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Microsemi Corporation |
DIODE GEN PURP 225V 500MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock5,360 |
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225V | 500mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
MOD DIODE MAP COMPRESSED
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,552 |
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- | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 10A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 40V
- Capacitance @ Vr, F: 400pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 |
Stock18,792 |
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40V | 10A | 840mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 400pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 45V 180A HALF-PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 180A
- Voltage - Forward (Vf) (Max) @ If: 660mV @ 180A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 45V
- Capacitance @ Vr, F: 7800pF @ 5V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: D-67 HALF-PAK
- Supplier Device Package: HALF-PAK
- Operating Temperature - Junction: -
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Package: D-67 HALF-PAK |
Stock3,392 |
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45V | 180A | 660mV @ 180A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15mA @ 45V | 7800pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | HALF-PAK | - |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 50A DO5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock8,784 |
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30V | 50A | 700mV @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 4A, 150V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock6,832 |
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150V | 4A | 1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock3,680 |
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200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 27ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock6,784 |
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150V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 27ns | 10µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, 3A, 200V, AEC-Q101, DO-21
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock5,312 |
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200V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE GEN PURP 200V 1A SOD123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 200nA @ 200V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD123W
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123W |
Stock7,440 |
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200V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 200nA @ 200V | 17pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 100V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock4,528 |
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100V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 200MA SOD80
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Capacitance @ Vr, F: 8pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: SOD-80 QuadroMELF
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SOD-80 Variant |
Stock7,056 |
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50V | 200mA | 900mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 8pF @ 1V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 2A 600V DO-214AA SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.6A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.1µs
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock4,704 |
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600V | 1.6A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2.1µs | 5µA @ 600V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 40V 3A SOD123FA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: 170pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123FA
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SOD-123W |
Stock39,000 |
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40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 170pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123FA | -55°C ~ 125°C |
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WeEn Semiconductors |
DIODE GEN PURP 200V 8A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220FP
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock32,934 |
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200V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | 150°C (Max) |
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Power Integrations |
DIODE SCHOTTKY 300V 6A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 11.5ns
- Current - Reverse Leakage @ Vr: 25µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 |
Stock48,900 |
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300V | 6A | 1.9V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 11.5ns | 25µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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Diodes Incorporated |
DIODE GEN PURP 50V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock37,800 |
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50V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 220V 1.75A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 220 V
- Current - Average Rectified (Io): 1.75A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 220 V
- Capacitance @ Vr, F: 40pF @ 10V, 1MHz
- Mounting Type: Through Hole
- Package / Case: E, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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220 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
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Panjit International Inc. |
DIODE SIL CARB 650V 12A TO220AC
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 80 µA @ 650 V
- Capacitance @ Vr, F: 452pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock6,000 |
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650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 452pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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800 V | 4A | 1.85 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Harris Corporation |
DIODE AVALANCHE 500V 50A TO218
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 500 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: TO-218-1
- Supplier Device Package: TO-218
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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500 V | 50A | 1.6 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 500 µA @ 500 V | - | Chassis Mount | TO-218-1 | TO-218 | -65°C ~ 175°C |
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Microchip Technology |
DIODE SCHOTTKY 45V 30A DO4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
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45 V | 30A | 630 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 45 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -55°C ~ 175°C |
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Panjit International Inc. |
650V/8A THROUGH HOLE SILICON CAR
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 650 V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock6,000 |
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650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
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WeEn Semiconductors |
DIODE SIL CARBIDE 650V 10A DPAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 323pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 323pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 600 V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBF
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
200 V | 2A | 920 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 200 V | 25pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 200V 5A SMBF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBF
- Operating Temperature - Junction: -55°C ~ 150°C
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200 V | 5A | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 75 V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 1.5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 150°C |