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Infineon Technologies |
TRANSISTOR RF NPN 12V SOT-223
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 10.5dB ~ 16dB
- Power - Max: 600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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Package: TO-261-4, TO-261AA |
Stock4,000 |
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12V | 8GHz | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz | 10.5dB ~ 16dB | 600mW | 70 @ 30mA, 8V | 80mA | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 |
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Microsemi Corporation |
TRANS RF NPN 1W 400MA TO39
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 30V
- Frequency - Transition: 400MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
- Current - Collector (Ic) (Max): 400mA
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: TO-205AD, TO-39-3 Metal Can |
Stock15,828 |
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30V | 400MHz | - | - | 1W | 25 @ 50mA, 5V | 400mA | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Fairchild/ON Semiconductor |
TRANS RF PNP 20V 50MA TO-92
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,888 |
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20V | 600MHz | - | - | 350mW | 60 @ 5mA, 10V | 50mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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CEL |
RF TRANSISTOR NPN SOT-343F
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.3V
- Frequency - Transition: 15GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
- Gain: 14dB
- Power - Max: 190mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: SOT-343F
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Package: SOT-343F |
Stock3,664 |
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3.3V | 15GHz | 1.2dB @ 2GHz | 14dB | 190mW | 50 @ 10mA, 2V | 100mA | 150°C (TJ) | Surface Mount | SOT-343F | SOT-343F |
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Intersil |
IC TRANS ARRAY NPN DIFF 14-SOIC
- Transistor Type: 5 NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
- Gain: -
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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Package: 14-SOIC (0.154", 3.90mm Width) |
Stock7,648 |
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12V | 8GHz | 3.5dB @ 1GHz | - | 150mW | 40 @ 10mA, 2V | 65mA | 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Fairchild/ON Semiconductor |
TRANSISTOR NPN 20V 20MA TO-92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
- Gain: -
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock24,000 |
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20V | 600MHz | 3dB ~ 5dB @ 100MHz | - | 250mW | 120 @ 1mA, 6V | 20mA | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANSISTOR NPN 20V 20MA TO-92S
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 20V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
- Gain: 18dB ~ 22dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock4,432 |
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20V | 600MHz | 3dB ~ 5dB @ 100MHz | 18dB ~ 22dB | 250mW | 70 @ 1mA, 6V | 20mA | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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CEL |
TRANS NPN 2GHZ SOT-323
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 12GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
- Gain: 7dB
- Power - Max: 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock6,192 |
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6V | 12GHz | 1.5dB ~ 2.5dB @ 2GHz | 7dB | 150mW | 75 @ 10mA, 3V | 30mA | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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NXP |
TRANS NPN 15V 5.5GHZ SOT89
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5.5GHz
- Noise Figure (dB Typ @ f): 3.3dB @ 500MHz
- Gain: -
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 70mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock3,344 |
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15V | 5.5GHz | 3.3dB @ 500MHz | - | 1W | 25 @ 70mA, 10V | 100mA | 175°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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M/A-Com Technology Solutions |
TRANSISTOR 130WPK 2.7-2.9GHZ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 63V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 9.73dB ~ 8.85dB
- Power - Max: 130W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 12.5A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock2,144 |
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63V | - | - | 9.73dB ~ 8.85dB | 130W | - | 12.5A | 200°C (TJ) | Chassis Mount | - | - |
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Microsemi Corporation |
TRANS RF BIPO 1450W 40A 55KT1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 55V
- Frequency - Transition: 1.03GHz ~ 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6.5dB
- Power - Max: 1450W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
- Current - Collector (Ic) (Max): 40A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55KT
- Supplier Device Package: 55KT
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Package: 55KT |
Stock6,224 |
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55V | 1.03GHz ~ 1.09GHz | - | 6.5dB | 1450W | 10 @ 1A, 5V | 40A | 200°C (TJ) | Chassis Mount | 55KT | 55KT |
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Microsemi Corporation |
TRANS BIPO 55AW-1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 50V
- Frequency - Transition: 1.2GHz ~ 1.4GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 175W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Current - Collector (Ic) (Max): 8A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55AW
- Supplier Device Package: 55AW
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Package: 55AW |
Stock3,136 |
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50V | 1.2GHz ~ 1.4GHz | - | 7dB | 175W | 20 @ 1A, 5V | 8A | 200°C (TJ) | Chassis Mount | 55AW | 55AW |
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Microsemi Corporation |
TRANS RF BIPO 88W 4A 55AW1
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 50V
- Frequency - Transition: 1.2GHz ~ 1.4GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 88W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Current - Collector (Ic) (Max): 4A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55AW
- Supplier Device Package: 55AW
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Package: 55AW |
Stock4,832 |
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50V | 1.2GHz ~ 1.4GHz | - | 7dB | 88W | 20 @ 500mA, 5V | 4A | 200°C (TJ) | Chassis Mount | 55AW | 55AW |
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Microsemi Corporation |
TRANS RF BIPO 1458W 22A M112
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 65V
- Frequency - Transition: 1.025GHz ~ 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 6.5dB
- Power - Max: 1458W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 250mA, 5V
- Current - Collector (Ic) (Max): 22A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: M112
- Supplier Device Package: M112
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Package: M112 |
Stock4,896 |
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65V | 1.025GHz ~ 1.15GHz | - | 6.5dB | 1458W | 5 @ 250mA, 5V | 22A | 200°C (TJ) | Chassis Mount | M112 | M112 |
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Microsemi Corporation |
TRANS RF BIPO 5.3W 300MA 55EU2
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 21V
- Frequency - Transition: 2GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB ~ 9dB
- Power - Max: 5.3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55EU
- Supplier Device Package: 55EU
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Package: 55EU |
Stock2,560 |
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21V | 2GHz | - | 7dB ~ 9dB | 5.3W | 20 @ 100mA, 5V | 300mA | 150°C (TJ) | Chassis Mount | 55EU | 55EU |
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Maxim Integrated |
TRANS RF NPN 900MHZ 15V 8SOIC
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1GHz
- Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
- Gain: 11.6dB
- Power - Max: 6.4W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
- Current - Collector (Ic) (Max): 1.2A
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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Package: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Stock38,880 |
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15V | 1GHz | 3.3dB @ 836MHz | 11.6dB | 6.4W | 100 @ 250mA, 3V | 1.2A | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Infineon Technologies |
RF BIP TRANSISTORS
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6.1V
- Frequency - Transition: 1.85GHz
- Noise Figure (dB Typ @ f): 2.6dB @ 1.8GHz
- Gain: 17dB
- Power - Max: 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 5V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: TO-243AA |
Stock2,112 |
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6.1V | 1.85GHz | 2.6dB @ 1.8GHz | 17dB | 1.5W | 60 @ 250mA, 5V | 300mA | - | Surface Mount | TO-243AA | SOT-89 |
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NXP |
TRANS RF NPN 12V 50MA SOT-143B
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
- Gain: 15dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143B
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Package: TO-253-4, TO-253AA |
Stock7,984 |
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12V | 11GHz | 1.3dB @ 1.8GHz | 15dB | 450mW | 60 @ 15mA, 8V | 50mA | -40°C ~ 150°C (TJ) | Surface Mount | TO-253-4, TO-253AA | SOT-143B |
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M/A-Com Technology Solutions |
TRANSISTOR 75W 1030-1090MHZ
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 70V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 10.70dB ~ 10.81dB
- Power - Max: 75W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 6A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock6,688 |
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70V | - | - | 10.70dB ~ 10.81dB | 75W | - | 6A | 200°C (TJ) | Chassis Mount | - | - |
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Infineon Technologies |
TRANS RF NPN 9V 20MA 3TSFP
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9V
- Frequency - Transition: 14GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
- Gain: 13dB ~ 28dB
- Power - Max: 75mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
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Package: SOT-723 |
Stock3,360 |
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9V | 14GHz | 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz | 13dB ~ 28dB | 75mW | 90 @ 5mA, 3V | 20mA | 150°C (TJ) | Surface Mount | SOT-723 | PG-TSFP-3 |
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NXP |
TRANS RF NPN 12V 40MA SOT-143R
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 11GHz
- Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
- Gain: 21dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
- Current - Collector (Ic) (Max): 40mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-143R
- Supplier Device Package: SOT-143R
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Package: SOT-143R |
Stock2,752 |
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12V | 11GHz | 0.65dB @ 900MHz | 21dB | 450mW | 60 @ 10mA, 8V | 40mA | -40°C ~ 150°C (TJ) | Surface Mount | SOT-143R | SOT-143R |
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CEL |
TRANSISTOR BIPOLAR .9GHZ 3-SMINI
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 5GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: 3-SuperMiniMold (19)
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Package: - |
Request a Quote |
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12V | 5GHz | - | - | 100mW | 60 @ 5mA, 5V | 60mA | - | Surface Mount | SC-75, SOT-416 | 3-SuperMiniMold (19) |
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MACOM Technology Solutions |
TRANSISTOR,850W,1025-1150MHZ,50V
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 80V
- Frequency - Transition: 1.15GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7.8dB
- Power - Max: 11600W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 250A
- Operating Temperature: 200°C
- Mounting Type: Chassis Mount
- Package / Case: 2L-FLG
- Supplier Device Package: 2L-FLG
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Package: - |
Request a Quote |
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80V | 1.15GHz | - | 7.8dB | 11600W | - | 250A | 200°C | Chassis Mount | 2L-FLG | 2L-FLG |
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Microsemi Corporation |
RF POWER TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Renesas Electronics Corporation |
UHF/VHF MIXER NPN TRANSISTOR
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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NTE Electronics, Inc |
RF TRANS NPN 15V 600MHZ TO92
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 600MHz
- Noise Figure (dB Typ @ f): 6dB @ 60MHz
- Gain: 15dB
- Power - Max: 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
15V | 600MHz | 6dB @ 60MHz | 15dB | 625mW | 20 @ 8mA, 10V | 50mA | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Renesas Electronics Corporation |
SMALL SIGNAL BIPOLAR TRANSTR NPN
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- Frequency - Transition: 24GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1.8GHz
- Gain: 18dB
- Power - Max: 100mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 2V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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Package: - |
Request a Quote |
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4.5V | 24GHz | 1.2dB @ 1.8GHz | 18dB | 100mW | 60 @ 20mA, 2V | 35mA | 150°C (TJ) | Surface Mount | SC-82A, SOT-343 | CMPAK-4 |