Page 1730 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4933
Fairchild/ON Semiconductor

DIODE GEN PURP 50V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock21,600
US1D-13
Diodes Incorporated

DIODE GEN PURP 200V 1A SMA

Package: DO-214AC, SMA

Stock357,480
1N4245
Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Package: A, Axial

Stock5,744
VS-10ETS12STRRPBF
Vishay Semiconductor Diodes Division

DIODE RECT 1200V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,992
SFAF1607G C0G
TSC America Inc.

DIODE, SUPER FAST, 16A, 500V, 35

Package: TO-220-2 Full Pack

Stock3,936
GI1402HE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO220AC

Package: TO-220-2

Stock2,864
SE70PGHM3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2.9A TO277A

Package: TO-277, 3-PowerDFN

Stock5,040
AS1PJHM3/85A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 1.5A DO220

Package: DO-220AA

Stock5,536
GL41BHE3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

Package: DO-213AB, MELF (Glass)

Stock3,216
ESH2C M4G
TSC America Inc.

DIODE, ULTRA FAST, 2A, 150V, 25N

Package: DO-214AA, SMB

Stock5,712
ES1DL MTG
TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Package: DO-219AB

Stock5,680
SMD15PL-TP
Micro Commercial Co

DIODE SCHOTTKY 50V 1A SOD123FL

Package: SOD-123F

Stock300,000
ES1DL RHG
TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Package: DO-219AB

Stock3,168
RS1BLHMTG
TSC America Inc.

DIODE, FAST, 0.8A, 100V, 150NS,

Package: DO-219AB

Stock4,624
RS1JL RHG
TSC America Inc.

DIODE, FAST, 0.8A, 600V, 250NS,

Package: DO-219AB

Stock4,912
SK110B R5G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Package: DO-214AA, SMB

Stock3,424
SJPX-H3VR
Sanken

DIODE GEN PURP 300V 2A SJP

Package: 2-SMD, J-Lead

Stock6,608
P600D-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600

Package: P600, Axial

Stock4,640
ST1045STR
SMC Diode Solutions

DIODE SCHOTTKY 45V TO277B

Package: TO-277, 3-PowerDFN

Stock46,776
S4K
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 4A DO214AB

Package: -

Stock8,700

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4933	Fairchild/ON Semiconductor	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock21,600	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
US1D-13	Diodes Incorporated	DIODE GEN PURP 200V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AC, SMA	Stock357,480	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
1N4245	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: A, Axial	Stock5,744	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
VS-10ETS12STRRPBF	Vishay Semiconductor Diodes Division	DIODE RECT 1200V 10A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,992	1200V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
SFAF1607G C0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 500V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack	Stock3,936	500V	16A	1.7V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
GI1402HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2	Stock2,864	100V	8A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
SE70PGHM3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2.9A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.6µs Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock5,040	400V	2.9A	1.05V @ 7A	Standard Recovery >500ns, > 200mA (Io)	2.6µs	20µA @ 400V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
AS1PJHM3/85A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 1.5A DO220 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock5,536	600V	1.5A (DC)	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	10.4pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
GL41BHE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AB, MELF (Glass)	Stock3,216	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
ESH2C M4G	TSC America Inc.	DIODE, ULTRA FAST, 2A, 150V, 25N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AA, SMB	Stock5,712	150V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	2µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
ES1DL MTG	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock5,680	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SMD15PL-TP	Micro Commercial Co	DIODE SCHOTTKY 50V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C	Package: SOD-123F	Stock300,000	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	110pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 125°C
ES1DL RHG	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,168	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BLHMTG	TSC America Inc.	DIODE, FAST, 0.8A, 100V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock4,624	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1JL RHG	TSC America Inc.	DIODE, FAST, 0.8A, 600V, 250NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock4,912	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SK110B R5G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock3,424	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SJPX-H3VR	Sanken	DIODE GEN PURP 300V 2A SJP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 50µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	Package: 2-SMD, J-Lead	Stock6,608	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	50µA @ 300V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
P600D-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	Package: P600, Axial	Stock4,640	200V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 200V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
ST1045STR	SMC Diode Solutions	DIODE SCHOTTKY 45V TO277B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 45V Capacitance @ Vr, F: 579pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock46,776	45V	-	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 45V	579pF @ 5V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
S4K	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 100 µA @ 800 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,700	800 V	4A	-	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	100 µA @ 800 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
DSEI12-06AS-TUB	IXYS	DIODE GEN PURP 600V 14A TO263AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 14A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock177	600 V	14A	1.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AA	-40°C ~ 150°C
FR105-AP	Micro Commercial Co	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
SS110LH	Taiwan Semiconductor Corporation	1A, 100V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	1A	800 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Surface Mount	SOD-123	Sub SMA	-55°C ~ 150°C
1N3171A	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 700 V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 240 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 700 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	700 V	240A	1.25 V @ 240 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 700 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
1N4256SM	Microchip Technology	DIODE GP 2.5KV 250MA S SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 100 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 2500 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, S Supplier Device Package: S, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	2500 V	250mA	3.5 V @ 100 mA	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 2500 V	-	Surface Mount	SQ-MELF, S	S, SQ-MELF	-65°C ~ 175°C
1N4934GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 100 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SMBD1002T	onsemi	SS SOT23 SWCH DIO SPCL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JAN1N5196	Microchip Technology	DIODE GEN PURP 225V 100MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 250 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	225 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 250 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C