Page 1770 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

MBRB10H90CT-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-263AB

Package: -

Stock2,016
1N5625GP-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AC

Package: -

Stock3,344
MBRB16H45HE3/81
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,960
FGP20C-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 2A DO204AC

Package: DO-204AC, DO-15, Axial

Stock4,960
10WQ045FN
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock318,456
189NQ135-1
SMC Diode Solutions

DIODE SCHOTTKY 135V 180A PRM1-1

Package: HALF-PAK

Stock3,584
S6JR
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 6A DO4

Package: DO-203AA, DO-4, Stud

Stock3,408
DSI30-08AC
IXYS

DIODE GEN 800V 30A ISOPLUS220

Package: ISOPLUS220?

Stock5,152
UPR5/TR13
Microsemi Corporation

DIODE GEN PURP 50V 2.5A DO216

Package: DO-216AA

Stock6,032
VS-HFA15TB60-1PBF
Vishay Semiconductor Diodes Division

DIODE HEXFRED 15A 600V TO-220AC

Package: TO-220-2

Stock6,240
AU3PD-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.7A TO277A

Package: TO-277, 3-PowerDFN

Stock2,944
SBR2A150SP5-13
Diodes Incorporated

DIODE SBR 150V 2A PDI5

Package: PowerDI? 5

Stock3,440
BYV26B-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1A SOD57

Package: SOD-57, Axial

Stock600,000
SS34-M3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 40V DO-214AB

Package: DO-214AB, SMC

Stock2,864
F1T1GHA1G
TSC America Inc.

DIODE, FAST, 1A, 50V, 150NS, AEC

Package: T-18, Axial

Stock5,664
CDSF355B-HF
Comchip Technology

DIODE GEN PURP 80V 100MA 1005

Package: 1005 (2512 Metric)

Stock3,472
SBR5E45P5-7D
Diodes Incorporated

DIODE RECT SBR 45V 5A POWERDI5

Package: PowerDI? 5

Stock5,728
30BQ150TR
SMC Diode Solutions

DIODE SCHOTTKY 150V SMC

Package: DO-214AB, SMC

Stock6,992
PMEG3002ESFYL
Nexperia USA Inc.

DIODE SCHOTTKY 30V 0.2A SOD962

Package: 0201 (0603 Metric)

Stock160,308
1N5400G
ON Semiconductor

DIODE GEN PURP 50V 3A DO201AD

Package: DO-201AA, DO-27, Axial

Stock24,000

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRB10H90CT-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY TO-263AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock2,016	-	-	-	-	-	-	-	-	-	-	-
1N5625GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO204AC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,344	-	-	-	-	-	-	-	-	-	-	-
MBRB16H45HE3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,960	45V	16A	660mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
FGP20C-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock4,960	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 150V	45pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
10WQ045FN	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 10A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock318,456	45V	10A	630mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	-40°C ~ 175°C
189NQ135-1	SMC Diode Solutions	DIODE SCHOTTKY 135V 180A PRM1-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 135V Current - Average Rectified (Io): 180A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 180A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5mA @ 135V Capacitance @ Vr, F: 4500pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: PRM1-1 (Half Pak Module) Operating Temperature - Junction: -55°C ~ 175°C	Package: HALF-PAK	Stock3,584	135V	180A	1.07V @ 180A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5mA @ 135V	4500pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 175°C
S6JR	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 6A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AA, DO-4, Stud	Stock3,408	600V	6A	1.1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
DSI30-08AC	IXYS	DIODE GEN 800V 30A ISOPLUS220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 45A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS220? Supplier Device Package: ISOPLUS220? Operating Temperature - Junction: -55°C ~ 150°C	Package: ISOPLUS220?	Stock5,152	800V	30A	1.45V @ 45A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Through Hole	ISOPLUS220?	ISOPLUS220?	-55°C ~ 150°C
UPR5/TR13	Microsemi Corporation	DIODE GEN PURP 50V 2.5A DO216 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-216AA	Stock6,032	50V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 50V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
VS-HFA15TB60-1PBF	Vishay Semiconductor Diodes Division	DIODE HEXFRED 15A 600V TO-220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock6,240	600V	15A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
AU3PD-M3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.7A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.7A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock2,944	200V	1.7A (DC)	1.9V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 200V	72pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SBR2A150SP5-13	Diodes Incorporated	DIODE SBR 150V 2A PDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	Package: PowerDI? 5	Stock3,440	150V	2A	800mV @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
BYV26B-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-57, Axial	Stock600,000	400V	1A	2.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 400V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
SS34-M3/9AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 3A 40V DO-214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock2,864	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
F1T1GHA1G	TSC America Inc.	DIODE, FAST, 1A, 50V, 150NS, AEC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: T-18, Axial	Stock5,664	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
CDSF355B-HF	Comchip Technology	DIODE GEN PURP 80V 100MA 1005 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	Package: 1005 (2512 Metric)	Stock3,472	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	3pF @ 0.5V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
SBR5E45P5-7D	Diodes Incorporated	DIODE RECT SBR 45V 5A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 600mV @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 280µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	Package: PowerDI? 5	Stock5,728	45V	5A	600mV @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	280µA @ 45V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
30BQ150TR	SMC Diode Solutions	DIODE SCHOTTKY 150V SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 860mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Capacitance @ Vr, F: 110pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AB, SMC	Stock6,992	150V	-	860mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 150V	110pF @ 5V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 175°C
PMEG3002ESFYL	Nexperia USA Inc.	DIODE SCHOTTKY 30V 0.2A SOD962 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 535mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.42ns Current - Reverse Leakage @ Vr: 9µA @ 30V Capacitance @ Vr, F: 21pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: DSN0603-2 Operating Temperature - Junction: 150°C (Max)	Package: 0201 (0603 Metric)	Stock160,308	30V	200mA	535mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	1.42ns	9µA @ 30V	21pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	DSN0603-2	150°C (Max)
1N5400G	ON Semiconductor	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-201AA, DO-27, Axial	Stock24,000	50V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 150°C
RHRG5060-F085	onsemi	DIODE GEN PURP 600V 50A TO247-2 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 250 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	600 V	50A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	250 µA @ 600 V	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
SK86	Diotec Semiconductor	DIODE SCHOTTKY 60V 8A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Stock8,511	60 V	8A	700 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
1N5804-TR	Microchip Technology	DIODE GEN PURP 100V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
HER303G-AP	Micro Commercial Co	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
JAN1N6628US-TR	Microchip Technology	DIODE GP 660V 1.75A E-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660 V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 2 µA @ 660 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: E-MELF Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	660 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 660 V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	E-MELF	-65°C ~ 150°C
1N5190-TR	Microchip Technology	DIODE GEN PURP 600V 3A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Current - Reverse Leakage @ Vr: 2 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	2 µA @ 600 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
RS1KFL	Taiwan Semiconductor Corporation	250NS, 1A, 800V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock29,985	800 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 800 V	11pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
ES1006FL_R1_00001	Panjit International Inc.	DIODE GEN PURP 600V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 500 nA @ 600 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock27,849	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	500 nA @ 600 V	7pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C