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Infineon Technologies |
MOSFET 2N-CH 20V 10A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A, 12A
- Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock28,860 |
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Logic Level Gate | 20V | 10A, 12A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 6A
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock7,648 |
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Standard | 30V | 6A | 30 mOhm @ 6A, 10V | 2.4V @ 250µA | 6.3nC @ 10V | 310pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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IXYS |
MOSFET 6N-CH 75V 110A ISOPLUS
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 110A
- Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-SMD, Flat Leads
- Supplier Device Package: ISOPLUS-DIL?
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Package: 17-SMD, Flat Leads |
Stock5,392 |
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Standard | 75V | 110A | 4.9 mOhm @ 60A, 10V | 4V @ 1mA | 115nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 17-SMD, Flat Leads | ISOPLUS-DIL? |
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Fairchild/ON Semiconductor |
MOSFET N/P-CH 25V SSOT-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 220mA, 460mA
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT?-6
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock5,831,784 |
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Logic Level Gate | 25V | 220mA, 460mA | 4 Ohm @ 400mA, 4.5V | 1.5V @ 250µA | 0.7nC @ 4.5V | 9.5pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |
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Diodes Incorporated |
MOSFET N/P-CH 60V/50V SC70-6
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V, 50V
- Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 200mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock108,000 |
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Logic Level Gate | 60V, 50V | 115mA, 130mA | 7.5 Ohm @ 50mA, 5V | 2.5V @ 250µA | - | 50pF @ 25V | 200mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Microsemi Corporation |
MOSFET 2N-CH 1000V 43A SP4
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 43A
- Rds On (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
- Power - Max: 780W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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Package: SP4 |
Stock4,128 |
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Standard | 1000V (1kV) | 43A | 210 mOhm @ 21.5A, 10V | 5V @ 5mA | 372nC @ 10V | 10400pF @ 25V | 780W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
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ON Semiconductor |
MOSFET 2N-CH EFCP
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFBGA
- Supplier Device Package: 6-EFCP (2.7x1.81)
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Package: 6-XFBGA |
Stock2,032 |
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Logic Level Gate, 2.5V Drive | - | - | - | - | 48nC @ 4.5V | - | 2W | 150°C (TJ) | Surface Mount | 6-XFBGA | 6-EFCP (2.7x1.81) |
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Nexperia USA Inc. |
MOSFET N/P-CH 20V 0.6A/0.5A 6DFN
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
- Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
- Power - Max: 265mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: 6-DFN (1.1x1)
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Package: 6-XFDFN Exposed Pad |
Stock4,368 |
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Logic Level Gate | 20V | 600mA, 500mA | 620 mOhm @ 600mA, 4.5V | 950mV @ 250µA | 0.7nC @ 4.5V | 21.3pF @ 10V | 265mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) |
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Diodes Incorporated |
MOSFET 2N-CH 30V 6.2A UDFN2020-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.2A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock5,584 |
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Standard | 30V | 6.2A | 30 mOhm @ 5.8A, 10V | 2V @ 250µA | 10.6nC @ 10V | 500pF @ 15V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Vishay Siliconix |
MOSFET ARRAY 2N-CH 30V SC70-6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SC-70-6 Dual
- Supplier Device Package: PowerPAK? SC-70-6 Dual
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Package: PowerPAK? SC-70-6 Dual |
Stock6,816 |
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Standard | 30V | 4.5A (Tc) | 58 mOhm @ 3A, 4.5V | 900mV @ 250µA | 5.5nC @ 4.5V | - | 7.8W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual |
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Diodes Incorporated |
MOSFET N/P-CH 30V 26TSOT
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V
- Power - Max: 850mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock3,280 |
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Logic Level Gate | 30V | 3.8A, 2.5A | 55 mOhm @ 3.4A, 10V | 1.5V @ 250µA | 12.3nC @ 10V | 422pF @ 15V | 850mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Vishay Siliconix |
MOSFET 2N-CH 40V 60A PPAK SO-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 60A
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 20V
- Power - Max: 46W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock36,912 |
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Standard | 40V | 60A | 5.8 mOhm @ 18.5A, 10V | 2.5V @ 250µA | 65nC @ 10V | 2300pF @ 20V | 46W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Nexperia USA Inc. |
MOSFET 2N-CH 60V 40A LFPAK56
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A
- Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
- Power - Max: 64W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1205, 8-LFPAK56
- Supplier Device Package: LFPAK56D
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Package: SOT-1205, 8-LFPAK56 |
Stock4,464 |
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Logic Level Gate | 60V | 40A | 12.5 mOhm @ 10A, 5V | 2.1V @ 1mA | 22.4nC @ 5V | 2953pF @ 25V | 64W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | LFPAK56D |
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Vishay Siliconix |
MOSFET ARRAY 2P-CH 30V 6TSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 400mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.67W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 Thin, TSOT-23-6 |
Stock6,048 |
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Standard | 30V | 2.5A (Tc) | 155 mOhm @ 400mA, 10V | 1.5V @ 250µA | 11.1nC @ 10V | - | 1.67W | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-TSOP |
