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Infineon Technologies |
TRANS RF NPN 45GHZ 4.7V TSFP4
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 45GHz
- Noise Figure (dB Typ @ f): 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
- Gain: 10dB ~ 29dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
|
Package: 4-SMD, Flat Leads |
Stock2,176 |
|
4.7V | 45GHz | 0.5dB ~ 1.3dB @ 150MHz ~ 10GHz | 10dB ~ 29dB | 100mW | 160 @ 15mA, 3V | 30mA | 150°C (TJ) | Surface Mount | 4-SMD, Flat Leads | 4-TSFP |
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Infineon Technologies |
TRANS RF NPN 1.8GHZ 4.0V SOT343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.7V
- Frequency - Transition: 46GHz
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
- Gain: 24dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 30mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
|
Package: SC-82A, SOT-343 |
Stock3,568 |
|
4.7V | 46GHz | 0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz | 24dB | 200mW | 180 @ 30mA, 3V | 50mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | PG-SOT343-4 |
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Infineon Technologies |
TRANSISTOR NPN RF 12V SOT-343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 13.5dB ~ 20.5dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
|
Package: SC-82A, SOT-343 |
Stock5,584 |
|
12V | 8GHz | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | 13.5dB ~ 20.5dB | 580mW | 70 @ 30mA, 8V | 80mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | PG-SOT343-4 |
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Microsemi Corporation |
TRANS NPN 16V 200MA SO8
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 16V
- Frequency - Transition: 870MHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB ~ 9.5dB
- Power - Max: 2.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock262,680 |
|
16V | 870MHz | - | 8dB ~ 9.5dB | 2.2W | 30 @ 50mA, 5V | 200mA | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Toshiba Semiconductor and Storage |
TRANS RF NPN 12V 500MHZ USQ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1dB @ 500MHz
- Gain: 18dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: USQ
|
Package: SC-82A, SOT-343 |
Stock5,760 |
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12V | 7GHz | 1dB @ 500MHz | 18dB | 100mW | 80 @ 20mA, 10V | 80mA | 125°C (TJ) | Surface Mount | SC-82A, SOT-343 | USQ |
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Microsemi Corporation |
TRANS RF BIPO 15W 1.25A 55FT-5
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 24V
- Frequency - Transition: 470MHz ~ 860MHz
- Noise Figure (dB Typ @ f): -
- Gain: 11.5dB
- Power - Max: 15W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 200mA, 5V
- Current - Collector (Ic) (Max): 1.25A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis, Stud Mount
- Package / Case: 55FT
- Supplier Device Package: 55FT
|
Package: 55FT |
Stock5,376 |
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24V | 470MHz ~ 860MHz | - | 11.5dB | 15W | 15 @ 200mA, 5V | 1.25A | 200°C (TJ) | Chassis, Stud Mount | 55FT | 55FT |
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Intersil |
IC TRANS ARRAY NPN/PNP 16-SOIC
- Transistor Type: 3 NPN + 2 PNP
- Voltage - Collector Emitter Breakdown (Max): 12V, 15V
- Frequency - Transition: 8GHz, 5.5GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
|
Package: 16-SOIC (0.154", 3.90mm Width) |
Stock4,816 |
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12V, 15V | 8GHz, 5.5GHz | 3.5dB @ 1GHz | - | 150mW | 40 @ 10mA, 2V / 20 @ 10mA, 2V | 65mA | 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Fairchild/ON Semiconductor |
TRANSISTOR RF NPN 15V 50MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 6dB @ 60MHz
- Gain: 15dB
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,872 |
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15V | - | 6dB @ 60MHz | 15dB | 350mW | 50 @ 8mA, 10V | 50mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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CEL |
RF TRANSISTOR NPN SOT-343F
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 12GHz
- Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
- Gain: 13.5dB
- Power - Max: 205mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: SOT-343F
|
Package: SOT-343F |
Stock7,392 |
|
6V | 12GHz | 1.7dB @ 2GHz | 13.5dB | 205mW | 75 @ 30mA, 3V | 100mA | 150°C (TJ) | Surface Mount | SOT-343F | SOT-343F |
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NXP |
TRANS NPN 5V 5GHZ SOT143B
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
- Gain: -
- Power - Max: 32mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
- Current - Collector (Ic) (Max): 6.5mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
|
Package: TO-253-4, TO-253AA |
Stock6,160 |
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5V | 5GHz | 1.8dB ~ 2dB @ 1GHz | - | 32mW | 50 @ 500µA, 1V | 6.5mA | 175°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143B |
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Microsemi Corporation |
TRANS RF BIPO 7W 250MA 55FW1
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): 50V
- Frequency - Transition: 960MHz ~ 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8.24dB ~ 11dB
- Power - Max: 7W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Current - Collector (Ic) (Max): 250mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55FW-1
- Supplier Device Package: 55FW-1
|
Package: 55FW-1 |
Stock5,536 |
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50V | 960MHz ~ 1.215GHz | - | 8.24dB ~ 11dB | 7W | 20 @ 100mA, 5V | 250mA | 200°C (TJ) | Chassis Mount | 55FW-1 | 55FW-1 |
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Microsemi Corporation |
TRANS RF BIPO 60W 5A M113
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 35V
- Frequency - Transition: 175MHz
- Noise Figure (dB Typ @ f): -
- Gain: 7.6dB
- Power - Max: 60W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Current - Collector (Ic) (Max): 5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M113
- Supplier Device Package: M113
|
Package: M113 |
Stock3,648 |
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35V | 175MHz | - | 7.6dB | 60W | 20 @ 500mA, 5V | 5A | 200°C (TJ) | Chassis Mount | M113 | M113 |
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Maxim Integrated |
TRANS RF NPN 900MHZ 15V 8SOIC
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1GHz
- Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
- Gain: 11.6dB
- Power - Max: 6.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
- Current - Collector (Ic) (Max): 1.2A
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
|
Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock3,648 |
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15V | 1GHz | 3.3dB @ 836MHz | 11.6dB | 6.4W | 100 @ 250mA, 3V | 1.2A | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Broadcom Limited |
TRANS NPN BIPO 5.5V 16MA SOT-23
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.5V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
- Gain: 9dB ~ 11dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
- Current - Collector (Ic) (Max): 16mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,527,520 |
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5.5V | - | 0.9dB ~ 1.2dB @ 900MHz | 9dB ~ 11dB | 150mW | 70 @ 1mA, 2.7V | 16mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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NXP |
TRANS RF NPN 12V 50MA SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
- Gain: 12dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
|
Package: SC-70, SOT-323 |
Stock7,120 |
|
12V | 11GHz | 1.3dB @ 1.8GHz | 12dB | 450mW | 60 @ 15mA, 8V | 50mA | -40°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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ON Semiconductor |
TRANS NPN BIPO 70MA 10V SSFP
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 4.5GHz ~ 5.5GHz
- Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
- Gain: 11dB ~ 19dB @ 1GHz ~ 400MHz
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-81
- Supplier Device Package: 3-SSFP
|
Package: SC-81 |
Stock2,992 |
|
10V | 4.5GHz ~ 5.5GHz | 1.9dB @ 1GHz | 11dB ~ 19dB @ 1GHz ~ 400MHz | 250mW | 100 @ 10mA, 5V | 70mA | 150°C (TJ) | Surface Mount | SC-81 | 3-SSFP |
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M/A-Com Technology Solutions |
TRANS NPN 90W 960MHZ-1215MHZ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 70V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 10.8dB
- Power - Max: 90W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V
- Current - Collector (Ic) (Max): 6A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: 332A-03
- Supplier Device Package: 332A-03, Style 1
|
Package: 332A-03 |
Stock4,784 |
|
70V | - | - | 10.8dB | 90W | 10 @ 2.5A, 5V | 6A | - | Chassis Mount | 332A-03 | 332A-03, Style 1 |
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|
M/A-Com Technology Solutions |
TRANS NPN 120W 960MHZ-1215MHZ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 8.5dB
- Power - Max: 120W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
- Current - Collector (Ic) (Max): 15A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 355C-02
- Supplier Device Package: 355C-02, Style 1
|
Package: 355C-02 |
Stock6,120 |
|
55V | - | - | 8.5dB | 120W | 20 @ 5A, 5V | 15A | 200°C (TJ) | Chassis Mount | 355C-02 | 355C-02, Style 1 |
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|
NXP |
TRANS RF NPN 12V 60MA SOT89-3
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 10.5GHz
- Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
- Gain: 8.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
|
Package: TO-243AA |
Stock20,412 |
|
12V | 10.5GHz | 1.3dB @ 1.8GHz | 8.5dB | 1W | 60 @ 30mA, 8V | 60mA | -40°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Panasonic Electronic Components |
TRANS NPN 8VCEO 50MA S-MINI 3P
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2mA, 4V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
|
Package: SC-70, SOT-323 |
Stock21,894 |
|
8V | 1.1GHz | - | - | 150mW | 100 @ 2mA, 4V | 50mA | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SMini3-G1 |
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Diodes Incorporated |
TRANS NPN VHF/UHF 25V SOT23-3
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 25V
- Frequency - Transition: 650MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock844,500 |
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25V | 650MHz | - | - | 300mW | 60 @ 4mA, 10V | 50mA | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Infineon Technologies |
RF TRANSISTOR, NPN
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 15dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-4
|
Package: - |
Request a Quote |
|
12V | 8GHz | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | 15dB | 580mW | 70 @ 30mA, 8V | 80mA | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3-4 |
|
|
MACOM Technology Solutions |
TRANS RF NPN 17A 200MA 244A-01
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 17V
- Frequency - Transition: 5.5GHz
- Noise Figure (dB Typ @ f): 3dB @ 0.5GHz
- Gain: 13dB
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: 244A-01
- Supplier Device Package: 244A-01, STYLE 1
|
Package: - |
Request a Quote |
|
17V | 5.5GHz | 3dB @ 0.5GHz | 13dB | - | 50 @ 50mA, 5V | 200mA | 200°C (TJ) | Stud Mount | 244A-01 | 244A-01, STYLE 1 |
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|
Central Semiconductor Corp |
RF TRANS NPN 30V 500MHZ TO39
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: 10dB
- Power - Max: 5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
|
Package: - |
Request a Quote |
|
30V | 500MHz | - | 10dB | 5W | 10 @ 50mA, 5V | 400mA | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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|
Renesas Electronics Corporation |
NPN HIGH FREQPOWER AMP
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Microsemi Corporation |
RF POWER TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Sanyo |
NPN EPITAXIAL PLANAR SILICON
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Ampleon USA Inc. |
RF POWER BIPOLAR TRANSISTOR, 1-E
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 1.215GHz
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 150W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 3A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-443A
- Supplier Device Package: SOT443A
|
Package: - |
Request a Quote |
|
20V | 1.215GHz | - | 8dB | 150W | - | 3A | 200°C (TJ) | Chassis Mount | SOT-443A | SOT443A |