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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 45V 16A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 |
Stock21,144 |
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45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 30V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 480mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5mA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock6,384 |
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30V | 3A | 480mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 8A, 100V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock4,496 |
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100V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 60V 20A POWERDI5
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 180µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: PowerDI? 5
- Supplier Device Package: PowerDI?5
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: PowerDI? 5 |
Stock2,240 |
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60V | 20A | 570mV @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 180µA @ 60V | - | Surface Mount | PowerDI? 5 | PowerDI?5 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AC, SMA |
Stock2,096 |
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20V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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TSC America Inc. |
DIODE, 1A, 100V, AEC-Q101, SUB S
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-219AB |
Stock6,608 |
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100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 100V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
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Diodes Incorporated |
SCHOTTKY RECTIFIER TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 860mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 120µA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-3 |
Stock3,616 |
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120V | 10A | 860mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 5A TO220F-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock36,540 |
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600V | 5A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -40°C ~ 150°C |
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Panasonic Electronic Components |
DIODE GEN PURP 80V 100MA SMINI3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3ns
- Current - Reverse Leakage @ Vr: 100nA @ 75V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-85 |
Stock6,752 |
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80V | 100mA (DC) | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3ns | 100nA @ 75V | - | Surface Mount | SC-85 | SMini3-F2 | 150°C (Max) |
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Comchip Technology |
DIODE SCHOTTKY 200V 3A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 200V
- Capacitance @ Vr, F: 250pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -50°C ~ 175°C
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Package: DO-214AA, SMB |
Stock27,678 |
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200V | 3A (DC) | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 200V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 4A SOD64
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: SOD-64, Axial
- Supplier Device Package: SOD-64
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: SOD-64, Axial |
Stock59,076 |
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200V | 4A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Panjit International Inc. |
DIODE SCHOTTKY 20V 1A SOD123FL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 mA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Stock13,158 |
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20 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25 mA @ 20 V | - | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 50V 20A DO203AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: 300pF @ 10V, 1MHz
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA (DO-4)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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50 V | 20A | 950 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 50 V | 300pF @ 10V, 1MHz | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 400V 1A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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400 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 400V 85A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5 (DO-203AB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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400 V | 85A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 400 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -55°C ~ 175°C |
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Harris Corporation |
DIODE AVALANCHE 1KV 50A TO218
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 3 V @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 95 ns
- Current - Reverse Leakage @ Vr: 500 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: TO-218-1
- Supplier Device Package: TO-218
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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1000 V | 50A | 3 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 500 µA @ 1000 V | - | Chassis Mount | TO-218-1 | TO-218 | -65°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 800V 65A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 65A
- Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 65 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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800 V | 65A | 1.12 V @ 65 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 800 V | - | Through Hole | TO-247-3 | TO-247AD | -40°C ~ 150°C |
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Microchip Technology |
DIODE SCHOTTKY 15V 150A THINKEY3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 15 V
- Capacitance @ Vr, F: 10000pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: ThinKey™3
- Supplier Device Package: ThinKey™3
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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15 V | 150A | 500 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 15 V | 10000pF @ 5V, 1MHz | Surface Mount | ThinKey™3 | ThinKey™3 | -65°C ~ 150°C |
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KYOCERA AVX |
DIODE SCHOTTKY 200V 3A NA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
- Supplier Device Package: NA (DO-221BC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock17,985 |
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200 V | 3A | 900 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 200 V | - | Surface Mount | DO-221BC, SMA Flat Leads Exposed Pad | NA (DO-221BC) | -40°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 300V 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 300 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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300 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 300 V | 30pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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1000 V | 2A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 5 µA @ 1000 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: R-6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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1000 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | 100pF @ 4V, 1MHz | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
2A, 30V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 30 V
- Capacitance @ Vr, F: 35pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: Micro SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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30 V | 2A | 600 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 30 V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 15A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 15A | 750 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 60V 20A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Stock8,739 |
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60 V | 20A | 700 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 800V 1A SOD123F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock16,992 |
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800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 800 V | 9pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -65°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 120V 10A TO277B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 120 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277B
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock14,910 |
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120 V | 10A | 800 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25 µA @ 120 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |