|
|
Infineon Technologies |
MOSFET 2N-CH 20V 8.9A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.9A
- Rds On (Max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock35,316 |
|
Logic Level Gate | 20V | 8.9A | 18.3 mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | 540pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Infineon Technologies |
MOSFET 2P-CH 20V 2.2A 6-TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.2A
- Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
- Power - Max: 960mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock6,592 |
|
Logic Level Gate | 20V | 2.2A | 135 mOhm @ 2.2A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 320pF @ 15V | 960mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
|
|
Microsemi Corporation |
MOSFET 2N-CH 600V 39A SP1
- FET Type: 2 N-Channel (Dual)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 39A
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
- Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 250W
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
|
Package: SP1 |
Stock3,568 |
|
Super Junction | 600V | 39A | 70 mOhm @ 39A, 10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | 250W | - | Chassis Mount | SP1 | SP1 |
|
|
ON Semiconductor |
MOSFET 2N-CH 35V 8A 8SOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 35V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 20V
- Power - Max: 2.2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.173", 4.40mm Width) |
Stock2,912 |
|
Logic Level Gate | 35V | 8A | 24 mOhm @ 8A, 10V | 2.6V @ 1mA | 13nC @ 10V | 660pF @ 20V | 2.2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP |
|
|
Microsemi Corporation |
MOSFET 2N-CH 200V 89A SP4
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 89A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 44.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V
- Power - Max: 357W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
|
Package: SP4 |
Stock2,976 |
|
Standard | 200V | 89A | 24 mOhm @ 44.5A, 10V | 5V @ 2.5mA | 112nC @ 10V | 6850pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
|
|
Vishay Siliconix |
MOSFET 2N-CH 20V 7.3A 14SO
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.3A, 9.9A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.14W, 1.43W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
|
Package: 14-SOIC (0.154", 3.90mm Width) |
Stock660,000 |
|
Logic Level Gate | 20V | 7.3A, 9.9A | 12 mOhm @ 9.6A, 10V | 2V @ 250µA | 15nC @ 4.5V | - | 1.14W, 1.43W | -55°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
|
|
ON Semiconductor |
MOSFET 2N-CH 60V 4.5A DFN8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Power - Max: 3W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
|
Package: 8-PowerTDFN |
Stock2,688 |
|
Logic Level Gate | 60V | 4.5A | 65 mOhm @ 15A, 10V | 2.5V @ 250µA | 12.4nC @ 10V | 330pF @ 25V | 3W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
|
|
Vishay Siliconix |
MOSFET 2N-CH 20V 6A PPAK 1212-8
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? 1212-8 Dual
- Supplier Device Package: PowerPAK? 1212-8 Dual
|
Package: PowerPAK? 1212-8 Dual |
Stock359,544 |
|
Logic Level Gate | 20V | 6A | 26 mOhm @ 8.5A, 4.5V | 900mV @ 250µA | 16nC @ 4.5V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 60V TO252-4L
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-4L
|
Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock18,852 |
|
Logic Level Gate | 60V | 3.5A, 3A | 60 mOhm @ 12A, 10V | 3V @ 250µA | 10nC @ 10V | 540pF @ 30V | 2W | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
|
|
Vishay Siliconix |
MOSFET 2N-CH 30V 16A POWERPAIR
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 16A
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
- Power - Max: 27W, 30W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerPair?
- Supplier Device Package: 6-PowerPair?
