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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 28pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 125°C (Max)
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Package: DO-201AD, Axial |
Stock64,200 |
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100V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | 125°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 200V 3A CPD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: CPD
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock15,084 |
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200V | 3A | 930mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPD | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,440 |
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600V | 8A | 2.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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Powerex Inc. |
DIODE MODULE 200V 1200A DO200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1200A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10µs
- Current - Reverse Leakage @ Vr: 50mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -
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Package: DO-200AA, A-PUK |
Stock3,360 |
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200V | 1200A | 1.6V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 10µs | 50mA @ 200V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, R62 | - |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 200V 85A D-55
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-55 T-Module
- Supplier Device Package: D-55
- Operating Temperature - Junction: -
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Package: D-55 T-Module |
Stock5,808 |
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200V | 85A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 200V | - | Chassis Mount | D-55 T-Module | D-55 | - |
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GeneSiC Semiconductor |
DIODE GEN PURP 50V 60A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-203AB, DO-5, Stud |
Stock7,392 |
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50V | 60A | 1.1V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 100µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,296 |
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400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 400V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, 10A, 800V, AEC-Q101, DO-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 800V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock4,032 |
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800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 2.5µA @ 70V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,832 |
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75V | 150mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 2.5µA @ 70V | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 150°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A E3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 1µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: E3
- Supplier Device Package: E3
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: E3 |
Stock6,228 |
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800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 800V | - | - | E3 | E3 | -65°C ~ 175°C |
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WeEn Semiconductors |
DIODE GEN PURP 150V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 |
Stock26,280 |
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150V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214BA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214BA |
Stock4,512 |
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600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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onsemi |
DIODE SCHOTTKY 40V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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40 V | 2A | 500 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 40 V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 1.2KV 22A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 22A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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1200 V | 22A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1200 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
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KYOCERA AVX |
DIODE GEN PURP 400V 3A NSMC_FL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: nSMC_FL
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock40,542 |
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400 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 400 V | - | Surface Mount | DO-214AB, SMC | nSMC_FL | -55°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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100 V | 1A | 850 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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Panjit International Inc. |
DIODE SCHOTTKY 40V 8A TO263
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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40 V | 8A | 550 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 200V 3A DIE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 70 µA @ 200 V
- Capacitance @ Vr, F: 60pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -55°C ~ 200°C
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Package: - |
Request a Quote |
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200 V | 3A | 920 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70 µA @ 200 V | 60pF @ 5V, 1MHz | Surface Mount | Die | Die | -55°C ~ 200°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 1 µA @ 1000 V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 7200V 4825A W121
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 7200 V
- Current - Average Rectified (Io): 4825A
- Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 53 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AD
- Supplier Device Package: W121
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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7200 V | 4825A | 4.04 V @ 10000 A | Standard Recovery >500ns, > 200mA (Io) | 53 µs | 100 mA @ 7200 V | - | Chassis Mount | DO-200AD | W121 | -40°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 600V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 6A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 6A | 975 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Microchip Technology |
SMALL-SIGNAL SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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onsemi |
DIODE SIL CARB 1.2KV 53A TO247-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 53A
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
- Capacitance @ Vr, F: 3691pF @ 1V, 100kHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1200 V | 53A | 1.75 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 3691pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD128
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock42,000 |
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1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 1000 V | 9pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
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Wolfspeed, Inc. |
DIODE SIL CARB 1.7KV 18A TO247-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1700 V
- Current - Average Rectified (Io): 18A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
- Capacitance @ Vr, F: 425pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1700 V | 18A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 425pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 2.2KV 950A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 950A
- Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: - |
Request a Quote |
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2200 V | 950A | 1.12 V @ 650 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 2200 V | - | Clamp On | DO-200AA, A-PUK | - | -40°C ~ 180°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V 3A PMDS
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 80 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: PMDS
- Operating Temperature - Junction: 150°C
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Package: - |
Stock1,236 |
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30 V | 3A | 530 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 30 V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C |