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Infineon Technologies |
MOSFET 2P-CH 20V 0.39A SOT363
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 390mA
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
- Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock206,274 |
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Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | 56pF @ 15V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Vishay Siliconix |
MOSFET N/P-CH 60V 5.3A 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
- Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
- Power - Max: 3.1W, 3.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock605,124 |
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Logic Level Gate | 60V | 5.3A, 3.9A | 58 mOhm @ 4.3A, 10V | 3V @ 250µA | 20nC @ 10V | 665pF @ 15V | 3.1W, 3.4W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2P-CH 20V 1.3A SC70-6
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Rds On (Max) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6 (SOT-363)
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock144,012 |
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Logic Level Gate | 20V | 1.3A | 490 mOhm @ 910mA, 4.5V | 1V @ 250µA | 4nC @ 8V | 110pF @ 10V | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 (SOT-363) |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 30V 6A 8SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock197,244 |
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Logic Level Gate | 30V | 6A | 32 mOhm @ 6A, 10V | 3V @ 250µA | 20nC @ 5V | 1540pF @ 15V | 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Central Semiconductor Corp |
MOSFET N/P-CH 20V 0.16A SOT963
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA
- Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.46nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
- Power - Max: 125mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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Package: - |
Stock23,670 |
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Logic Level Gate | 20V | 160mA, 140mA | 3Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.46nC @ 4.5V | 9pF @ 15V | 125mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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Taiwan Semiconductor Corporation |
MOSFET 2N-CH 30V 107A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
- Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V
- Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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Package: - |
Stock15,000 |
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- | 30V | 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc) | 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V | 2.5V @ 250µA | 9.3nC @ 10V, 49nC @ 10V | 555pF @ 15V, 2550pF @ 15V | 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PDFN (5x6) |
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Diodes Incorporated |
MOSFET 2N-CH 60V 0.49A SOT563
- FET Type: MOSFET (Metal Oxide)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
- Power - Max: 470mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Request a Quote |
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Logic Level Gate | 60V | 490mA (Ta) | 2Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.5nC @ 4.5V | 32pF @ 30V | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 52A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 34A (Tc), 13.8A (Ta), 52A (Tc)
- Rds On (Max) @ Id, Vgs: 13.7mOhm @ 10A, 10V, 7.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V, 1300pF @ 15V
- Power - Max: 1.9W (Ta), 22W (Tc), 2.1W (Ta), 30W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: - |
Request a Quote |
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- | 30V | 10A (Ta), 34A (Tc), 13.8A (Ta), 52A (Tc) | 13.7mOhm @ 10A, 10V, 7.3mOhm @ 20A, 10V | 2.5V @ 250µA | 17nC @ 10V, 20nC @ 10V | 910pF @ 15V, 1300pF @ 15V | 1.9W (Ta), 22W (Tc), 2.1W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-DFN (5x6) |
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Rohm Semiconductor |
MOSFET N/P-CH 60V 6.5A/7A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 7A (Ta)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V, 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V, 2630pF @ 30V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: - |
Stock6,063 |
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- | 60V | 6.5A (Ta), 7A (Ta) | 32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V | 2.5V @ 1mA | 7.6nC @ 10V, 50nC @ 10V | 460pF @ 30V, 2630pF @ 30V | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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onsemi |
MOSFET 2N-CH 40V 14A/49A 8DFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
- Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Power - Max: 3W (Ta), 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Package: - |
Stock4,626 |
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- | 40V | 14A (Ta), 49A (Tc) | 8.1mOhm @ 15A, 10V | 3.5V @ 250µA | 11nC @ 10V | 650pF @ 25V | 3W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Renesas Electronics Corporation |
MOSFET N-CH 20WLCSP
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor Inc. |
MOSFET N/P-CH 30V 8.1A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 7.1A (Ta)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 8.1A, 10V, 25mOhm @ 7.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA, 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V, 30.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1573pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
Request a Quote |
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- | 30V | 8.1A (Ta), 7.1A (Ta) | 20mOhm @ 8.1A, 10V, 25mOhm @ 7.1A, 10V | 3V @ 250µA, 2.7V @ 250µA | 19.2nC @ 10V, 30.9nC @ 10V | 1250pF @ 15V, 1573pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Harris Corporation |
MOSFET N-CH
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET 2N-CH 30V 32A POWERDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 393pF @ 15V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
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Package: - |
Stock2,298 |
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- | 30V | 32A (Tc) | 20mOhm @ 9A, 10V | 2.5V @ 250µA | 7nC @ 10V | 393pF @ 15V | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXC) |