Page 108 - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products

JAN2N7334
Microsemi Corporation

MOSFET 4N-CH 100V 1A MO-036AB

Package: 14-DIP (0.300", 7.62mm)

Stock3,328
MMDF3N04HDR2G
ON Semiconductor

MOSFET 2N-CH 40V 3.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,169,340
NTJD4152PT1
ON Semiconductor

MOSFET 2P-CH 20V 0.88A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock55,020
STS4DNF60
STMicroelectronics

MOSFET 2N-CH 60V 4A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,272
APTC60DDAM45T1G
Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

Package: SP1

Stock7,760
SMA5127
Sanken

MOSFET 3N/3P-CH 60V 4A 12-SIP

Package: 12-SIP, Exposed Tab

Stock75,840
SI4914BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 8.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,539,588
AON6996
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 50A/60A DFN

Package: 8-PowerSMD, Flat Leads

Stock2,112
QS8J2TR
Rohm Semiconductor

MOSFET 2P-CH 12V 4A TSMT8

Package: 8-SMD, Flat Lead

Stock5,552
FDS4897AC
Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 6.1A/5.2A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock12,828
ZXMP6A16DN8QTA
Diodes Incorporated

MOSFET 2P-CH 60V 2.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock11,412
IRF7304
Infineon Technologies

MOSFET 2P-CH 20V 4.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock15,444
PMCXB1000UEZ
Nexperia USA Inc.

MOSFET ARRAY N/PCH 30V DFN1010B6

Package: 6-XFDFN Exposed Pad

Stock6,240
NTMFD4C85NT1G
ON Semiconductor

MOSFET 2N-CH 30V 8DFN

Package: 8-PowerTDFN

Stock7,904
FDPC8014S
Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 8PWRCLIP

Package: 8-PowerWDFN

Stock3,456
NTMD4820NR2G
ON Semiconductor

MOSFET 2N-CH 30V 4.9A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,300,728
CMLDM7003G TR
Central Semiconductor Corp

MOSFET 2N-CH 50V 0.28A SOT563

Package: SOT-563, SOT-666

Stock4,992
DMN2050LFDB-7
Diodes Incorporated

MOSFET 2N-CH 20V 3.3A 6UDFN

Package: 6-UDFN Exposed Pad

Stock3,776
EM5K5T2R
Rohm Semiconductor

MOSFET 2N-CH 30V 0.3A EMT5

Package: 6-SMD (5 Leads), Flat Lead

Stock94,290
DMHC4035LSD-13
Diodes Incorporated

MOSFET 2N/2P-CH 40V 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock20,304

