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Microsemi Corporation |
DIODE SCHOTTKY 150V 20A DO203AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: 300pF @ 10V, 1MHz
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA (DO-4)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock5,712 |
|
150V | 20A | 950mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 300pF @ 10V, 1MHz | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 400V MAGN-A-PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 320A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: MAGN-A-PAK (3)
- Supplier Device Package: MAGN-A-PAK?
- Operating Temperature - Junction: -
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Package: MAGN-A-PAK (3) |
Stock5,184 |
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400V | 320A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | MAGN-A-PAK (3) | MAGN-A-PAK? | - |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 30MA DO34
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 30mA
- Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 25V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: MSD
- Operating Temperature - Junction: -
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Package: DO-204AG, DO-34, Axial |
Stock3,952 |
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40V | 30mA | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 25V | - | Through Hole | DO-204AG, DO-34, Axial | MSD | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 30A TO247AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 160ns
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC Modified
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-247-2 |
Stock3,168 |
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200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Panasonic Electronic Components |
DIODE GEN PURP 150V 200MA SMINI2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200nA @ 150V
- Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SMini2-F1
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-90, SOD-323F |
Stock4,304 |
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150V | 200mA | 1.2V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 150V | 4.5pF @ 0V, 1MHz | Surface Mount | SC-90, SOD-323F | SMini2-F1 | 150°C (Max) |
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Powerex Inc. |
DIODE GEN PURP 1.2KV 100A DO205
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock5,216 |
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1200V | 100A | 1.3V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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TSC America Inc. |
DIODE, SUPER FAST, 20A, 150V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: 170pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock3,040 |
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150V | 20A | 975mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 170pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3.0A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: 115pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock4,272 |
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100V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 115pF @ 5V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 175°C |
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Sanken |
DIODE GEN PURP 600V 600MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 600mA
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 600mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock6,512 |
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600V | 600mA | 1.5V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 1KV 6A R-6
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 6A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: 150pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: R6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: R6, Axial |
Stock7,360 |
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1000V | 6A | 950mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 150pF @ 4V, 1MHz | Through Hole | R6, Axial | R-6 | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 600V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 27pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-204AC, DO-15, Axial |
Stock6,736 |
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600V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | 27pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE SCHOTTKY 200V 1A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 200V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: DO-214AA, SMB |
Stock4,304 |
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200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 200V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 125°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 1000V
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock2,480 |
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- | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 1.5A, 50V, 150NS, A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock3,536 |
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50V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock6,720 |
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100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Nexperia USA Inc. |
BAS116L/SOD882/SOD2
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock4,272 |
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- | - | - | - | - | - | - | - | - | - | - |
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Comchip Technology |
DIODE SCHOTTKY 40V 2A Z2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: 115pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: Z2PAK
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: 2-SMD, No Lead |
Stock5,888 |
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40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 115pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | Z2PAK | -55°C ~ 125°C |
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STMicroelectronics |
DIODE SCHOTTKY 30V 300MA 0201
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 310mV @ 10mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-XFDFN
- Supplier Device Package: 0201
- Operating Temperature - Junction: -30°C ~ 85°C
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Package: 2-XFDFN |
Stock251,844 |
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30V | 300mA | 310mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | 2-XFDFN | 0201 | -30°C ~ 85°C |
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Solid State Inc. |
DIODE GEN PURP 400V 40A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 40A | 1.3 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 400 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 50V 12A TO254
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 300pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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50 V | 12A | 1.05 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 300pF @ 5V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | - |
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IXYS |
DIODE GEN PURP 1.2KV 358A W1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 358A
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 750 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.4 µs
- Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W1
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
Request a Quote |
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1200 V | 358A | 2.1 V @ 750 A | Standard Recovery >500ns, > 200mA (Io) | 1.4 µs | 20 mA @ 1200 V | - | Clamp On | DO-200AB, A-PUK | W1 | -40°C ~ 125°C |
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Nexperia USA Inc. |
DIODE SCHOT 30V 200MA DFN1110D-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
- Operating Temperature - Junction: 150°C
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Package: - |
Stock15,000 |
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30 V | 200mA | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 | 150°C |
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Micro Commercial Co |
DIODE GEN PURP 100V 200MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 100 V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock12,087 |
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100 V | 200mA | 1.25 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 100 V | 1.5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
50NS, 0.8A, 200V, HIGH EFFICIENT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 800 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock60,000 |
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200 V | 800mA | 1 V @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 1 µA @ 200 V | 17pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
35NS, 10A, 400V, SUPER FAST RECO
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 140pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock32,385 |
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400 V | 10A | 1.2 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 140pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 100V 1A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 1A | 750 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | 120pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 720 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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60 V | 3A | 720 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 60 V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 300V 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 300 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
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300 V | 15A | 1.25 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 40 µA @ 300 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |