Page 1768 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

DGS20-025AS
IXYS

DIODE SCHOTTKY 250V 18A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,784
LLSD103C-7
Diodes Incorporated

DIODE SCHOTTKY 20V 350MA MINMELF

Package: DO-213AC, MINI-MELF, SOD-80

Stock180,000
1N2133A
GeneSiC Semiconductor

DIODE GEN PURP 300V 60A DO5

Package: DO-203AB, DO-5, Stud

Stock4,656
UPR40E3/TR13
Microsemi Corporation

DIODE GEN PURP 400V 2A POWERMITE

Package: DO-216AA

Stock7,424
UPS170/TR7
Microsemi Corporation

DIODE SCHOTTKY 1A 70V POWERMITE

Package: -

Stock6,560
SE70PD-M3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2.9A TO277A

Package: TO-277, 3-PowerDFN

Stock5,232
SS39 R7G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

Package: DO-214AB, SMC

Stock2,432
AG01V
Sanken

DIODE GEN PURP 400V 700MA AXIAL

Package: Axial

Stock7,440
UF3004-G
Comchip Technology

DIODE GEN PURP 300V 3A DO201AA

Package: DO-201AA, DO-27, Axial

Stock4,704
HS2G R5G
TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 400V,

Package: DO-214AA, SMB

Stock6,208
MPG06M-E3/100
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A MPG06

Package: MPG06, Axial

Stock3,568
1N5408G R0G
TSC America Inc.

DIODE, 3A, 1000V, DO-201AD

Package: DO-201AD, Axial

Stock2,336
GP08J-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 800MA DO204

Package: DO-204AL, DO-41, Axial

Stock7,488
ES1CHM2G
TSC America Inc.

DIODE, SUPER FAST, 1A, 150V, 35N

Package: DO-214AC, SMA

Stock3,696
VS-16EDU06HM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 16A TO263AC

Package: TO-263-3, D2Pak (2 Leads + Tab) Variant

Stock5,360
RB162L-40TE25
Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDS

Package: DO-214AC, SMA

Stock15,288
CDBF0245
Comchip Technology

DIODE SCHOTTKY 45V 200MA 1005

Package: 1005 (2512 Metric)

Stock35,994
BAV20,133
Nexperia USA Inc.

DIODE GEN PURP 150V 250MA ALF2

Package: DO-204AH, DO-35, Axial

Stock85,560
GC9702-00
Microchip Technology

DIODE SCHOTTKY 20V 35MA CHIP

Package: -

Request a Quote
1N1346RA
Solid State Inc.

DIODE GEN PURP REV 400V 16A DO4

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DGS20-025AS	IXYS	DIODE SCHOTTKY 250V 18A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 250V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,784	250V	18A	1.5V @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 250V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 175°C
LLSD103C-7	Diodes Incorporated	DIODE SCHOTTKY 20V 350MA MINMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-213AC, MINI-MELF, SOD-80	Stock180,000	20V	350mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 10V	50pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-55°C ~ 125°C
1N2133A	GeneSiC Semiconductor	DIODE GEN PURP 300V 60A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-203AB, DO-5, Stud	Stock4,656	300V	60A	1.1V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
UPR40E3/TR13	Microsemi Corporation	DIODE GEN PURP 400V 2A POWERMITE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-216AA	Stock7,424	400V	2A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
UPS170/TR7	Microsemi Corporation	DIODE SCHOTTKY 1A 70V POWERMITE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock6,560	-	-	-	-	-	-	-	-	-	-	-
SE70PD-M3/87A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2.9A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.9A (DC) Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 20µA @ 200V Capacitance @ Vr, F: 76pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock5,232	200V	2.9A (DC)	1.05V @ 7A	Fast Recovery =< 500ns, > 200mA (Io)	2.5µs	20µA @ 200V	76pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SS39 R7G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock2,432	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
AG01V	Sanken	DIODE GEN PURP 400V 700MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 1.8V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock7,440	400V	700mA	1.8V @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	100ns	100µA @ 400V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
UF3004-G	Comchip Technology	DIODE GEN PURP 300V 3A DO201AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-201AA, DO-27, Axial	Stock4,704	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	50pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	DO-27	-55°C ~ 125°C
HS2G R5G	TSC America Inc.	DIODE, HIGH EFFICIENT, 2A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock6,208	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MPG06M-E3/100	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	Package: MPG06, Axial	Stock3,568	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
1N5408G R0G	TSC America Inc.	DIODE, 3A, 1000V, DO-201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock2,336	-	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	25pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
GP08J-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 800MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock7,488	600V	800mA	1.3V @ 800mA	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
ES1CHM2G	TSC America Inc.	DIODE, SUPER FAST, 1A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock3,696	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
VS-16EDU06HM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 16A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab) Variant	Stock5,360	600V	16A	1.25V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	15µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
RB162L-40TE25	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	Package: DO-214AC, SMA	Stock15,288	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
CDBF0245	Comchip Technology	DIODE SCHOTTKY 45V 200MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: 9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	Package: 1005 (2512 Metric)	Stock35,994	45V	200mA	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	9pF @ 10V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
BAV20,133	Nexperia USA Inc.	DIODE GEN PURP 150V 250MA ALF2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: ALF2 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock85,560	150V	250mA (DC)	1.25V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	ALF2	175°C (Max)
GC9702-00	Microchip Technology	DIODE SCHOTTKY 20V 35MA CHIP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 35mA Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 nA @ 15 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Chip Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	20 V	35mA	430 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	300 nA @ 15 V	1.5pF @ 0V, 1MHz	Surface Mount	Die	Chip	-55°C ~ 150°C
1N1346RA	Solid State Inc.	DIODE GEN PURP REV 400V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	400 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
ES1JAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock5,307	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 600 V	15pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
SX36_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 60V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock10,467	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
S2M_R1_00001	Panjit International Inc.	DIODE GEN PURP 1KV 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock11,139	1000 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
1A4-TP	Micro Commercial Co	DIODE GEN PURP 400V 1A R-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-1, Axial Supplier Device Package: R-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	R-1, Axial	R-1	-55°C ~ 150°C
BAV16W-EVL	Venkel	Rectifier,SOD-123,75V,150mA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	75 V	150mA	855 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	6 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	SOD-123	-	-55°C ~ 150°C
VS-25ETS12SLHM3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 25A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock6,903	1200 V	25A	1.14 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
D1461S45TXPSA1	Infineon Technologies	DIODE GEN PURP 1720A D10026K-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1720A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200, Variant Supplier Device Package: BG-D10026K-1 Operating Temperature - Junction: -40°C ~ 140°C	Package: -	Request a Quote	-	1720A	-	Standard Recovery >500ns, > 200mA (Io)	-	200 mA @ 4500 V	-	Chassis Mount	DO-200, Variant	BG-D10026K-1	-40°C ~ 140°C
ES2C-HF	Comchip Technology	DIODE GEN PURP 150V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock29,559	150 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C