Part Number	Manufacturer	Description	Package	Stock	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
JAN2N7334	Microsemi Corporation	MOSFET 4N-CH 100V 1A MO-036AB FET Type: 4 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: MO-036AB	Package: 14-DIP (0.300", 7.62mm)	Stock3,328	Standard	100V	1A	700 mOhm @ 600mA, 10V	4V @ 250µA	60nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	MO-036AB
MMDF3N04HDR2G	ON Semiconductor	MOSFET 2N-CH 40V 3.4A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Power - Max: 1.39W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,169,340	Logic Level Gate	40V	3.4A	80 mOhm @ 3.4A, 10V	3V @ 250µA	28nC @ 10V	900pF @ 32V	1.39W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTJD4152PT1	ON Semiconductor	MOSFET 2P-CH 20V 0.88A SOT-363 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 880mA Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V Power - Max: 272mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock55,020	Logic Level Gate	20V	880mA	260 mOhm @ 880mA, 4.5V	1.2V @ 250µA	2.2nC @ 4.5V	155pF @ 20V	272mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
STS4DNF60	STMicroelectronics	MOSFET 2N-CH 60V 4A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,272	Logic Level Gate	60V	4A	90 mOhm @ 2A, 10V	4V @ 250µA	10nC @ 10V	315pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
APTC60DDAM45T1G	Microsemi Corporation	MOSFET 2N-CH 600V 49A SP1 FET Type: 2 N Channel (Dual Buck Chopper) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	Package: SP1	Stock7,760	Super Junction	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SMA5127	Sanken	MOSFET 3N/3P-CH 60V 4A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 550 Ohm @ 2A, 4V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Power - Max: 4W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	Package: 12-SIP, Exposed Tab	Stock75,840	Standard	60V	4A	550 Ohm @ 2A, 4V	2V @ 250µA	-	150pF @ 10V	4W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
SI4914BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8.4A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A, 8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2.7W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,539,588	Standard	30V	8.4A, 8A	21 mOhm @ 8A, 10V	2.7V @ 250µA	10.5nC @ 4.5V	-	2.7W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AON6996	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 50A/60A DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A, 60A Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (5x6)	Package: 8-PowerSMD, Flat Leads	Stock2,112	Standard	30V	50A, 60A	5.2 mOhm @ 20A, 10V	2.2V @ 250µA	13nC @ 10V	820pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (5x6)
QS8J2TR	Rohm Semiconductor	MOSFET 2P-CH 12V 4A TSMT8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 36 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 6V Power - Max: 550mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	Package: 8-SMD, Flat Lead	Stock5,552	Logic Level Gate, 1.5V Drive	12V	4A	36 mOhm @ 4A, 4.5V	1V @ 1mA	20nC @ 4.5V	1940pF @ 6V	550mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
FDS4897AC	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 6.1A/5.2A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock12,828	Logic Level Gate	40V	6.1A, 5.2A	26 mOhm @ 6.1A, 10V	3V @ 250µA	21nC @ 10V	1055pF @ 20V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMP6A16DN8QTA	Diodes Incorporated	MOSFET 2P-CH 60V 2.9A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V Power - Max: 1.81W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock11,412	Logic Level Gate	60V	2.9A	85 mOhm @ 2.9A, 10V	1V @ 250µA (Min)	24.2nC @ 10V	1021pF @ 30V	1.81W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7304	Infineon Technologies	MOSFET 2P-CH 20V 4.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock15,444	Logic Level Gate	20V	4.3A	90 mOhm @ 2.2A, 4.5V	700mV @ 250µA	22nC @ 4.5V	610pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMCXB1000UEZ	Nexperia USA Inc.	MOSFET ARRAY N/PCH 30V DFN1010B6 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Power - Max: 285mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	Package: 6-XFDFN Exposed Pad	Stock6,240	Standard	30V	590mA (Ta), 410mA (Ta)	670 mOhm @ 590mA, 4.5V, 1.4 Ohm @ 410mA, 4.5V	950mV @ 250µA	1.05nC @ 4.5V, 1.2nC @ 4.5V	30.3pF @ 15V, 43.2pF @ 15V	285mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
NTMFD4C85NT1G	ON Semiconductor	MOSFET 2N-CH 30V 8DFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V Power - Max: 1.13W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6)	Package: 8-PowerTDFN	Stock7,904	Standard	30V	15.4A, 29.7A	3 mOhm @ 20A, 10V	2.1V @ 250µA	32nC @ 10V	1960pF @ 15V	1.13W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6)
