Page 54 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SK18E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 80V 1A DO214AA

Package: DO-214AA, SMB

Stock4,528
SSC53LHE3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5A DO214AB

Package: DO-214AB, SMC

Stock4,368
FR1M-13-F
Diodes Incorporated

DIODE GEN PURP 1KV 1A SMB

Package: DO-214AA, SMB

Stock420,000
1N3293A
Powerex Inc.

DIODE GEN PURP 600V 100A DO205AA

Package: DO-205AA, DO-8, Stud

Stock6,656
MBRS1645 MNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,312
S4PKHM3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 4A TO277A

Package: TO-277, 3-PowerDFN

Stock4,384
EM01V0
Sanken

DIODE GEN PURP 400V 1A AXIAL

Package: Axial

Stock6,512
BYG10K-E3/TR3
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A

Package: DO-214AC, SMA

Stock674,400
2A01GHB0G
TSC America Inc.

DIODE, 2A, 50V, AEC-Q101, DO-15

Package: DO-204AC, DO-15, Axial

Stock3,376
FR205G R0G
TSC America Inc.

DIODE, FAST, 2A, 600V, 250NS, DO

Package: DO-204AC, DO-15, Axial

Stock7,312
V20PW12HM3/I
Vishay Semiconductor Diodes Division

RECT SCHKY 20A 120V SLIMDPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,720
RB160L-60TE25
Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDS

Package: DO-214AC, SMA

Stock824,856
1PS76SB10,115
Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOD323

Package: SC-76, SOD-323

Stock2,944
1N6621US
Microsemi Corporation

DIODE GEN PURP 440V 1.2A A-MELF

Package: SQ-MELF, A

Stock8,076
DB2460200L
Panasonic Electronic Components

DIODE SCHOTTKY 60V 3A TMINIP2

Package: SOD-128

Stock23,358
STPS5L60SF
STMicroelectronics

DIODE SCHOTTKY 60V 5A TO277A

Package: -

Stock21,429
PDS340-13-2477
Diodes Incorporated

DIODE

Package: -

Request a Quote
DR7304-TR
Microchip Technology

UFR,FRR

Package: -

Request a Quote
1N5822H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 3A DO201AD

Package: -

Request a Quote
1N3662R
Microchip Technology

DIODE GEN PURP REV 300V 35A DO21

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SK18E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 80V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMBJ) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AA, SMB	Stock4,528	80V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMBJ)	-65°C ~ 175°C
SSC53LHE3/9AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AB, SMC	Stock4,368	30V	5A	450mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 150°C
FR1M-13-F	Diodes Incorporated	DIODE GEN PURP 1KV 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AA, SMB	Stock420,000	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
1N3293A	Powerex Inc.	DIODE GEN PURP 600V 100A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 17mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	Package: DO-205AA, DO-8, Stud	Stock6,656	600V	100A	1.5V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	17mA @ 600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
MBRS1645 MNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,312	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
S4PKHM3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock4,384	800V	4A	1.1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	2.5µs	10µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
EM01V0	Sanken	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 970mV @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock6,512	400V	1A	970mV @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
BYG10K-E3/TR3	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock674,400	800V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 800V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
2A01GHB0G	TSC America Inc.	DIODE, 2A, 50V, AEC-Q101, DO-15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock3,376	50V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR205G R0G	TSC America Inc.	DIODE, FAST, 2A, 600V, 250NS, DO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock7,312	600V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
V20PW12HM3/I	Vishay Semiconductor Diodes Division	RECT SCHKY 20A 120V SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.02V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 120V Capacitance @ Vr, F: 1350pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,720	120V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 120V	1350pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 150°C
RB160L-60TE25	Rohm Semiconductor	DIODE SCHOTTKY 60V 1A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	Package: DO-214AC, SMA	Stock824,856	60V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
1PS76SB10,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max)	Package: SC-76, SOD-323	Stock2,944	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C (Max)
1N6621US	Microsemi Corporation	DIODE GEN PURP 440V 1.2A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 440V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 500nA @ 440V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	Package: SQ-MELF, A	Stock8,076	440V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 440V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
DB2460200L	Panasonic Electronic Components	DIODE SCHOTTKY 60V 3A TMINIP2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36ns Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 106pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: TMiniP2-F2-B Operating Temperature - Junction: 125°C (Max)	Package: SOD-128	Stock23,358	60V	3A (DC)	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	36ns	150µA @ 60V	106pF @ 10V, 1MHz	Surface Mount	SOD-128	TMiniP2-F2-B	125°C (Max)
STPS5L60SF	STMicroelectronics	DIODE SCHOTTKY 60V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 470 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: 150°C (Max)	Package: -	Stock21,429	60 V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	470 µA @ 60 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	150°C (Max)
PDS340-13-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	40 V	3A	490 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-65°C ~ 150°C
DR7304-TR	Microchip Technology	UFR,FRR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N5822H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	40 V	3A	525 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
1N3662R	Microchip Technology	DIODE GEN PURP REV 300V 35A DO21 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 35 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Press Fit Package / Case: DO-208AA Supplier Device Package: DO-21 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	300 V	35A	1.1 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 300 V	-	Press Fit	DO-208AA	DO-21	-65°C ~ 175°C
NSR05T404MX2T5G	onsemi	DIODE SCHOTTKY 40V 500MA 2X2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 630 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 13 ns Current - Reverse Leakage @ Vr: 85 µA @ 40 V Capacitance @ Vr, F: 50pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: 2-X2DFN (1x0.6) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock23,076	40 V	500mA	630 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	13 ns	85 µA @ 40 V	50pF @ 1V, 1MHz	Surface Mount	2-XDFN	2-X2DFN (1x0.6)	-55°C ~ 150°C
CDLL5711-TR	Microchip Technology	DIODE SCHOTTKY 50V 33MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 33mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Stock303	50 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
UGF8JH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A Speed: - Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 30 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock3,000	600 V	8A	2.9 V @ 8 A	-	25 ns	30 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
RS1KFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock84,000	800 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RURDG1560	Harris Corporation	ULTRAFAST DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS22B	NextGen Components	DIODE SCHOTTKY 20V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 220pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -50°C ~ 125°C	Package: -	Request a Quote	20 V	2A	-	-	-	-	220pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-50°C ~ 125°C
JANS1N6642UB-TR	Microchip Technology	DIODE GEN PURP UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	-	5pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	UB	-
SF58G-TP	Micro Commercial Co	DIODE GEN PURP 600V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	600 V	5A	1.75 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C