Page 52 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SIDC06D120F6
Infineon Technologies

DIODE GEN PURP 1.2KV 5A WAFER

Package: Die

Stock3,280
CDBA120SL-HF
Comchip Technology

DIODE SCHOTTKY 20V 1A DO214AC

Package: DO-214AC, SMA

Stock2,144
VS-SD1500C16L
Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 1600A DO200AB

Package: DO-200AB, B-PUK

Stock5,952
UFS540G/TR13
Microsemi Corporation

DIODE GEN PURP 400V 5A DO215AB

Package: DO-215AB, SMC Gull Wing

Stock7,424
SFAF805G C0G
TSC America Inc.

DIODE, SUPER FAST, 8A, 300V, 35N

Package: TO-220-2 Full Pack

Stock7,488
HER307GT-G
Comchip Technology

DIODE GEN PURP 800V 3A DO201AA

Package: DO-201AA, DO-27, Axial

Stock6,368
SS115LHRTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Package: DO-219AB

Stock4,560
BAT54LP-7B
Diodes Incorporated

DIODE SCHOTTKY 30V 200MA 2DFN

Package: 2-UFDFN

Stock3,952
CDSUR400B
Comchip Technology

DIODE GEN PURP 80V 100MA 0603

Package: 2-SMD, No Lead

Stock6,528
1SS413CT,L3F
Toshiba Semiconductor and Storage

DIODE SW SCHOTT 20V 50MA CST2

Package: SOD-882

Stock5,120
SS36-E3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO214AB

Package: DO-214AB, SMC

Stock1,464,084
PMEG4010EH,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 1A SOD123F

Package: SOD-123F

Stock3,776
DB2J31600L
Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SMINI2

Package: SC-90, SOD-323F

Stock265,848
JANS1N5419US
Microchip Technology

DIODE GEN PURP 500V 3A B SQ-MELF

Package: -

Request a Quote
RB068MM100TR
Rohm Semiconductor

DIODE SCHOTTKY 100V 2A PMDU

Package: -

Stock179,925
JANTX1N3913
Microchip Technology

DIODE GEN PURP 400V 30A DO5

Package: -

Request a Quote
ES1JHL-TP
Micro Commercial Co

RECTIFIERS

Package: -

Request a Quote
EGF1DHE3_A-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 1A DO214BA

Package: -

Request a Quote
TRS10A65F-S1Q
Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 10A TO220F

Package: -

Request a Quote
VS-45EPS16L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.6KV 45A TO247AD

