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Diodes Incorporated |
DIODE SCHOTTKY 100V 5A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: 400pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock7,648 |
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100V | 5A | 800mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 400pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SW 50V 40MA DO7
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 40mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 100µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AA, DO-7, Axial
- Supplier Device Package: DO-7
- Operating Temperature - Junction: -65°C ~ 100°C
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Package: DO-204AA, DO-7, Axial |
Stock3,600 |
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50V | 40mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 300ns | 100µA @ 50V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 100°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 30V 240A HALF-PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 240A
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 240A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20mA @ 30V
- Capacitance @ Vr, F: 14800pF @ 5V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: D-67 HALF-PAK
- Supplier Device Package: HALF-PAK
- Operating Temperature - Junction: -
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Package: D-67 HALF-PAK |
Stock4,736 |
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30V | 240A | 510mV @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20mA @ 30V | 14800pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | HALF-PAK | - |
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Powerex Inc. |
DIODE MODULE 3.6KV 1200A DO200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3600V
- Current - Average Rectified (Io): 1200A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25µs
- Current - Reverse Leakage @ Vr: 150mA @ 3600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -
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Package: DO-200AA, A-PUK |
Stock6,560 |
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3600V | 1200A | 1.45V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 25µs | 150mA @ 3600V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, R62 | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 180ns
- Current - Reverse Leakage @ Vr: 100µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC Modified
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-247-2 |
Stock6,784 |
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400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-247-3 |
Stock4,880 |
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600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-247-3 | TO-247-3 | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE SBR 60V 20A POWERDI5
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 180µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: PowerDI? 5
- Supplier Device Package: PowerDI?5
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: PowerDI? 5 |
Stock6,016 |
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60V | 20A | 570mV @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 180µA @ 60V | - | Surface Mount | PowerDI? 5 | PowerDI?5 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 8A 120V TO-277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock1,189,200 |
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120V | 8A | 840mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AB, MELF (Glass) |
Stock3,376 |
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1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, FAST, 0.5A, 1000V, 500NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock6,560 |
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- | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, 1.5A, 600V, AEC-Q101, DO-
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock7,744 |
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600V | 1.5A | 1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 500nA @ 25V
- Capacitance @ Vr, F: 7pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-76, SOD-323 |
Stock3,584 |
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30V | 200mA (DC) | 650mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 125°C (Max) |
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TSC America Inc. |
DIODE, SCHOTTKY, TRENCH, 30A, 60
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-3 |
Stock6,896 |
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60V | 15A | 580mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO220AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-220AA |
Stock606,480 |
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200V | 2A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 16A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 145pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock16,164 |
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600V | 16A | 1.5V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 145pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 3A 100V SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: 250pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock6,128 |
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100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 200MA ESC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 30V
- Capacitance @ Vr, F: 26pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-79, SOD-523 |
Stock6,176 |
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30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 30V | 26pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | 125°C (Max) |
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Panasonic Electronic Components |
DIODE SCHOTTKY 20V 35MA SSSMINI2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 35mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 35mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200nA @ 15V
- Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: SSSMini2-F2
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, Flat Lead |
Stock105,912 |
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20V | 35mA (DC) | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 15V | 1.2pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | SSSMini2-F2 | 125°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 350V 20A LPDS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 350 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 350 V
- Capacitance @ Vr, F: 412pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPDS
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock921 |
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350 V | 20A | 1.35 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 350 V | 412pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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IXYS |
DIODE GEN PURP 1.6KV 10A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock420 |
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1600 V | 10A | 1.26 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | 4pF @ 400V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 60V 2A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 60 V
- Capacitance @ Vr, F: 250pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock2,907 |
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60 V | 2A | 630 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 60 V | 250pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -40°C ~ 175°C |
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Diotec Semiconductor |
DIODE SCHOTT 90V 1A MELF DO213AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 90 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: MELF DO-213AB (Plastic)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Stock5,034 |
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90 V | 1A | 790 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 90 V | - | Surface Mount | DO-213AB, MELF | MELF DO-213AB (Plastic) | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
1005, 45V, 0.03A, SCHOTTKY DIODE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 30mA
- Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 40 V
- Capacitance @ Vr, F: 1.5pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 1005 (2512 Metric)
- Supplier Device Package: 1005
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
Request a Quote |
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45 V | 30mA | 370 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 1 µA @ 40 V | 1.5pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -40°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 16A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 130pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock2,994 |
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200 V | 16A | 975 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 130pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 100V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (HSMA)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (HSMA) | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 1A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Diotec Semiconductor |
IC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
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60 V | 12A | 680 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Through Hole | Axial | Axial | -50°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 150V 20A DO203AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Capacitance @ Vr, F: 300pF @ 10V, 1MHz
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA (DO-4)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
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150 V | 20A | 950 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | 300pF @ 10V, 1MHz | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |