMA

Stock1,575,972
CLLSH1-60-TR
Central Semiconductor Corp

DIODE SCHOTTKY 60V 1A SMA

Package: -

Request a Quote
UES1106HR2
Microchip Technology

DIODE GEN PURP 400V 2A A AXIAL

Package: -

Request a Quote
SRAF8150H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 8A ITO220AC

Package: -

Request a Quote
AU1FK-M3-H
Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 800V 1A DO219AB

Package: -

Stock53,400

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTX1N6510	Microsemi Corporation	DIODE GEN PURP 75V 300MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 300mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 16-CFlatPack Supplier Device Package: 16-Flatpack Operating Temperature - Junction: -	Package: 16-CFlatPack	Stock2,544	75V	300mA	1V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	-	-	Surface Mount	16-CFlatPack	16-Flatpack	-
CDLL0.2A20	Microsemi Corporation	DIODE SCHOTTKY 20V 200MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 20V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-213AA	Stock3,280	20V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 20V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
RDS82280XX	Powerex Inc.	DIODE MODULE 2.2KV 8000A DO200AE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 8000A Voltage - Forward (Vf) (Max) @ If: 820mV @ 4000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 300mA @ 2200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: - Operating Temperature - Junction: -	Package: DO-200AE	Stock6,800	2200V	8000A	820mV @ 4000A	Standard Recovery >500ns, > 200mA (Io)	25µs	300mA @ 2200V	-	Chassis Mount	DO-200AE	-	-
R6030835ESYA	Powerex Inc.	DIODE GEN PURP 800V 350A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 350A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -45°C ~ 150°C	Package: DO-205AB, DO-9, Stud	Stock3,344	800V	350A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 800V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-45°C ~ 150°C
JANTX1N6628US	Microsemi Corporation	DIODE GEN PURP 660V 1.75A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 660V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	Package: SQ-MELF, E	Stock7,376	660V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 660V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
UFS530J/TR13	Microsemi Corporation	DIODE GEN PURP 300V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AB, SMC	Stock4,256	300V	5A	1.2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
SURD8330T4G-VF01	ON Semiconductor	DIODE GEN PURP 300V 3A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,792	300V	3A	1.15V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3	-65°C ~ 175°C
UGF8DTHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack, Isolated Tab	Stock4,208	200V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 200V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
BYV98-100-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 100V 4A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-64, Axial	Stock3,232	100V	4A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
DSS2-60AT2	IXYS	DIODE SCHOTTKY 60V 2A TO92-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,528	60V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3	-40°C ~ 175°C
1N5407GHA0G	TSC America Inc.	DIODE, 3A, 800V, AEC-Q101, DO-20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock7,760	800V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SD103AWS-HE3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 350MA 40V SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	Package: SC-76, SOD-323	Stock5,072	40V	350mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
F1T2G A0G	TSC America Inc.	DIODE, FAST, 1A, 100V, 150NS, TS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: T-18, Axial	Stock3,648	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
CDSW3004-HF	Comchip Technology	DIODE GEN PURP 300V 225MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 225mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 240V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 150°C	Package: SOD-123	Stock29,814	300V	225mA	1.25V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	50ns	100nA @ 240V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
RF501BM2STL	Rohm Semiconductor	DIODE GEN PURP 200V 5A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 920mV @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,912	200V	5A	920mV @ 5A	Standard Recovery >500ns, > 200mA (Io)	25ns	1µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	150°C (Max)
STPS1H100A	STMicroelectronics	DIODE SCHOTTKY 100V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: 175°C (Max)	Package: DO-214AC, SMA	Stock1,575,972	100V	1A	770mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	4µA @ 100V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	175°C (Max)
CLLSH1-60-TR	Central Semiconductor Corp	DIODE SCHOTTKY 60V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -	Package: -	Request a Quote	60 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	-	Surface Mount	DO-214AC, SMA	SMA	-
UES1106HR2	Microchip Technology	DIODE GEN PURP 400V 2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -	Package: -	Request a Quote	400 V	2A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	-	-	Through Hole	A, Axial	A, Axial	-
SRAF8150H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	150 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
AU1FK-M3-H	Vishay General Semiconductor - Diodes Division	DIODE AVALANCHE 800V 1A DO219AB Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock53,400	800 V	1A	1.85 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 800 V	8.2pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
RB088LAM100TR	Rohm Semiconductor	DIODE SCHOTTKY 100V 5A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C	Package: -	Stock7,983	100 V	5A	870 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 µA @ 100 V	-	Surface Mount	SOD-128	PMDTM	150°C
ND171N16KHPSA2	Infineon Technologies	DIODE GEN PURP 1.6KV 171A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 171A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: 150°C	Package: -	Request a Quote	1600 V	171A	1.26 V @ 500 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1600 V	-	Chassis Mount	Module	-	150°C
MSASC25W100KV	Microchip Technology	DIODE SCHOTTKY 100V 25A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 910 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	25A	910 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 175°C
VSSAF5M103-M3-H	Vishay	5A, 100V, SLIM SMA TRENCH SKY RE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.4A Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 140 µA @ 100 V Capacitance @ Vr, F: 570pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	100 V	2.4A	730 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	140 µA @ 100 V	570pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 175°C
SS26B-HF	Comchip Technology	DIODE SCHOTTKY 60V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 220pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	220pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
PG600M_R2_00001	Panjit International Inc.	DIODE GEN PURP 1KV 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	6A	1 V @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-55°C ~ 150°C
MURB2J_R1_00001	Panjit International Inc.	DIODE GEN PURP 600V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock4,731	600 V	2A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 175°C
V2FM12-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 120V 2A DO219AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 65 µA @ 120 V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	120 V	2A	960 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	65 µA @ 120 V	130pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-40°C ~ 175°C