Package: -

Stock4,182

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC06D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 5A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock3,280	1200V	5A (DC)	2.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
CDBA120SL-HF	Comchip Technology	DIODE SCHOTTKY 20V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 330mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 100°C	Package: DO-214AC, SMA	Stock2,144	20V	1A (DC)	330mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	160pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 100°C
VS-SD1500C16L	Vishay Semiconductor Diodes Division	DIODE MODULE 1.6KV 1600A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 1600A Voltage - Forward (Vf) (Max) @ If: 1.64V @ 3000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	Package: DO-200AB, B-PUK	Stock5,952	1600V	1600A	1.64V @ 3000A	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 1600V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
UFS540G/TR13	Microsemi Corporation	DIODE GEN PURP 400V 5A DO215AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-215AB, SMC Gull Wing	Stock7,424	400V	5A	1.2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
SFAF805G C0G	TSC America Inc.	DIODE, SUPER FAST, 8A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack	Stock7,488	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HER307GT-G	Comchip Technology	DIODE GEN PURP 800V 3A DO201AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AA, DO-27, Axial	Stock6,368	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	-55°C ~ 150°C
SS115LHRTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock4,560	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAT54LP-7B	Diodes Incorporated	DIODE SCHOTTKY 30V 200MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-UFDFN Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 125°C	Package: 2-UFDFN	Stock3,952	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	2-UFDFN	X1-DFN1006-2	-65°C ~ 125°C
CDSUR400B	Comchip Technology	DIODE GEN PURP 80V 100MA 0603 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603/SOD-523F Operating Temperature - Junction: 125°C (Max)	Package: 2-SMD, No Lead	Stock6,528	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 80V	3pF @ 0.5V, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	125°C (Max)
1SS413CT,L3F	Toshiba Semiconductor and Storage	DIODE SW SCHOTT 20V 50MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 50mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 20V Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: SOD-882 Operating Temperature - Junction: -55°C ~ 125°C	Package: SOD-882	Stock5,120	20V	50mA	550mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 20V	3.9pF @ 0V, 1MHz	Surface Mount	SOD-882	SOD-882	-55°C ~ 125°C
SS36-E3/57T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock1,464,084	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
PMEG4010EH,115	Nexperia USA Inc.	DIODE SCHOTTKY 40V 1A SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 640mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 50pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C (Max)	Package: SOD-123F	Stock3,776	40V	1A (DC)	640mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	50pF @ 1V, 1MHz	Surface Mount	SOD-123F	SOD-123F	150°C (Max)
DB2J31600L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA SMINI2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 800ps Current - Reverse Leakage @ Vr: 15µA @ 30V Capacitance @ Vr, F: 2pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SMini2-F5-B Operating Temperature - Junction: 125°C (Max)	Package: SC-90, SOD-323F	Stock265,848	30V	100mA	550mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	800ps	15µA @ 30V	2pF @ 10V, 1MHz	Surface Mount	SC-90, SOD-323F	SMini2-F5-B	125°C (Max)
JANS1N5419US	Microchip Technology	DIODE GEN PURP 500V 3A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	-	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
RB068MM100TR	Rohm Semiconductor	DIODE SCHOTTKY 100V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 870 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 nA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	Package: -	Stock179,925	100 V	2A	870 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 nA @ 100 V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
JANTX1N3913	Microchip Technology	DIODE GEN PURP 400V 30A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	400 V	30A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 150°C
ES1JHL-TP	Micro Commercial Co	RECTIFIERS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	8pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HL	-55°C ~ 150°C
EGF1DHE3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	2 µA @ 200 V	15pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
TRS10A65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARB 650V 10A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 36pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: 175°C (Max)	Package: -	Request a Quote	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	36pF @ 650V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F-2L	175°C (Max)
VS-45EPS16L-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.6KV 45A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 45 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock4,182	1600 V	45A	1.16 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
RKR0303AKJ-R6	Renesas Electronics Corporation	DIODE SCHOTTKY 30V 300MA 2UFP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 420 mV @ 300 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: 2-UFP Operating Temperature - Junction: 125°C (Max)	Package: -	Request a Quote	30 V	300mA	420 mV @ 300 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Surface Mount	SC-79, SOD-523	2-UFP	125°C (Max)
TUAS6KH	Taiwan Semiconductor Corporation	6A, 800V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 39pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: SMPC4.6U Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock18,000	800 V	6A	1.1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 800 V	39pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	SMPC4.6U	-55°C ~ 150°C
1N1348B	Microchip Technology	DIODE GEN PURP 600V 6A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	600 V	6A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 200°C
YQ3MM10BTR	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 100 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 175°C	Package: -	Stock9,000	100 V	3A	770 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 µA @ 100 V	60pF @ 4V, 1MHz	Surface Mount	SOD-123F	PMDU	175°C
CDBQR0240LR-HF	Comchip Technology	DIODE SCHOTTKY 40V 200MA 0402C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 40 V Capacitance @ Vr, F: 25pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 0402C/SOD-923F Operating Temperature - Junction: -40°C ~ 125°C	Package: -	Request a Quote	40 V	200mA	580 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	25pF @ 1V, 1MHz	Surface Mount	0402 (1006 Metric)	0402C/SOD-923F	-40°C ~ 125°C
S8JS-E3-I	Vishay General Semiconductor - Diodes Division	8A, 600V, STD RECT , SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Speed: Standard Recovery > 500ns, > 2A (Io) Reverse Recovery Time (trr): 3.4 µs Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 63pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock21,000	600 V	8A	985 mV @ 8 A	Standard Recovery > 500ns, > 2A (Io)	3.4 µs	10 µA @ 600 V	63pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SMBV1094LT1	onsemi	SS SOT23 TUNE DIO SPCL TR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANS1N6643	Microchip Technology	DIODE GEN PURP 50V 300MA D-5D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 500 nA @ 150 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, D Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 150 V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C