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Vishay Siliconix |
MOSFET 2N-CH 25V 8A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
- Power - Max: 2.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock183,744 |
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Logic Level Gate | 25V | 8A | 23 mOhm @ 7A, 10V | 2.2V @ 250µA | 18nC @ 10V | 680pF @ 13V | 2.8W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Vishay Siliconix |
MOSFET 2N-CH 40V 7.2A PPAK SO-8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.2A
- Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 11.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock15,876 |
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Logic Level Gate | 40V | 7.2A | 16.5 mOhm @ 11.3A, 10V | 3V @ 250µA | 75nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Microsemi Corporation |
MOSFET 6N-CH 500V 51A SP6-P
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 51A
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
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Package: SP6 |
Stock5,952 |
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Standard | 500V | 51A | 78 mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6-P |
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IXYS |
MOSFET 6N-CH 75V 340A V2
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 340A
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 250A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: V2-PAK
- Supplier Device Package: V2-PAK
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Package: V2-PAK |
Stock6,672 |
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Standard | 75V | 340A | 3.3 mOhm @ 250A, 10V | 4V @ 2mA | 450nC @ 10V | - | - | -40°C ~ 175°C (TJ) | Through Hole | V2-PAK | V2-PAK |
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Fairchild/ON Semiconductor |
MOSFET 2P-CH 20V 6.5A BGA
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.5A
- Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 18-WFBGA
- Supplier Device Package: 18-BGA (2.5x4)
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Package: 18-WFBGA |
Stock68,400 |
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Logic Level Gate | 20V | 6.5A | 28 mOhm @ 6.5A, 4.5V | 1.5V @ 250µA | 20nC @ 4.5V | 1900pF @ 10V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 18-WFBGA | 18-BGA (2.5x4) |
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STMicroelectronics |
MOSFET 2N-CH 60V 3A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 25V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock336,732 |
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Logic Level Gate | 60V | 3A | 80 mOhm @ 1.5A, 10V | 1V @ 250µA | 13.5nC @ 4.5V | 815pF @ 25V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Microsemi Corporation |
MOSFET 2N-CH 200V 104A SP3
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 104A
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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Package: SP3 |
Stock4,480 |
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Standard | 200V | 104A | 19 mOhm @ 52A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7220pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | SP3 |
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Vishay Siliconix |
MOSFET 2N-CH 30V 6.4A PPAK SO-8
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.4A
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock1,201,320 |
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Logic Level Gate | 30V | 6.4A | 22 mOhm @ 7.5A, 10V | 3V @ 250µA | 11nC @ 4.5V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Vishay Siliconix |
MOSFET 2N-CH 30V 10A 8-SOIC
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 3.3W, 3.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock31,080 |
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Logic Level Gate | 30V | 10A, 10.5A | 18 mOhm @ 10A, 10V | 3V @ 250µA | 10nC @ 4.5V | - | 3.3W, 3.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
MOSFET 2N-CH 60V 6A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
- Power - Max: 3.2W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (5x6)
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Package: 8-PowerTDFN |
Stock3,968 |
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Logic Level Gate | 60V | 6A | 39 mOhm @ 7.5A, 10V | 3V @ 250µA | 20nC @ 10V | 540pF @ 25V | 3.2W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-DFN (5x6) |
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Diodes Incorporated |
MOSFET BVDSS: 8V 24V U-DFN2020-6
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta)
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V
- Power - Max: 1.36W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock2,832 |
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Standard | 12V | 5.1A (Ta), 3.9A (Ta) | 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V | 1V @ 250µA | 12.2nC @ 4.5V, 13nC @ 4.5V | 1003pF @ 6V, 1028pF @ 6V | 1.36W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Vishay Siliconix |
MOSFET ARRAY 2N-CH 100V SO8
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 25.5 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
- Power - Max: 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK? SO-8 Dual
- Supplier Device Package: PowerPAK? SO-8 Dual
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Package: PowerPAK? SO-8 Dual |
Stock7,776 |
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Standard | 100V | 30A (Tc) | 25.5 mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V | 1050pF @ 25V | 48W | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
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Rohm Semiconductor |
MOSFET N/P-CH 30V 9A/7A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A, 7A
- Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock27,000 |
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Logic Level Gate | 30V | 9A, 7A | 18 mOhm @ 9A, 10V | 2.5V @ 1mA | 15nC @ 5V | 1190pF @ 10V | 2W | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Central Semiconductor Corp |
MOSFET 2N-CH 50V 0.28A SOT563
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 280mA
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 350mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock28,920 |
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Standard | 50V | 280mA | 2 Ohm @ 50mA, 5V | 1V @ 250µA | 0.76nC @ 4.5V | 50pF @ 25V | 350mW | -65°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Sanken |
MOSFET 6N-CH 60V 5A 15-SIP
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 300 mOhm @ 3A, 4V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
- Power - Max: 5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 15-SIP, Exposed Tab, Formed Leads
