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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 8A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 280µA @ 80V
- Capacitance @ Vr, F: 500pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,912 |
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80V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 80V | 500pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock16,608 |
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35V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 18A D2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 18A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.5mA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,636 |
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35V | 18A | 600mV @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.5mA @ 35V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 85A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock7,392 |
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600V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 120V 12A 5DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 830mV @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 75µA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN, 5 Leads
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: 8-PowerTDFN, 5 Leads |
Stock5,200 |
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120V | 12A | 830mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 75µA @ 120V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 40V 1A AXIAL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock3,600 |
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40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 2µA @ 100V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AA, SMB |
Stock2,800 |
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100V | 2A | 930mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 2A, 400V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 35pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock5,632 |
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400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 35pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 160°C
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Package: DO-204AL, DO-41, Axial |
Stock6,528 |
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600V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 160°C |
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TSC America Inc. |
DIODE, FAST, 1A, 600V, 200NS, DO
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock5,296 |
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600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-219AB |
Stock7,552 |
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40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock3,472 |
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50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 600V 8A D2PAK
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: 450pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,416 |
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600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 450pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 60V 2A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AC, SMA |
Stock4,464 |
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60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 120pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 18pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock505,440 |
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50V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 50V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Diodes Incorporated |
RECT GP 1000V 1A SOD123F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123F |
Stock22,140 |
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1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 15V 25A D2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 25A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 15V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: 100°C (Max)
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock131,916 |
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15V | 25A | 450mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15mA @ 15V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 100°C (Max) |
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Panasonic Electronic Components |
DIODE GEN PURP 80V 100MA SMINI2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3ns
- Current - Reverse Leakage @ Vr: 100nA @ 75V
- Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SMini2-F5-B
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-90, SOD-323F |
Stock23,087,796 |
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80V | 100mA (DC) | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3ns | 100nA @ 75V | 1.2pF @ 0V, 1MHz | Surface Mount | SC-90, SOD-323F | SMini2-F5-B | 150°C (Max) |
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Microchip Technology |
DIODE GEN PURP 800V 100A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 mA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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800 V | 100A | 1.55 V @ 310 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 800 V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Diodes Incorporated |
SILICON CARBIDE RECTIFIER TO252
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 230 µA @ 650 V
- Capacitance @ Vr, F: 348pF @ 100mV, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (Type WX)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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650 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 230 µA @ 650 V | 348pF @ 100mV, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (Type WX) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A SOD128
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock20,970 |
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200 V | 2A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | 12pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 1KV 1A D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 500 nA @ 1 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1 V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
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Taiwan Semiconductor Corporation |
35NS, 8A, 200V, SUPER FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock3,000 |
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200 V | 8A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 100pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GENERAL PURPOSE SOT23
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
600 V | 8A | 1.5 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | 50pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
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Solid State Inc. |
DIODE GEN PURP REV 500V 16A DO4
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
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500 V | 16A | 1.3 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 500 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
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Taiwan Semiconductor Corporation |
75NS, 1A, 1000V, HIGH EFFICIENT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock59,910 |
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1000 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 1 µA @ 1000 V | 7pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 1A SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 12 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 30 V
- Capacitance @ Vr, F: 25pF @ 25V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: 125°C (Max)
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Package: - |
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40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 12 ns | 100 µA @ 30 V | 25pF @ 25V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 125°C (Max) |