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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AB, SMC |
Stock7,008 |
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30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 10A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,472 |
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30V | 10A | 520mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,176 |
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1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 310ns
- Current - Reverse Leakage @ Vr: 100µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,464 |
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1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -40°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 10A 100V PWRMITE
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,632 |
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- | - | - | - | - | - | - | - | - | - | - |
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Nexperia USA Inc. |
DIODE SCHOTTKY 50V 15A CFP15
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 100µA @ 50V
- Capacitance @ Vr, F: 800pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Leads
- Supplier Device Package: CFP15
- Operating Temperature - Junction: 175°C (Max)
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Package: 3-SMD, Flat Leads |
Stock2,000 |
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50V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 50V | 800pF @ 10V, 1MHz | Surface Mount | 3-SMD, Flat Leads | CFP15 | 175°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 15A TO220-2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.6V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -
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Package: TO-220-2 |
Stock12,372 |
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600V | 15A | 2.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | - |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA LL34
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock78,228 |
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100V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 45V 15A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 |
Stock8,976 |
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45V | 15A | 840mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Diodes Incorporated |
DIODE SCHOTTKY 100V 1A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AA, SMB |
Stock7,764 |
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100V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 600V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock126,222 |
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600V | 1A | 1.35V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 5µA @ 600V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 800V 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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800 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 40pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 1KV 150A DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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1000 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1000 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 60V 2A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 480 µA @ 60 V
- Capacitance @ Vr, F: 255pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock996 |
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60 V | 2A | 600 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 480 µA @ 60 V | 255pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -40°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 400V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 8A | 1.25 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 400 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -40°C ~ 150°C |
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Microchip Technology |
DIODE SCHOTTKY 45V 150A THINKEY3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 760 mV @ 150 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: ThinKey™3
- Supplier Device Package: ThinKey™3
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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45 V | 150A | 760 mV @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | - | Surface Mount | ThinKey™3 | ThinKey™3 | -55°C ~ 150°C |
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Diodes Incorporated |
HIVOLT SWITCHING DIODE BVR > 100
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 225mA
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 240 V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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300 V | 225mA | 1.15 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 240 V | 5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
1A, 800V, STANDARD RECOVERY RECT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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800 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.8 µs | 5 µA @ 800 V | 9pF @ 4V, 1MHz | Surface Mount | SOD-123 | Sub SMA | -55°C ~ 175°C |
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Diotec Semiconductor |
IC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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60 V | 5A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -50°C ~ 150°C |
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Comchip Technology |
DIODE GP 50V 5A SMB/DO-214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB/DO-214AA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 5A | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | - | Surface Mount | DO-214AA, SMB | SMB/DO-214AA | -55°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 20 V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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20 V | 5A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | 200pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 40V 1A SOD123F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 40 V
- Capacitance @ Vr, F: 69pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: 150°C
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Package: - |
Stock2,718 |
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40 V | 1A | 570 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 40 V | 69pF @ 1V, 1MHz | Surface Mount | SOD-123F | SOD-123F | 150°C |
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Microchip Technology |
DIODE GEN PURP 175V 100MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 175 V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 175 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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175 V | 100mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 175 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 60V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock45,309 |
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60 V | 10A | 790 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 60 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GP 400V 500MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA (GL34)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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400 V | 500mA | 1.35 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Diotec Semiconductor |
DIODE GEN PURP 200V 20A P600
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P600
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 20A | 1.1 V @ 20 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 200 V | - | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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SMC Diode Solutions |
DIODE SIL CARB 650V 20A TO247AD
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock240 |
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650 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 1190pF @ 0V, 1MHz | Through Hole | TO-247-3 | TO-247AD | -55°C ~ 175°C |
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Vishay |
8A, 600V, STD RECT , SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1.6A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.6 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 72pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 1.6A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 3.6 µs | 10 µA @ 600 V | 72pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |