Page 1769 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

CR3F-060 BK
Central Semiconductor Corp

DIODE GEN PURP 600V 3A DO201AD

Package: DO-201AD, Axial

Stock2,512
UH6PJ-M3/86A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A TO277A

Package: TO-277, 3-PowerDFN

Stock4,064
R5100415XXWA
Powerex Inc.

DIODE GEN PURP 400V 150A DO205AA

Package: DO-205AA, DO-8, Stud

Stock2,256
MBR0530T3
ON Semiconductor

DIODE SCHOTTKY 30V 500MA SOD123

Package: SOD-123

Stock211,920
BAY71
Fairchild/ON Semiconductor

DIODE GEN PURP 50V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock4,352
10ETF10STRR
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,952
FR12GR02
GeneSiC Semiconductor

DIODE GEN PURP REV 400V 12A DO4

Package: DO-203AA, DO-4, Stud

Stock2,976
SRAF540 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 4

Package: TO-220-2 Full Pack

Stock3,888
VFT3080S-E3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 80V ITO-220AB

Package: TO-220-3

Stock6,640
UPR15E3/TR13
Microsemi Corporation

DIODE GEN PURP 150V 2.5A DO216

Package: DO-216AA

Stock6,320
BYT52G-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.4A SOD57

Package: SOD-57, Axial

Stock4,704
NRVUS220VT3G
ON Semiconductor

DIODE ULT FAST 100V 2A SMB2

Package: DO-214AA, SMB

Stock4,032
ACDBA360-HF
Comchip Technology

DIODE SCHOTTKY 60V 3A DO214AC

Package: DO-214AC, SMA

Stock7,712
1N4006E-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock6,480
BAS16W-7
Diodes Incorporated

DIODE GEN PURP 75V 150MA SOT323

Package: SC-70, SOT-323

Stock27,600
CD214A-B260LF
Bourns Inc.

DIODE SCHOTTKY 60V 2A SMA

Package: DO-214AC, SMA

Stock155,088
S1MB-13-F
Diodes Incorporated

DIODE GEN PURP 1KV 1A SMB

Package: DO-214AA, SMB

Stock1,173,252
1N2155R
Solid State Inc.

DIODE GEN PURP REV 100V 40A DO5

Package: -

Request a Quote
RB511VM-40FHTE-17
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

Package: -

Stock6
MS110_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 100V 1A SMA

Package: -

Stock16,200

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CR3F-060 BK	Central Semiconductor Corp	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-201AD, Axial	Stock2,512	600V	3A	1.2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
UH6PJ-M3/86A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 6A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock4,064	600V	6A	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
R5100415XXWA	Powerex Inc.	DIODE GEN PURP 400V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 30mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock2,256	400V	150A	1.4V @ 470A	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
MBR0530T3	ON Semiconductor	DIODE SCHOTTKY 30V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 130µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -65°C ~ 125°C	Package: SOD-123	Stock211,920	30V	500mA	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 30V	-	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
BAY71	Fairchild/ON Semiconductor	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 35V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock4,352	50V	200mA	1V @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 35V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
10ETF10STRR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 10A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,952	1000V	10A	1.33V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	310ns	100µA @ 1000V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
FR12GR02	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock2,976	400V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
SRAF540 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 125°C	Package: TO-220-2 Full Pack	Stock3,888	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
VFT3080S-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 80V ITO-220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 950mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 80V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3	Stock6,640	80V	30A	950mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 80V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
UPR15E3/TR13	Microsemi Corporation	DIODE GEN PURP 150V 2.5A DO216 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-216AA	Stock6,320	150V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 150V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
BYT52G-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1.4A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-57, Axial	Stock4,704	400V	1.4A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
NRVUS220VT3G	ON Semiconductor	DIODE ULT FAST 100V 2A SMB2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mA @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AA, SMB	Stock4,032	200V	2A	950mA @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
ACDBA360-HF	Comchip Technology	DIODE SCHOTTKY 60V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AC, SMA	Stock7,712	60V	3A (DC)	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	150pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
1N4006E-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock6,480	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAS16W-7	Diodes Incorporated	DIODE GEN PURP 75V 150MA SOT323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -65°C ~ 150°C	Package: SC-70, SOT-323	Stock27,600	75V	150mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-65°C ~ 150°C
CD214A-B260LF	Bourns Inc.	DIODE SCHOTTKY 60V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AC, SMA	Stock155,088	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	200pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 125°C
S1MB-13-F	Diodes Incorporated	DIODE GEN PURP 1KV 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock1,173,252	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
1N2155R	Solid State Inc.	DIODE GEN PURP REV 100V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	100 V	40A	1.19 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
RB511VM-40FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 410 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	Package: -	Stock6	40 V	100mA	410 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	25 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
MS110_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Stock16,200	100 V	1A	800 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C
SBR2M100SAF-13	Diodes Incorporated	DIODE SBR 100V 2A SMAF T&R Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 780 mV @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock26,070	100 V	2A	780 mV @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 100 V	-	Surface Mount	DO-214AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
V5N103-M3-H	Vishay	5A, 100V, DFN3820A TRENCH SKY RE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 210 µA @ 100 V Capacitance @ Vr, F: 560pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	100 V	5A	710 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	210 µA @ 100 V	560pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 150°C
SICRB5650	SMC Diode Solutions	DIODE SIL CARBIDE 650V 5A D2PAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
MSC015SDA120K	Microchip Technology	DIODE SIL CARB 1.2KV 36A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 36A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Capacitance @ Vr, F: 906pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1200 V	36A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	906pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
B0530WSHE3-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 500MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 30 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock24,429	30 V	500mA	550 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 30 V	30pF @ 4V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
UF5GD1-13	Diodes Incorporated	DIODE GEN PURP 400V 5A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 61pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	400 V	5A	1.4 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 400 V	61pF @ 10V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-65°C ~ 150°C
NRVBSS36FA	onsemi	DIODE SCHOTTKY 60V 3A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 117pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,415	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	11 ns	500 µA @ 60 V	117pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
1N6627U-TR	Microchip Technology	DIODE GEN PURP 400V 4A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 2 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -	Package: -	Request a Quote	400 V	4A	1.5 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 400 V	-	Surface Mount	SQ-MELF, E	D-5B	-