- Supplier Device Package: 15-SIP
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Package: 15-SIP, Exposed Tab, Formed Leads |
Stock22,968 |
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Logic Level Gate | 60V | 5A | 300 mOhm @ 3A, 4V | 2V @ 250µA | - | 320pF @ 10V | 5W | 150°C (TJ) | Through Hole | 15-SIP, Exposed Tab, Formed Leads | 15-SIP |
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Infineon Technologies |
MOSFET 2N-CH 55V 4.7A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 4.7A
- Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,397,436 |
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Logic Level Gate | 55V | 4.7A | 50 mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Wise-Integration |
GANFET 2P-CH 750V 9A 14QFN
- FET Type: GaNFET (Gallium Nitride)
- FET Feature: -
- Drain to Source Voltage (Vdss): 750V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tj)
- Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 6V
- Vgs(th) (Max) @ Id: 1.75V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 6V
- Input Capacitance (Ciss) (Max) @ Vds: 53.5pF @ 400V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-PowerLDFN
- Supplier Device Package: 14-PQFN (6x8)
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Package: - |
Stock4,500 |
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- | 750V | 9A (Tj) | 250mOhm @ 2A, 6V | 1.75V @ 10mA | 1.9nC @ 6V | 53.5pF @ 400V | - | -40°C ~ 150°C (TJ) | Surface Mount | 14-PowerLDFN | 14-PQFN (6x8) |
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Diodes Incorporated |
MOSFET BVDSS: 41V~60V TSOT26 T&R
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
- Power - Max: 500µW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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Package: - |
Request a Quote |
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- | 50V | 430mA (Ta) | 2Ohm @ 50mA, 5V | 1V @ 250µA | 1.4nC @ 10V | 41pF @ 25V | 500µW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSOT-26 |
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Diodes Incorporated |
MOSFET 2N-CH 30V 6.5A 6UDFN
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 1.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
- Power - Max: 860mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: - |
Request a Quote |
|
- | 30V | 6.5A (Ta) | 21mOhm @ 6A, 10V | 1.7V @ 250µA | 8.8nC @ 10V | 383pF @ 15V | 860mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Diodes Incorporated |
MOSFET 2N-CH 40V 10.2A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 27.5A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
- Power - Max: 1.16W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXD)
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Package: - |
Request a Quote |
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- | 40V | 10.2A (Ta), 27.5A (Tc) | 15mOhm @ 20A, 10V | 3V @ 250µA | 11.2nC @ 10V | 750pF @ 20V | 1.16W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PowerDI3333-8 (Type UXD) |
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Good-Ark Semiconductor |
MOSFET 2P-CH 20V 7.5A 8PPAK
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
- Power - Max: 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: 8-PPAK (3.15x3.1)
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Package: - |
Stock17,700 |
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- | 20V | 7.5A (Tc) | 33mOhm @ 4A, 4.5V | 1V @ 250µA | 25nC @ 4.5V | 2100pF @ 15V | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-PPAK (3.15x3.1) |
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Diodes Incorporated |
MOSFET 2N-CH 30V 7.6A PWRDI3333
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
- Power - Max: 1.96W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PowerDI3333-8 (Type D)
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Package: - |
Request a Quote |
|
- | 30V | 7.6A (Ta), 15A (Tc) | 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V | 2.1V @ 250µA, 1.2V @ 250µA | 3.7nC @ 4.5V, 8nC @ 4.5V | 481pF @ 15V, 996pF @ 15V | 1.96W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerLDFN | PowerDI3333-8 (Type D) |
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Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT563 T&R
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
- Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
- Power - Max: 490mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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- | 30V | 800mA (Ta) | 400mOhm @ 590mA, 10V | 1.6V @ 100µA | 1.2nC @ 10V | 50pF @ 15V | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Micro Commercial Co |
MOSFET
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 935pF @ 25V
- Power - Max: 60W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PDFN5060-8D
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Package: - |
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- | 40V | 55A (Tc) | 8.5mOhm @ 20A, 10V | 4V @ 250µA | 13nC @ 10V | 935pF @ 25V | 60W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerLDFN | PDFN5060-8D |
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Micro Commercial Co |
MOSFET 2N-CH 60V 5A 8SOP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 979pF @ 30V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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- | 60V | 5A | 35mOhm @ 5A, 10V | 2.5V @ 250µA | 22nC @ 10V | 979pF @ 30V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
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Sanken Electric USA Inc. |
MOSFET 4N-CH 450V 7A 12SIP
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
- Power - Max: 4W (Ta), 35W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Package / Case: 12-SIP
- Supplier Device Package: 12-SIP
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- | 450V | 7A (Ta) | 1.1Ohm @ 3.5A, 10V | 4V @ 1mA | - | 720pF @ 10V | 4W (Ta), 35W (Tc) | 150°C | Through Hole | 12-SIP | 12-SIP |
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Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 40V 6A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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- | 40V | 6A (Ta) | 31mOhm @ 6A, 10V | 3V @ 250µA | 8.3nC @ 10V | 404pF @ 20V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Fairchild Semiconductor |
MOSFET 2N-CH 30V 5.8A 8SOIC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Rds On (Max) @ Id, Vgs: 37mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: - |
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- | 30V | 5.8A (Ta) | 37mOhm @ 5.8A, 10V | 1V @ 250µA | 25nC @ 10V | 460pF @ 15V | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |