Page 51 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RB160A60T-32
Rohm Semiconductor

DIODE SCHOTTKY 60V 1A MSR

Package: DO-41 Mini, Axial

Stock3,008
RGP10JHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock4,480
R6100425XXYZ
Powerex Inc.

DIODE GEN PURP 400V 250A DO205AB

Package: DO-205AB, DO-9, Stud

Stock6,448
8TQ100STRL
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,648
VS-8EWS16STRR-M3
Vishay Semiconductor Diodes Division

DIODE RECTIFIER 1600V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,040
QH08BZ600
Power Integrations

DIODE SCHOTTKY 600V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,456
NXPSC04650XQ
WeEn Semiconductors

NXPSC04650XQ TO220F-2L STANDARD

Package: -

Stock7,760
SFAF501G C0G
TSC America Inc.

DIODE, SUPER FAST, 5A, 50V, 35NS

Package: TO-220-2 Full Pack

Stock2,752
V10PN50-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 5.3A TO277A

Package: TO-277, 3-PowerDFN

Stock7,664
EGF1BHE3/5CA
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214BA

Package: DO-214BA

Stock4,352
RS07K-M-18
Vishay Semiconductor Diodes Division

DIODE SW 800V DO219-M

Package: DO-219AB

Stock2,112
EGL34B-E3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

Package: DO-213AA (Glass)

Stock7,776
SD1206S020S1R0
AVX Corporation

DIODE SCHOTTKY 20V 1A 1206

Package: 1206 (3216 Metric)

Stock6,816
SFT11GHR0G
TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

Package: T-18, Axial

Stock5,600
1N4003GP-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock4,480
SS110LWHRVG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Package: SOD-123W

Stock2,656
RSX205L-30TE25
Rohm Semiconductor

DIODE SCHOTTKY 30V 2A TUMD2

Package: DO-214AC, SMA

Stock300,000
ES2BA-13-F
Diodes Incorporated

DIODE GEN PURP 100V 2A SMA

Package: DO-214AC, SMA

Stock440,256
ES1DF-T
Taiwan Semiconductor Corporation

35NS, 1A, 200V, SUPER FAST RECOV

Package: -

Stock22,500
1N3070-1
Microchip Technology

DIODE GEN PURP 175V 100MA DO7

Package: -

Stock786

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RB160A60T-32	Rohm Semiconductor	DIODE SCHOTTKY 60V 1A MSR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-41 Mini, Axial Supplier Device Package: MSR Operating Temperature - Junction: 150°C (Max)	Package: DO-41 Mini, Axial	Stock3,008	60V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 60V	-	Through Hole	DO-41 Mini, Axial	MSR	150°C (Max)
RGP10JHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock4,480	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
R6100425XXYZ	Powerex Inc.	DIODE GEN PURP 400V 250A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 250A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-205AB, DO-9, Stud	Stock6,448	400V	250A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 190°C
8TQ100STRL	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,648	100V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
VS-8EWS16STRR-M3	Vishay Semiconductor Diodes Division	DIODE RECTIFIER 1600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,040	1600V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
QH08BZ600	Power Integrations	DIODE SCHOTTKY 600V 8A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3.15V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11.1ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: 150°C (Max)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,456	600V	8A	3.15V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	11.1ns	250µA @ 600V	25pF @ 10V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	150°C (Max)
NXPSC04650XQ	WeEn Semiconductors	NXPSC04650XQ TO220F-2L STANDARD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock7,760	-	-	-	-	-	-	-	-	-	-	-
SFAF501G C0G	TSC America Inc.	DIODE, SUPER FAST, 5A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack	Stock2,752	50V	5A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
V10PN50-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 5.3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5.3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock7,664	50V	5.3A	550mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 50V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
EGF1BHE3/5CA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214BA	Stock4,352	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
RS07K-M-18	Vishay Semiconductor Diodes Division	DIODE SW 800V DO219-M Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 2µA @ 800V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock2,112	800V	500mA	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	2µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
EGL34B-E3/98	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA (Glass)	Stock7,776	100V	500mA	1.25V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
SD1206S020S1R0	AVX Corporation	DIODE SCHOTTKY 20V 1A 1206 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 (3216 Metric) Operating Temperature - Junction: -55°C ~ 125°C	Package: 1206 (3216 Metric)	Stock6,816	20V	1A (DC)	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	1206 (3216 Metric)	1206 (3216 Metric)	-55°C ~ 125°C
SFT11GHR0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: T-18, Axial	Stock5,600	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1N4003GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock4,480	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 200V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SS110LWHRVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123W	Stock2,656	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 100V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
RSX205L-30TE25	Rohm Semiconductor	DIODE SCHOTTKY 30V 2A TUMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: TUMD2 Operating Temperature - Junction: 150°C (Max)	Package: DO-214AC, SMA	Stock300,000	30V	2A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	TUMD2	150°C (Max)
ES2BA-13-F	Diodes Incorporated	DIODE GEN PURP 100V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock440,256	100V	2A	920mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 100V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
ES1DF-T	Taiwan Semiconductor Corporation	35NS, 1A, 200V, SUPER FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock22,500	200 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	20pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
1N3070-1	Microchip Technology	DIODE GEN PURP 175V 100MA DO7 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 175 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Stock786	175 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	-	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
S12GCH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 12A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 78pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,000	400 V	12A	1.1 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	78pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
GV804B_R2_00001	Panjit International Inc.	DIODE GEN PURP 400V 8A TO277B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock17,271	400 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	55pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
BAS16T116	Rohm Semiconductor	DIODE GEN PURP 80V 100MA SSD3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 70 V Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	80 V	100mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 70 V	3.5pF @ 6V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SSD3	150°C
JAN1N6492U4	Microchip Technology	DIODE SCHOTTKY 45V 3.6A U4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 mA @ 45 V Capacitance @ Vr, F: 450pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	45 V	3.6A	560 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 45 V	450pF @ 5V, 1MHz	Surface Mount	3-SMD, No Lead	U4	-65°C ~ 175°C
JANS1N6873UTK2-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
S4240TS	Microchip Technology	DIODE GEN PURP 400V 125A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 125A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	400 V	125A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 400 V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
FR203-TP	Micro Commercial Co	DIODE GEN PURP 200V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
RGL1GR13	Diotec Semiconductor	DIODE FAST MINIMELF 400V 150NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA, MINI-MELF Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Request a Quote	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	-	Surface Mount	DO-213AA	DO-213AA, MINI-MELF	-50°C ~ 175°C