FDPC8014S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 8PWRCLIP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 20A, 41A Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2375pF @ 13V Power - Max: 2.1W, 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	Package: 8-PowerWDFN	Stock3,456	Logic Level Gate	25V	20A, 41A	3.8 mOhm @ 20A, 10V	2.5V @ 250µA	35nC @ 10V	2375pF @ 13V	2.1W, 2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
NTMD4820NR2G	ON Semiconductor	MOSFET 2N-CH 30V 4.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V Power - Max: 750mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,300,728	Logic Level Gate	30V	4.9A	20 mOhm @ 7.5A, 10V	3V @ 250µA	7.7nC @ 4.5V	940pF @ 15V	750mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CMLDM7003G TR	Central Semiconductor Corp	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock4,992	Standard	50V	280mA	2 Ohm @ 50mA, 5V	1V @ 250µA	0.76nC @ 4.5V	50pF @ 25V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN2050LFDB-7	Diodes Incorporated	MOSFET 2N-CH 20V 3.3A 6UDFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V Power - Max: 730mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	Package: 6-UDFN Exposed Pad	Stock3,776	Logic Level Gate	20V	3.3A	45 mOhm @ 5A, 4.5V	1V @ 250µA	12nC @ 10V	389pF @ 10V	730mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
EM5K5T2R	Rohm Semiconductor	MOSFET 2N-CH 30V 0.3A EMT5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 600 mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 150mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	Package: 6-SMD (5 Leads), Flat Lead	Stock94,290	Standard	30V	300mA	600 mOhm @ 300mA, 4.5V	-	-	-	150mW	-	Surface Mount	6-SMD (5 Leads), Flat Lead	EMT5
DMHC4035LSD-13	Diodes Incorporated	MOSFET 2N/2P-CH 40V 8-SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.7A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,304	Logic Level Gate	40V	4.5A, 3.7A	45 mOhm @ 3.9A, 10V	3V @ 250µA	12.5nC @ 10V	574pF @ 20V	1.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIZ348DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 18A/30A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 3.7W (Ta), 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	Package: -	Stock17,520	-	30V	18A (Ta), 30A (Tc)	7.12mOhm @ 15A, 10V	2.4V @ 250µA	18.2nC @ 10V	820pF @ 15V	3.7W (Ta), 16.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
BSM400D12P2G003	Rohm Semiconductor	SIC 2N-CH 1200V 400A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 85mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 10V Power - Max: 2450W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	Package: -	Stock12	-	1200V (1.2kV)	400A (Tc)	-	4V @ 85mA	-	38000pF @ 10V	2450W (Tc)	-40°C ~ 150°C (TJ)	-	Module	Module
NXV08H350XT1	onsemi	MOSFET 80V APM17-MDC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 0.762mOhm @ 160A, 12V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Supplier Device Package: APM17-MDC	Package: -	Request a Quote	-	80V	-	0.762mOhm @ 160A, 12V	4.6V @ 1mA	320nC @ 10V	24350pF @ 40V	-	-40°C ~ 125°C (TA)	Through Hole	17-PowerDIP Module (1.390", 35.30mm)	APM17-MDC
HUFA76409T3ST	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
ECH8674-TL-H	Sanyo	MOSFET 2P-CH 12V 5A SOT28 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 41mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 6V Power - Max: 1.3W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/ECH8	Package: -	Request a Quote	-	12V	5A (Ta)	41mOhm @ 3A, 4.5V	1.3V @ 1mA	6.9nC @ 4.5V	660pF @ 6V	1.3W (Ta)	150°C	Surface Mount	8-SMD, Flat Lead	SOT-28FL/ECH8
IRF7379QTRPBF	Infineon Technologies	MOSFET N/P-CH 30V 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Power - Max: 2.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	Package: -	Request a Quote	Logic Level Gate	30V	5.8A, 4.3A	45mOhm @ 5.8A, 10V	1V @ 250µA	25nC @ 10V	520pF @ 25V	2.5W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN3006SCA6-7	Diodes Incorporated	MOSFET 2N-CH 30V 13A X4-DSN3519 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2235pF @ 15V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X4-DSN3519-6	Package: -	Request a Quote	-	30V	13A (Ta)	5.5mOhm @ 5A, 10V	2.2V @ 1mA	17.7nC @ 4.5V	2235pF @ 15V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X4-DSN3519-6
MSCSM120XM50CTYZBNMG	Microchip Technology	PM-MOSFET-SIC-SBD-6HPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V Power - Max: 196W (Tc), 315W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	Package: -	Request a Quote	-	1200V (1.2kV)	49A (Tc), 80A (Tc)	50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V	2.7V @ 2mA, 2.8V @ 3mA	137nC @ 20V, 232nC @ 20V	1990pF @ 1000V, 3020pF @ 1000V	196W (Tc), 315W (Tc)	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-