|
Package: 6-PowerPair? |
Stock15,564 |
|
Logic Level Gate | 30V | 16A | 12 mOhm @ 13.8A, 10V | 2.5V @ 250µA | 21nC @ 10V | 790pF @ 15V | 27W, 30W | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerPair? | 6-PowerPair? |
|
|
Rohm Semiconductor |
MOSFET N/P-CH 30V 3.5A SOP8
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock29,976 |
|
Standard | 30V | 3.5A | 83 mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | 140pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Diodes Incorporated |
MOSFET 2N-CH 30V 0.65A SOT363
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 650mA
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
- Power - Max: 290mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock2,384 |
|
Standard | 30V | 650mA | 400 mOhm @ 250mA, 10V | 1.6V @ 250µA | 1.3nC @ 10V | 50pF @ 15V | 290mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
|
Fairchild/ON Semiconductor |
MOSFET 2P-CH 30V 2.9A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.9A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock48,300 |
|
Logic Level Gate | 30V | 2.9A | 130 mOhm @ 1A, 10V | 3V @ 250µA | 3.5nC @ 10V | 185pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Central Semiconductor Corp |
MOSFET 2N-CH 60V 0.28A SOT563
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 280mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock7,136 |
|
Standard | 60V | 280mA | 2 Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.59nC @ 4.5V | 50pF @ 25V | 350mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Fairchild/ON Semiconductor |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.9A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock476,688 |
|
Logic Level Gate | 30V | 3.7A, 2.9A | 80 mOhm @ 1A, 10V | 2.8V @ 250µA | 25nC @ 10V | 320pF @ 10V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Diodes Incorporated |
MOSFET 2P-CH 60V 3.3A 8SO
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3.3A
- Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 969pF @ 30V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock39,342 |
|
Standard | 60V | 3.3A | 105 mOhm @ 4.5A, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | 1.2W | -55°C ~ 150°C (TJ) | - | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 40V 12A TO252-4
- FET Type: N and P-Channel, Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 12A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: TO-252-4L
|
Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Stock81,456 |
|
Logic Level Gate | 40V | 12A | 30 mOhm @ 12A, 10V | 3V @ 250µA | 10.8nC @ 10V | 650pF @ 20V | 2W | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
|
|
Microchip Technology |
SIC 2N-CH 1200V 79A
- FET Type: Silicon Carbide (SiC)
- FET Feature: -
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | 1200V (1.2kV) | 79A | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 310W | -55°C ~ 175°C (TJ) | Chassis Mount | Module | - |
|
|
Diodes Incorporated |
MOSFET N/P-CH 60V 0.571A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V, 50V
- Current - Continuous Drain (Id) @ 25°C: 571mA (Ta), 304mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 26pF @ 25V
- Power - Max: 510mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Request a Quote |
|
- | 60V, 50V | 571mA (Ta), 304mA (Ta) | 1.7Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.4nC @ 4.5V, 0.3nC @ 4.5V | 30pF @ 25V, 26pF @ 25V | 510mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Diodes Incorporated |
MOSFET 2N-CH 50V 0.48A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
- Power - Max: 480mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Stock9,000 |
|
- | 50V | 480mA (Ta) | 2Ohm @ 50mA, 5V | 1V @ 250µA | 1.5nC @ 10V | 39pF @ 25V | 480mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Renesas Electronics Corporation |
MOSFET
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
STMicroelectronics |
MOSFET 2N-CH 60V 10A POWERFLAT
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Power - Max: 57.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerFlat™ (5x6)
|
Package: - |
Request a Quote |
|
- | 60V | 10A (Tc) | 27mOhm @ 5A, 10V | 4V @ 250µA | 7.9nC @ 10V | 380pF @ 25V | 57.7W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) |
|
|
onsemi |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Panjit International Inc. |
MOSFET 2N-CH 20V 0.8A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Stock27,435 |
|
- | 20V | 800mA (Ta) | 400mOhm @ 500mA, 4.5V | 1V @ 250µA | 0.92nC @ 4.5V | 50pF @ 10V | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Renesas Electronics Corporation |
MOSFET 2P-CH 12V 2.5A SC95
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Rds On (Max) @ Id, Vgs: 130mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 10V
- Power - Max: 1.15W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-95
- Supplier Device Package: SC-95
|
Package: - |
Request a Quote |
|
Logic Level Gate, 1.8V Drive | 12V | 2.5A (Ta) | 130mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 1.9nC @ 4V | 220pF @ 10V | 1.15W (Ta) | 150°C | Surface Mount | SC-95 | SC-95 |
|
|
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 6.9A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A
- Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
Package: - |
Request a Quote |
|
- | 30V | 6.9A | 27mOhm @ 6.9A, 10V | 1.5V @ 250µA | 7nC @ 4.5V | 630pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Sanyo |
PNP/NPN EPITAXIAL PLANAR SILICON
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Siliconix |
MOSFET 2N-CH 80V 10A PWRPAIR
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
- Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
- Power - Max: 4.5W (Ta), 56.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-PowerPair™
- Supplier Device Package: PowerPAIR® 3x3FS
|
Package: - |
Stock17,940 |
|
- | 80V | 10A (Ta), 36A (Tc) | 19mOhm @ 10A, 10V | 2V @ 250µA | 23nC @ 10V | 950pF @ 40V | 4.5W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 12-PowerPair™ | PowerPAIR® 3x3FS |